Datasheet

Product Standards
Zener Diode
DZ4J330K0R
 Absolute Maximum Ratings Ta = 25 C
*1:
Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
Solder in ( 0.8 mm x 0.8 mm)
*2:
 Electrical Characteristics Ta = 25 C  3 C
1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25 °C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25 °C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25 °C to 150 °C
Page
0.05 μAIR VR = 25 V
 Basic Part Number :
Dual DZ2J330 (Parallel)
mW
Operating ambient temperature
Total power dissipation
*1
PT 200
Topr -40 to
mA
°C
°C+150
+85
to
Repetitive peak forward current IFRM 200
Reverse current
Storage temperature Tstg -55
VZ IZ = 2 mA
Zener operating resistance RZ IZ = 2 mA
 Packaging
Embossed type (Thermo-compression sealing) 3 000 pcs / reel (standard)
Parameter Symbol Rating Unit
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
 Marking Symbol
:
HG
Code
1. Anode-1
―
Panasonic
DZ4J330K0R
Silicon epitaxial planar type
For constant voltage / For surge absorption circuit
 Features



Low zener operating resistance Rz
Excellent rising characteristics of zener current Iz
Halogen-free / RoHS compliant
SMini4-F3-B
JEITA SC-113BB
4. Cathode-12. Anode-2
3. Cathode-2
1of4
Unit: mm
Min Typ
kV
Junction temperature Tj 150 °C
Electrostatic discharge
*2
ESD ±8
V
Parameter Symbol Conditions
Forward voltage VF IF = 10 mA
UnitMax
34.65
1.0
Internal Connection
32.0 mV/°C
V
200

31.35
200

Zener rise operating resistance RZK IZ = 0.5 mA
Note)
Test method:IEC61000_4_2(C = 150 pF,R = 330 , Contact discharge:10 times)
Note)
Temperature coefficient of zener voltage
*3
SZ IZ = 2 mA
Zener voltage
*1, *2
2.1
2.0
0.7
1.25
0.13
(0.65)
1.3
21
34
0.3
(0.65)
1 2
34
Doc No.
TT4-EA-12040
Revision.
3
Established
:
2009-12-21
Revised
:
2013-10-07