Datasheet

Product Standards
Zener Diode
DZ3S100D0L
 Absolute Maximum Ratings Ta = 25 C
*1:
Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
(2 Diode total)
Solder in ( 0.6 mm x 0.6 mm)
*2:
 Electrical Characteristics Ta = 25 C  3 C
1.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page
+85 °COperating ambient temperature Topr -40 to
0.05 μAIR VR = 7 V
60

+150 °C
150
Zener rise operating resistance RZK IZ = 0.5 mA
Total power dissipation
*1
PT mW
Electrostatic discharge
*2
Storage temperature Tstg -55 to
Temperature coefficient of zener voltage
*3
SZ IZ = 5 mA
Zener voltage
*1, *2
VZ IZ = 5 mA
Zener operating resistance RZ IZ = 5 mA
Reverse current
 Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
Parameter Symbol Rating Unit
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol:
04
Code
1. Cathode1
2. Cathode2
SOT-490
Panasonic
DZ3S100D0L
Silicon epitaxial planar type
For surge absorption circuit
 Features



Low zener operating resistance Rz
Excellent rising characteristics of zener current Iz
Halogen-free / RoHS compliant
SSMini3-F3-B
JEITA SC-89
3. Anode1,2
1of4
Unit: mm
Min Typ
±10 kV
Junction temperature Tj 150 °C
ESD
V
Parameter Symbol Conditions
Forward voltage VF IF = 10 mA
Unit
Internal Connection
6.5 mV/°C
V
30

9.50
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)
Note)
Note)
Max
10.50
1.0
12
3
1.6
1.6
0.7
0.85
0.130.26
(0.5)
1.0
12
3
(0.5)
Doc No.
TT4-EA-12583
Revision.
3
Established
:
2010-05-17
Revised
:
2013-10-22