DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BGA6589 MMIC wideband medium power amplifier Product specification 2003 Sep 19
Philips Semiconductors Product specification MMIC wideband medium power amplifier FEATURES BGA6589 PINNING • Broadband 50 Ω gain block PIN DESCRIPTION • 20 dBm output power 1 RF out/bias • SOT89 package 2 GND • Single supply voltage needed.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134) SYMBOL PARAMETER VS DC device voltage IS DC supply current CONDITIONS MIN. RF input AC coupled Ts ≤ 70 °C; note 1 MAX. UNIT − 6 V − 150 mA Ptot total power dissipation − 800 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C PD maximum drive power − 15 dBm Note 1.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 CHARACTERISTICS VS = 9 V; IS = 84 mA; Tamb = 25 °C; IP3(out) tone spacing = 1 MHz; PL = 0 dBm per tone (see Fig.2); Rbias = 51 Ω; ZL = ZS = 50 Ω; unless otherwise specified.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 APPLICATION INFORMATION Figure 2 shows a typical application circuit for the BGA6589 MMIC. The device is internally matched to 50 Ω, and therefore does not require any external matching. The value of the input and output DC blocking capacitors C1 and C2 depends on the operating frequency; see the tables below. Capacitors C1 and C2 are used in conjunction with L1 and C3 to fine tune the input and output impedance.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 90° handbook, full pagewidth 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 0.2 180° 0 0.2 0.5 1 2 5 10 0° 200 MHz 2.6 GHz 0 −5 −0.2 −2 −0.5 −135° −45° −1 1.0 −90° MGX409 IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω. Fig.3 Input reflection coefficient (s11); typical values. 90° handbook, full pagewidth 1.0 +1 135° +0.5 0.8 45° +2 0.6 +0.2 0.4 +5 2.6 GHz 0.2 180° 0 0.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 MGX411 0 MGX412 25 handbook, halfpage |s |2 handbook, halfpage |s |2 21 (dB) 12 (dB) 20 −10 15 −20 10 −30 5 −40 0 0 500 1000 1500 2000 2500 f (MHz) 0 IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω. 1500 2000 2500 f (MHz) Insertion gain (|s21|2) as a function of frequency; typical values. Fig.6 MGX413 25 1000 IS = 84 mA; VS = 9 V; PD = −30 dBm; ZO = 50 Ω.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 MGX415 5 MGX416 5 handbook, halfpage handbook, halfpage NF (dB) K 4 4 3 3 2 2 1 1 0 0 0 500 1000 1500 0 2000 2500 f (MHz) 500 1000 1500 2000 2500 f (MHz) IS = 84 mA; VS = 9 V; ZO = 50 Ω. IS = 84 mA; VS = 9 V; ZO = 50 Ω. Fig.9 Fig.10 Stability factor as a function of frequency; typical values. Noise figure as a function of frequency; typical values.
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Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A b3 E HE L 1 2 3 c b2 w M b1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A b1 b2 b3 c D E e e1 HE L min. w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.37 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 0.8 0.
Philips Semiconductors Product specification MMIC wideband medium power amplifier BGA6589 DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date.
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