DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGD906; BGD906MI 860 MHz, 21.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier FEATURES BGD906; BGD906MI PINNING - SOT115J • Excellent linearity DESCRIPTION PIN • Extremely low noise BGD906 • Excellent return loss properties 1 • Silicon nitride passivation input 2, 3 • Rugged construction 5 • Gold metallization ensures excellent reliability.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI CHARACTERISTICS Bandwidth 40 to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 50 MHz 21.2 21.5 21.8 dB f = 900 MHz 22 22.5 23 dB dB SL slope straight line f = 40 to 900 MHz 0.5 1 1.5 FL flatness straight line f = 40 to 900 MHz − − ±0.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier SYMBOL CSO d2 Vo NF Itot PARAMETER composite second order distortion second order distortion output voltage noise figure total current consumption (DC) CONDITIONS BGD906; BGD906MI MIN. TYP. MAX. UNIT 49 chs flat; Vo = 47 dBmV; fm = 860.5 MHz − −63 −59 dB 77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz − −74 −65 dB 110 chs flat; Vo = 44 dBmV; fm = 746.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier MGS661 −50 handbook, halfpage handbook, halfpage (2) (3) (4) (3) (4) −70 Vo (1) (dB) 48 −60 (2) 44 −70 44 (1) 40 −80 36 800 −90 −80 200 0 400 (2) (dBmV) (3) (4) 48 (3) (4) (1) −90 52 Xmod (2) (1) −60 MGS662 −50 52 Vo (dBmV) CTB (dB) BGD906; BGD906MI 600 40 200 0 400 36 800 600 f (MHz) f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz); tilt = 3.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier MGS664 −50 handbook, halfpage CTB (dB) (1) (2) (3) (4) BGD906; BGD906MI MGS665 −50 52 handbook, halfpage Vo (dBmV) 52 Xmod (2) (dB) (3) Vo (dBmV) (4) 48 48 −60 −70 44 −70 44 −80 40 −80 40 36 1000 800 f (MHz) −90 −60 (1) −90 200 0 400 600 200 0 400 ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.5 dB (50 to 860 MHz). ZS = ZL = 75 Ω; VB = 24 V; 129 chs; tilt = 12.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier MGS667 −20 MGS668 −20 handbook, halfpage handbook, halfpage CTB (dB) CSO (dB) −30 −30 −40 −40 −50 −50 −60 BGD906; BGD906MI (1) (2) −60 (1) (2) (3) (3) −70 40 45 50 −70 40 55 Vo (dBmV) 45 50 55 Vo (dBmV) ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz. ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ. (1) Typ. +3 σ. (2) Typ. (3) Typ. −3 σ.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.
Philips Semiconductors Product specification 860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification 860 MHz, 21.
Philips Semiconductors Product specification 860 MHz, 21.
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