Datasheet

Ver. CEKPublication date: June 2014
1
LNJ03004BDD1
Surface Mounting Chip LED
3230 Type
Absolute Maximum Ratings T
a
= 25°C
Parameter Symbol Rating Unit
Power dissipation P
D
430 mW
Forward current
*
1
I
F
120 mA
Pulse forward current
*
2
I
FP
200 mA
Junction temperature T
j
110
°C
Operating ambient temperature T
opr
–30 to +85
°C
Storage temperature T
stg
–40 to +100
°C
Note)
*
1: I
F
is different by radiated factor of evaluation board.
This value is mounted on evaluation board at Rthj-a = 25.0 °C/W.
*
2: The condition of pulse current I
FP
is 55 ms pulse width, 10 % duty.
Electro-Optical Characteristics T
a
= 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage
*
1
V
F
I
FP
= 60 mA 2.7 2.95 3.2 V
Luminous flux
*
2
F I
FP
= 60 mA 22.0 26.5 30.0 lm
Chromaticity coordinates
*
3
x I
FP
= 60 mA 0.313
y I
FP
= 60 mA 0.330
Color Rendering Index Ra I
FP
= 60 mA 82
Note)
*
1: Complete Forward Voltage measurement within 0.1 seconds. Tolerance ±3%
*
2: Complete Luminous flux measurement within 0.1 seconds. Tolerance ±10%
*
3: Complete Chromaticity coordinates measurement within 0.1 seconds. Tolerance of chromaticity is ±0.01
0
0
40
120
80
20 40 60 10080
02.6 2.8 3.23.0 3.4 40 20 20 40
60
80 100
0
20
40
60
80
100
0
50
150
100
120
0
0.2
0.4
0.6
0.8
1.2
1.0
500350 650 800
050 100 150
0
10
20
60
40
50
30
0306090 0.2
40
60
80
20
0.4 0.6 0.8 1.0
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
0.2
0.4
0.6
0.8
1.0
X
Y
Y
X
F I
FP
I
FP
V
F
I
F
T
a
Ambient temperature T
a
(°C)
Ambient temperature T
a
(°C)
Forward current I
F
(mA)
Forward voltage V
F
(V)Pulse forward current I
FP
(mA)
Luminous Flux F (lm)
Relative Luminous Flux (%)
Pulse forward current I
FP
(mA)
Relative Spectral Power (a.u.)
Relative luminous intensity (a.u.)
Relative Luminous Flux T
a
Relative Spectral Power Wavelength
Wavelength (nm)
Directive characteristics
Relative luminous intensity (a.u.)Radiation Angle (deg)
Lighting Color
White (6
500 [Kelvin])

Summary of content (3 pages)