Datasheet

PAGE . 2
August 27,2014-REV.06
TB1S~TB10S
ELECTRICAL CHARACTERISTICS (If not specified TA=25
o
C)
PARAMETER SYMBOL CONDITIONS MAX. UNIT
Forward Voltage V
F
I F =1A,Pulse measurement, Rating of per diode 1 V
Reverse Current I
R
At V RRM ,Pulse measurement, Rating of per diode 10 μA
Typical Junction capacitance C
J
V R =4V,f=1MH Z 10 pF
Thermal Resistance
R
θJC
Junction to case (Note 1) 30
O
C/W
R
θJA
Junction to ambient (Note 1) 95
NOTE:
1. Mounted on 48cm
2
FR-4 PCB.
I
R
, Reverse Leakage
Current (µA)
0.00
0.20
0.40
0.60
0.80
1.00
1.20
0 25 50 75 100 125 150
T , AMBIENT TEMPERATURE ( C)
A
o
I , FORWARD CURRENT (A)
F