Datasheet

ZKE00090BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: November 2009
1
DZ2J180
Silicon epitaxial planar type
For constant voltage / waveform clipper and surge absorption circuit
Low noise type
Features
Excellent rising characteristics of zener current I
z
Eco-friendly Halogen-free package
Packaging
Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Repetitive peak forward current I
FRM
200 mA
Total power dissipation
*
P
T
200 mW
Junction temperature T
j
150
°C
Storage temperature T
stg
–55 to +150
°C
Note)
*
: P
T
= 200 mW achieved with a printed circuit board.
Common Electrical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
F
I
F
= 10 mA 1.0 V
Zener voltage
*
1, 2, 4
V
Z
I
Z
= 5 mA 17.10 18.90 V
Zener operating resistance R
Z
I
Z
= 5 mA 60
W
Zener rise operating resistance R
ZK
I
Z
= 0.5 mA 80
W
Reverse current I
R
V
R
= 13 V 0.05
mA
Temperature coefcient of zener voltage
*
3
S
Z
I
Z
= 5 mA 17.2 mV/°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25°C for V
Z
measurement. V
Z
value measured at other temperature must be adjusted to V
Z
(25°C)
*
2
: V
Z
guaranteed 20 ms after current ow.
*
3 : T
j
= 25°C to 150°C
*
4 : Rank classication
Code M 0
Rank M No-rank
V
Z
17.55 to 18.45 17.10 to 18.90
Marking Symbol YU YJ
Package
Code
SMini2-F5-B
Pin Name
1. Cathode
2. Anode
Marking Symbol: YJ, YU

Summary of content (4 pages)