Datasheet
Product Standards
Transistors with Built-in Resistor
DRC5144T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
)
1.
Page
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
Base
Emitter
Collector
R1
47
k
+150 °C
Junction temperature
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
NP
3 000 pcs / reel (standard)
Tj 150 °C
47
VCE(sat)
IC = 10 mA, IB = 0.5 mA
+30%
k
Input resistance R1
-30%
V
0.4 V
0.25 V
Input voltage
Vi(on)
VCE = 0.2 V, IC = 5 mA
Vi(off)
VCE = 5 V, IC = 100 μA
2.8
Collector-emitter saturation voltage
0.01 mA
Forward current transfer ratio hFE
VCE = 10 V, IC = 5 mA 160 460 -
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
ICBO
VCB = 50 V, IE = 0 0.1 μA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
V
Parameter
Collector-emitter voltage (Base open) VCEO
IC = 2 mA, IB = 0 50 V
Collector-base voltage (Emitter open) VCBO
IC = 10 μA, IE = 0 50
Symbol Conditions
Storage temperature Tstg -55 to
Total power dissipation PT 150 mW
Collector current IC 100 mA
Collector-emitter voltage (Base open) VCEO 50 V
Collector-base voltage (Emitter open) VCBO 50 V
Internal Connection
Resistance
value
1of3
Min Typ Max Unit
Unit: mm
SC-85
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
Marking Symbol:
DRC5144T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA5144T
DRC2144T in SMini3 type package
Features
Code ―
Panasonic
Packaging
SMini3-F2-B
JEITA
1.
2.
3.
Embossed type (Thermo-compression sealing) :
Parameter Symbol Rating Unit
+85 °COperating ambient temperature Topr -40 to
C
B
R
1
E
2.1
2.0
0.9
1.25
1.3
(0.65)
0.130.3
12
3
(0.65)
Doc No.
TT4-EA-11611
Revision.
2
Established
:
2009-10-15
Revised
:
2014-03-14