Datasheet

ManualsBrandsPANASONIC ManualsDiodesDual Zener diode Enclosure type (semiconductors) SOT 723 Zener voltage 6.2 V Max. power (P total) 1

Product Standards

Zener Diode

DZ37062D0L

 Absolute Maximum Ratings Ta = 25 C

*1:

Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)

(2 Diode total)

Solder in ( Recommended land pattern)

*2:

 Electrical Characteristics Ta = 25 C  3 C

2. *1: The temperature must be controlled 25°C for VZ mesurement.

VZ value measured at other temperature must be adjusted to VZ (25°C)

*2: VZ guaranted 20 ms after current flow.

*3: Tj = 25°C to 150°C

Page

Cathode2

Internal Connection

2.3 mV/°C



5.89

Max

6.51

1.0 V

UnitParameter Symbol Conditions

Forward voltage VF IF = 10 mA

±10 kV

Junction temperature Tj 150 °C

ESD

1of4

Unit: mm

Min Typ

SSSMini3-F2-B

JEITA SC-105AA

3. Anode1,2



Low zener operating resistance Rz

Excellent rising characteristics of zener current Iz

Halogen-free / RoHS compliant

DZ37062D0L

Silicon epitaxial planar type

For surge absorption circuit

 Features

(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)

 Marking Symbol:

Code

1. Cathode1

SOT-723

Panasonic

Parameter Symbol Rating Unit

 Packaging

Embossed type (Thermo-compression sealing) 10 000 pcs / reel (standard)

Temperature coefficient of zener voltage

SZ IZ = 5 mA

Zener voltage

*1, *2

VZ IZ = 5 mA

Zener operating resistance RZ IZ = 5 mA

Reverse current

Storage temperature Tstg -55 to +150 °C

150

Zener rise operating resistance RZK IZ = 0.5 mA

Total power dissipation

PT mW

Electrostatic discharge

100



+85 °COperating ambient temperature Topr -40 to

Note)

Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)

Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.

0.2 μAIR VR = 4 V

1.2

0.52

0.8

0.2

0.8

0.3

(0.4)

0.13

(0.4)

Doc No.

TT4-EA-12586

Revision.

Established

2010-05-17

Revised

2013-10-21

Summary of content (5 pages)

PAGE 1
Doc No. TT4-EA-12586 Revision. 3 Product Standards Zener Diode DZ37062D0L DZ37062D0L Silicon epitaxial planar type Unit: mm For surge absorption circuit 1.2 0.3 0.13 3  Features 0.8 1.2  Excellent rising characteristics of zener current Iz  Low zener operating resistance Rz  Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) 1 2 0.2  Marking Symbol: 01 (0.4) (0.4) 0.8  Packaging 1. Cathode1 2. Cathode2 3.
PAGE 2
Doc No. TT4-EA-12586 Revision. 3 Product Standards Zener Diode DZ37062D0L Technical Data ( reference ) PT - Ta IF - VF 1.E+00 Mounted on glass epoxy print board (2 diode total) Board size : 45 mm × 45 mm x 1 mm Solder in : land pattern 150 Forward current IF (A) Total power dissipation PT (mW) 200 100 50 20 40 60 1.E-02 1.E-03 1.E-04 1.E-05 1.E-06 0.0 0 0 Ta = 25 ℃ 1.E-01 80 100 120 140 160 180 200 0.2 0.4 0.6 0.8 1.0 1.
PAGE 3
Doc No. TT4-EA-12586 Revision. 3 Product Standards Zener Diode DZ37062D0L Technical Data ( reference ) Rth - t Ct - VR 1000 Ta = 25 ℃ f = 1 MHz 35 30 (1) Thermal resistance Rth (°C/W) Terminal capacitance Ct (pF) 40 25 20 15 10 5 0 0 1 2 3 Reverse voltage VR (V) 4 5 Rth(j-l) = 80 ℃/W (2) 100 10 1 0.001 (1) Non-heat sink (2) Mounted on glass epoxy print board. Board size : 45 mm × 45 mm x 1 mm Solder in : land pattern 0.01 0.
PAGE 4
Doc No. TT4-EA-12586 Revision. 3 Product Standards Zener Diode DZ37062D0L SSSMini3-F2-B Unit: mm 1.20±0.05 +0.05 0.13-0.02 +0.05 0.30-0.02 2 0.20±0.05 +0.05 0.20-0.02 (0.4) (5°) 1 1.20±0.05 0.80±0.05 3 (0.4) 0.80±0.05 0 to 0.05 0.52±0.03 (0.27) (5°)  Land Pattern (Reference) (Unit: mm) 1.15 0.35 0.45 0.35 0.35 0.35 0.4 0.
PAGE 5
Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed.