Datasheet

Product Standards
Transistors with Built-in Resistor
DRA5115G0L
 Absolute Maximum Ratings Ta = 25 C
 Electrical Characteristics Ta = 25 C  3 C
Note
)
1.
Page
100 +30%
k

-
-0.25 V
Between emitter base resistance R2
-30%
-0.4 V
-0.9 V
Input voltage
Vi(on)
VCE = -0.2 V, IC = -5 mA
Vi(off)
VCE = -5 V, IC = -100 μA
Collector-emitter saturation voltage VCE(sat)
IC = -10 mA, IB = -0.5 mA
Forward current transfer ratio hFE
VCE = -10 V, IC = -5 mA 80
-0.5
μA
Emitter-base cutoff current (Collector open
)
IEBO
VEB = -6 V, IC = 0 -0.1
mA
Collector-emitter cutoff current (Base open
)
ICEO
VCE = -50 V, IB = 0
V
Collector-base cutoff current (Emitter open
)
ICBO
VCB = -50 V, IE = 0 -0.1
μA
Collector-emitter voltage (Base open) VCEO
IC = -2 mA, IB = 0 -50
Max Unit
Collector-base voltage (Emitter open) VCBO
IC = -10 μA, IE = 0 -50 V
Symbol Conditions
Storage temperature Tstg -55 to
Junction temperature Tj 150 °C
Total power dissipation PT 150 mW
Collector current IC -100 mA
Collector-emitter voltage (Base open) VCEO -50 V
Collector-base voltage (Emitter open) VCBO -50 V
Internal Connection
Resistance
value
R2
100
k
1of3
Unit: mm
Min Typ
SC-85
Collector


Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Low collector-emitter saturation voltage Vce(sat)
DRA5115G0L
Silicon PNP epitaxial planar type
For digital circuits
Complementary to DRC5115G
DRA2115G in SMini3 type package
 Features
 Marking Symbol:
LX
Code
Base
Emitter
―
Panasonic
 Packaging
SMini3-F2-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
+150 °C
Parameter
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
C
B
R
2
E
Doc No.
TT4-EA-11572
Revision.
2
Established
:
2009-10-14
Revised
:
2014-02-20