DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BGA2003 Silicon MMIC amplifier Product specification Supersedes data of 1999 Feb 25 1999 Jul 23
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 FEATURES PINNING • Low current PIN DESCRIPTION • Very high power gain 1 GND • Low noise figure 2 RF in • Integrated temperature compensated biasing 3 CTRL (bias current control) • Control pin for adjustment bias current 4 VS + RF out • Supply and RF output pin combined. APPLICATIONS handbook, halfpage • RF front end 3 CTRL 4 • Wideband applications, e.g.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS VS supply voltage RF input AC coupled VCTRL voltage on control pin IS supply current (DC) ICTRL control current Ptot total power dissipation Tstg storage temperature Tj operating junction temperature forced by DC voltage on RF input or ICTRL Ts ≤ 100 °C MIN. MAX. UNIT − 4.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS537 200 handbook, halfpage handbook, halfpage 100 pF Ptot (mW) R1 VS 150 L1 C RF out RCTRL VCTRL 3 100 4 BGA2003 50 2 1 C 0 0 RF in 50 100 150 MGS536 Fig.2 Typical application circuit. Ts (°C) 200 Fig.3 Power derating. MGS538 2.5 MGS539 30 handbook, halfpage handbook, halfpage I CTRL (mA) I VS-OUT (mA) 2 20 1.5 1 10 0.5 0 0 0 0.5 1 1.5 2 VCTRL (V) 0 ICTRL = (VCTRL − 0.83)/296.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS540 30 I VS-OUT (mA) 25 handbook, halfpage MGS541 20 handbook, halfpage (6) I VS-OUT (mA) (5) 15 20 (4) 15 10 (3) 10 5 5 (2) (1) 0 −40 VS-OUT = 2.5 V. (1) ICTRL = 0.2 mA. (2) ICTRL = 0.4 mA. (3) ICTRL = 1.0 mA. Fig.6 0 0 40 80 120 Tamb (°C) 0 (4) ICTRL = 1.5 mA. (5) ICTRL = 2.0 mA. (6) ICTRL = 2.5 mA. 2 3 4 VVS-OUT (V) 5 ICTRL = 1 mA.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 MGS544 25 gain (dB) MGS545 40 handbook, halfpage handbook, halfpage gain (dB) MSG 20 30 Gmax 15 20 G UM GUM Gmax 10 10 5 0 102 0 0 5 10 15 20 25 IVS-OUT (mA) 103 f (MHz) 104 VVS-OUT = 2.5 V; f = 1800 MHz. VVS-OUT = 2.5 V; IVS-OUT = 10 mA. Fig.10 Gain as a function of the bias current (IVS-OUT); typical values. Fig.11 Gain as a function of frequency; typical values. MGS546 3 min (dB) 2.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 handbook, full pagewidth 90° unstable region source 135° 1.0 +1 45° +2 +0.5 unstable region load 0.6 (1) (2) +0.2 180° 0 0.5 0.4 +5 (3) Γopt 0.2 1 0.8 0.2 2 5 0° 0 (4) −0.2 f = 900 MHz; VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. (1) G = 23 dB. (2) G = 22 dB. (3) G =21 dB. (4) NF = 1.8 dB. (5) NF = 2 dB. (6) NF = 2.2 dB. −5 (5) (6) −135° −0.5 −2 − 45° −1 1.0 − 90° MGS547 Fig.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90° handbook, full pagewidth 1.0 +1 135° 45° +2 +0.5 0.8 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 2 2 GHz 5 1 GHz 3 GHz 0 200 MHz −5 500 MHz −0.2 −0.5 −135° 0° 100 MHz −2 − 45° −1 1.0 − 90° MGS549 VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. Fig.15 Common emitter input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 135° 45° 500 MHz 900 MHz 1 GHz 200 MHz 1.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 90° handbook, full pagewidth 135° 45° 3 GHz 180° 0.5 0.4 0.3 0.2 0.1 0° 100 MHz −135° − 45° − 90° MGS551 VVS-OUT = 2.5 V; IVS-OUT = 10 mA; Zo = 50 Ω. Fig.17 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 45° +2 +0.5 0.8 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 2 5 100 MHz 900 MHz 1 GHz −0.2 −135° 3 GHz −0.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.
Philips Semiconductors Product specification Silicon MMIC amplifier BGA2003 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd.