DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD904L 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 1999 Aug 17 2001 Nov 01
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES BGD904L PINNING - SOT115J • Excellent linearity PIN DESCRIPTION • Extremely low noise 1 input • Excellent return loss properties 2 common • Silicon nitride passivation 3 common • Rugged construction 5 +VB • Gold metallization ensures excellent reliability 7 common • Low DC current consumption.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L CHARACTERISTICS Bandwidth 40 to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 19.7 20 20.3 dB f = 900 MHz 20.5 21 21.5 dB SL slope straight line f = 40 to 900 MHz 0.4 0.9 1.4 dB FL flatness straight line f = 40 to 900 MHz − ±0.15 ±0.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL CSO d2 Vo NF Itot PARAMETER composite second order distortion second order distortion output voltage noise figure BGD904L CONDITIONS MIN. TYP. MAX. 49 channels flat; Vo = 47 dBmV; fm = 860.5 MHz − −69 −63 dB 77 channels flat; Vo = 44 dBmV; fm = 548.5 MHz − −73 −68 dB 110 channels flat; Vo = 44 dBmV; fm = 746.5 MHz − −69 −63 dB 129 channels flat; Vo = 44 dBmV; fm = 860.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MGS452 −50 handbook, halfpage handbook, halfpage −60 (2) (3) (4) −60 44 −70 40 −80 36 800 −90 −70 Vo (2) (dBmV) (3) (4) 48 (1) (dB) 48 (4) 52 Xmod (2) (dBmV) (3) (1) MGS453 −50 52 Vo CTB (dB) BGD904L 44 (1) (1) −80 −90 200 0 400 600 40 200 0 400 f (MHz) 36 800 600 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MGS455 −50 handbook, halfpage CTB (dB) (2) (1) (3) BGD904L MGS456 −50 52 handbook, halfpage Xmod Vo (dBmV) 52 (2) (dB) (3) (1) Vo (dBmV) (4) 48 48 −60 −70 44 −70 44 −80 40 −80 40 36 1000 800 f (MHz) −90 −60 (4) −90 200 0 400 600 0 200 400 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB; (50 to 860 MHz). (1) Vo. (3) Typ. (2) Typ. +3 σ. (4) Typ. −3 σ.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MGS458 −20 BGD904L MGS459 −30 handbook, halfpage handbook, halfpage CTB (dB) CSO (dB) −30 −40 −40 −50 −50 −60 (1) (2) (1) (2) (3) −60 −70 40 −70 45 50 Vo (dBmV) −80 40 55 (3) 45 50 Vo (dBmV) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. Fig.8 Fig.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD904L DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 10 BGD904L
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 11 BGD904L
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