Datasheet

Product Standards
Transistors with Built-in Resistor
DRA5115G0L
Technical Data ( reference )
Page 2 of 3
IC - VCE
-0
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0 -2 -4 -6 -8 -10 -12
Collector-emitter voltage VCE (V)
Collector current IC (A)
IB = -800 μA
Ta = 25 ℃
-200μA
-300μA
-400μA
-500μA
-600μA
-100μA
hFE - IC
0
50
100
150
200
250
300
350
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Forward current transfer ratio hFE
Ta = 85 ℃
25 ℃
-40 ℃
VCE = -10 V
VCE(sat) - IC
-0.01
-0.1
-1
-10
-0.0001 -0.001 -0.01 -0.1
Collector current IC (A)
Collector-emitter saturation voltage
VCE(sat) (V)
IC/IB = 20
Ta = 85 ℃
25 ℃
-40 ℃
Io - VIN
-1.0E-06
-1.0E-05
-1.0E-04
-1.0E-03
-1.0E-02
-0 -0.5 -1 -1.5
Input voltage VIN (V)
Output current Io (A)
25 ℃
Vo = -5 V
Ta = 85 ℃
-40 ℃
VIN - Io
-0.1
-1
-10
-100
-0.0001 -0.001 -0.01 -0.1
Output current Io (A)
Input voltage VIN (V)
Vo = -0.2 V
85 ℃
25 ℃
Ta = -40 ℃
PT - Ta
0
50
100
150
200
0 20 40 60 80 100 120 140 160 180 200
Ambient temperature Ta (℃)
Total power dissipation PT (mW)
-700μA
Doc No.
TT4-EA-11572
Revision.
2
Established
:
2009-10-14
Revised
:
2014-02-20