DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 BGA2712 MMIC wideband amplifier Product specification Supersedes data of 2002 Jan 31 2002 Sep 10
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 PINNING FEATURES • Internally matched to 50 Ω PIN • Wide frequency range (3.2 GHz at 3 dB bandwidth) DESCRIPTION 1 • Flat 21 dB gain (DC to 2.6 GHz at 1 dB flatness) VS 2, 5 GND2 • 5 dBm saturated output power at 1 GHz 3 RF out • Good linearity (11 dBm IP3(out) at 1 GHz) 4 GND1 6 RF in • Unconditionally stable (K > 1.5).
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to solder point CONDITIONS VALUE UNIT 300 K/W MAX. UNIT Ptot = 200 mW; Ts ≤ 90 °C CHARACTERISTICS VS = 5 V; IS = 12.3 mA; Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER IS supply current s212 insertion power gain RL IN return losses input RL OUT return losses output s122 isolation CONDITIONS MIN. TYP. 9 12.
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA2712 MMIC. The device is internally matched to 50 Ω, and therefore does not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased.
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.5 100 MHz 0.2 0 2 5 0° 0 4 GHz −5 −0.2 −0.5 −2 −135° −45° −1 MLD904 1.0 −90° IS = 12.3 mA; VS = 5 V; PD = −30 dBm; ZO = 50 Ω. Fig.7 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 +0.5 0.6 +0.2 0.4 +5 0.2 180° 0.2 0 0.
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 MLD906 0 MLD907 25 handbook, halfpage s 2 handbook, halfpage 12 (dB) −10 s21 2 (dB) 20 −20 (1) (2) −30 15 (3) −40 −50 10 0 1000 2000 3000 4000 0 1000 2000 3000 f (MHz) Isolation (s122) as a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of frequency; typical values.
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 MLD902 6 MLD903 10 handbook, halfpage handbook, halfpage NF K (dB) 8 5 6 (1) 4 (3) (2) 4 3 2 0 2 0 1000 2000 f (MHz) 0 3000 ZO = 50 Ω. (1) IS = 15.1 mA; VS = 5.5 V. (2) IS = 12.3 mA; VS = 5 V. (3) IS = 10.1 mA; VS = 4.5 V. 2000 3000 4000 f (MHz) IS = 12.3 mA; VS = 5 V; ZO = 50 Ω. Fig.13 Noise figure as a function of frequency; typical values. 2002 Sep 10 1000 Fig.
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Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT363 D E B y X A HE 6 v M A 4 5 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification MMIC wideband amplifier BGA2712 NOTES 2002 Sep 10 11
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