Datasheet

Design and specifi cations are each subject to change without notice. Ask factory for the current technical specifi cations before purchase and/or use.
Should a safety concern arise regarding this product, please be sure to contact us immediately.
Multilayer Ceramic Capacitors(High-Q Capacitors)
– EC41 –
10
Sample
0.5R
0.3 Size : 0201
0.5 Size : 0402
PC board
20
45±245±2
Bending Value
Unit : mm
R340
■ Specifi cations and Testing Methods
Characteristics Specifi cations Test Method
Operating
Temperature
Range
–55 to 125 °C
———
Dielectric
Withstanding
Voltage
No dielectric breakdown and/or damage Test voltage: Rated voltage
҂
300 %
Duration: 1 to 5 s
Charge/discharge current: 50 mA max.
Insulation
Resistance (IR)
10000 M
액
min. Measuring voltage: Rated voltage
Duration: 60±5 s
Charge / Discharge current: 50 mA max.
Capacitance Within the specifi ed tolerance Temperature: 20 +/–2 °C
Measuring Frequency: 1 MHz +/–10 %
Measuring Voltage: 0.5 to 5 Vrms
Dissipation
Factor
(tan
δ
)
tan
δ
<
0.005 max.
Temperature
Characteristics
C0G : 0 +/-30 ppm/°C Maximum capacitance change at stage 1 to 5
Stage
Temperature
Stage1
25±2 °C
Stage2
–25±2 °C
Stage3
(Reference Temperature)
25±2 °C
Stage4
85±2 °C
Stage5
25±2 °C
Adhesion The terminal electrode shall be free from peeling or
signs of peeling.
Applied force :
Size : 0201 : 2N
Size : 0402 : 5N
Arrow direction for 10 seconds.
Bending Strength Appearance : no mechanical damage Bending value : 1 mm
Bending speed : 1 mm/s
Resistance to
Solder Heat
Appearance : no mechanical damage
I.R. : initial value
Solder temperature : 270±5 °C
Dipping period : 3.0±0.5 s
Preheat condition :
Order Temp. (°C) Time (s)
180 to 100120 to 180
2150 to 200120 to 180
Recovery (Standard condition)
: 24 ±2 h
Solderability More than 75 % of the soldered area of both terminal
electrodes shall be covered with fresh solder .
Solder bath method
Solder temperature : 230±5 °C
Dipping period : 4±1 s
Solder : H63A (JIS Z 3283)
✽
Standard condition: Temperature 15 to 35 °C, Relative humidity 45 to 75 %.
00 Sep. 2008