Datasheet

Product Standards
Zener Diode
DZ2J0560L
 Absolute Maximum Ratings Ta = 25 C
*1
Mounted on glass epoxy print board ( 45 mm  45 mm  1 mm )
Solder in ( Recommended land pattern )
*2 Test method : IEC61000_4_2
( C = 150 pF, R = 330 , Contact discharge : 10 times )
 Electrical Characteristics Ta = 25 C  3 C
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
Absolute frequency of input and output is 5 MHz.
The temperature must be controlled 25 C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25 C).
VZ guaranted 20 ms after current flow
Rank classification
Tj = 25 C to 150 C
Page
*3
3. *1
*2
Note)
Note) 1.
2.
Temperature coefficient of zener voltage
*3
200

Zener rise operating resistance RZK IZ = 0.5 mA
Internal Connection
1.6
mV/C
V
40

5.32
Max
5.88
1.0 V
Parameter Symbol Conditions
Forward voltage VF IF = 10 mA
Unit
1of4
Unit: mm
Min Typ
SMini2-F5-B
JEITA SC-90A
2. Anode



Low zener operating resistance Rz
Excellent rising characteristics of zener current Iz
Halogen-free / RoHS compliant
DZ2J0560L
Silicon epitaxial planar type
For constant voltage / For surge absorption circuit
 Features
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol:
DJ or DU
Code
1. Cathode
―
Panasonic
Parameter Symbol Rating Unit
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
SZ IZ = 5 mA
Zener voltage
*1, *2
VZ IZ = 5 mA
Zener operating resistance RZ IZ = 5 mA
Reverse current
C
Repetitive peak forward current IFRM 200 mA
Storage temperature Tstg -55 to
kV
+150
+85

15
Total power dissipation
*1
PT 200
Junction temperature Tj 150
Electrostatic discharge
*2
mW
Operating ambient temperature Topr -40 to
C
C
ESD
0.5

A
IR VR = 2.5 V
5.885.76
Marking symbol
DU DJ
VZ 5.48 to 5.32 to
Code M 0
Rank M No-rank
2.5
1.25
0.7
1.7
0.13
0.35
0.5
2
1
1
2
Doc No.
TT4-EA-11546
Revision.
4
Established
:
2009-10-14
Revised
:
2013-07-01