Datasheet

Product Standards
Zener Diode
DZ2S1100L
 Absolute Maximum Ratings Ta = 25 C
*1
Mounted on glass epoxy print board ( 45 mm  45 mm  1 mm )
Solder in ( 0.8 mm  0.6 mm )
*2 Test method : IEC61000_4_2
( C = 150 pF, R = 330 , Contact discharge : 10 times )
 Electrical Characteristics Ta = 25 C  3 C
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
Absolute frequency of input and output is 5 MHz.
The temperature must be controlled 25 C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25 C).
VZ guaranted 20 ms after current flow
Rank classification
Tj = 25 C to 150 C
Page
60

Zener rise operating resistance RZK IZ = 0.5 mA
10.45
to
11.55
PU PJ
VZ
10.73
to
11.28
Internal Connection
8.3
mV/C
V
30

10.45
Max
11.55
1.0 V
Parameter Symbol Conditions
Forward voltage VF IF = 10 mA
Unit
Junction temperature Tj 150
C
1of4
Unit: mm
Min Typ
SSMini2-F5-B
JEITA SC-79
2. Anode



Low zener operating resistance Rz
Excellent rising characteristics of zener current Iz
Halogen-free / RoHS compliant
DZ2S1100L
Silicon epitaxial planar type
For constant voltage / For surge absorption circuit
DZ2J110 in SSMini2 type package
 Features
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol:
PJ or PU
Code
1. Cathode
SOD-523
Panasonic
Parameter Symbol Rating Unit
 Packaging
Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard)
SZ IZ = 5 mA
Zener voltage
*1, *2
VZ IZ = 5 mA
Zener operating resistance RZ IZ = 5 mA
Reverse current
Repetitive peak forward current IFRM 200 mA
Electrostatic discharge
*2
ESD
+150
C
Storage temperature Tstg -55 to

8
kV
Total power dissipation
*1
PT 150 mW
0.05

A
IR VR = 8 V
Marking symbol
Code M 0
Rank M No-rank
+85
C
Operating ambient temperature Topr -40 to
*3
Note) 1.
2.
3.
Note)
*1
*2
Temperature coefficient of zener voltage
*3
1.6
0.8
0.6
1.2
0.13
1
2
0.3
1
2
Doc No.
TT4-EA-11796
Revision.
3
Established
:
2009-11-10
Revised
:
2013-07-23