Datasheet

PAGE . 1
May 29,2014-REV.04
TB4S-12 SERIES
MICRO SURFACE MOUNT GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER
VOLTAGE 400~1000 Volt 1.2 Amper
FEATURES
• Glass Passivated Chip Junciton
• Ideally Suited for Automatic Assembly
• Save Space On Printed Circuit Boards
• Ultra Thin Profile Package for Space Constrained Utilization
• Low Forward Voltage Drop
• Plastic Material : UL Flammability Classification Rating 94V-0
• Lead free in compliance with EU RoHS 2011/65/EU directive
• Green molding compound as per IEC61249 Std. . (Halogen Free)
MECHANICAL DATA
• Case : TDI, Plastic
• Terminals : Solderable per MIL-STD-750, Method 2026
• Polarity : As Marked on case
• Weight : 0.003 ounces, 0.089 grams (Approx.)
• Marking : Part number
CURRENT
ABSOLUTE MAXIMUM RATINGS (If not specified TA=25
o
C)
ELECTRICAL CHARACTERISTICS (If not specified TA=25
o
C)
NOTE :
1. Mounted on a FR4 PCB, single-sided copper, with 100cm
2
copper pad area.
2. Mounted on a FR4 PCB, single-sided copper, mini pad.
PARAMETER SYMBOL CONDITIONS MAX. UNIT
Forward Voltage V
F
I F =1.2A,Pulse measurement, Rating of per diode 1.1 V
Reverse Current I
R
At V RRM ,Pulse measurement, Rating of per diode 15 μA
Typi cal thermal
Resistance Per Diode
R
θ JC
Junction to case (Note 1) 25(typ.)
O
C/W
R
θJA
Junction to ambient (Note 2) 160(typ.)
PARAMETER SYMBOL TB4S-12 TB6S-12 TB8S-12 TB10S-12 UNIT
Maximum Recurrent Peak Reverse Voltage V
RRM 400 600 800 1000 V
Maximum RMS Voltage V
RMS 280 420 560 700 V
Maximum DC Blocking Voltage V
DC 400 600 800 1000 V
Maximum Average Rectified Forward Current I
F(AV )1.2A
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load
per diode I
FSM 50 A
I
2
t Rating for fusing (t<8.3ms) I
2
t 10.375 A
2
sec
Operating Junction Temperature Range T
J 150
o
C
Storage Temperature Range T
STG -55 to +150
o
C