DISCRETE SEMICONDUCTORS DATA SHEET M3D454 BGY280 UHF amplifier module Preliminary specification 2000 Nov 15
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PINNING - SOT559A FEATURES • Dual band GSM amplifier PIN • 3.6 V nominal supply voltage DESCRIPTION 1,2,3,6,9,10,11,14 Ground • 33.5 dBm output power for GSM1800 4 RF output 2 (1800 MHz) • 35.5 dBm output power for GSM900 5 VS2 (1800 MHz) • Easy output power control by DC voltage. 7 VS1 (900 MHz) • Internal input and output matching.
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 CHARACTERISTICS ZS = ZL = 50 Ω; PD1,2 = 0 dBm; VS1 = VS2 = 3.6 V; VC1,2 ≤ 2.2 V; Tmb = 25 °C; tp = 575 µs; δ = 2 : 8; f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified. SYMBOL IL PARAMETER leakage current CONDITIONS load power GSM 900 TYP. MAX. UNIT − − 10 µA − − 2 mA VC1 = 2.2 V 34.5 35.5 − dBm VC1 = 2.2 V; VS1 = 3.2 V; Tmb = 25 °C 34 35 − dBm VC2 = 2.2 V 32.
Philips Semiconductors Preliminary specification UHF amplifier module SYMBOL BGY280 PARAMETER CONDITIONS TX / RX conversion PL1 PL1 PL2 PL2 MIN. TYP. MAX. UNIT = 34 dBm; f = 915 MHz (925 MHz) / PD (905 MHz) = 32 dBm; f = 1785 MHz (1765 MHz) / PD (1805 MHz) − 25 − dB control bandwidth PL1 = 6 to 34 dBm; PL2 = 4 to 32 dBm; 1 1.5 − MHz stability VS1,2 = 3.2 to 5 V; VC = 0 to 2.2 V; PD1,2 = 0 to 3 dBm; PL1 < 34.8 dBm; PL2 < 32.
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 -20 -20 H2 (dBc) H3 (dBc) -30 -30 1710MHz -40 -40 915MHz 915MHz 880MHz 880MHz -50 1785MHz 1710MHz -50 1785MHz -60 -60 20 25 30 35 PL (dBm) 40 20 25 30 ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; δ = 2 : 8; tp = 575 µs. T mb = 25 °C; δ = 2 : 8; tp = 575 µs. Fig.4 Fig.5 Second harmonic as a function of load power; typical values.
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 40 output AM (%) 8 AM-PM (deg/dB) 30 6 20 4 1800MHz 900MHz 2 10 1800MHz 900MHz 0 0 0 10 20 30 40 PL (dBm) -10 0 10 20 30 40 PL (dBm) ZS = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; Z S = Z L = 50 Ω; VS = 3.6 V; P D = 0 dBm; Tmb = 25 °C; ∆ f = 100 kHz; input amplitude modulation = 5.4%; δ = 2 : 8; tp = 575 µs. δ = 2 : 8; t p = 575 µs. Fig.8 Fig.
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 RF input RF output Z2 Z3 VS BGY280 GSM900 8 12 VC 7 13 15 VC 5 16 4 GSM1800 Z1 Z4 RF input RF output VS Fig.11 Test circuit List of components (See Fig 10 and 11) COMPONENT DESCRIPTION VALUE C1, C4 multilayer ceramic chip capacitor 100 µF; 40 V C2, C3 electrolytic capacitor 100 nF Z1, Z2, Z3, Z4 stripline; note 1 50 Ω R1, R2 metal film resistor 100 Ω; 0.6 W DIMENSIONS CATALOGUE NO. width 2.
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 Fig.
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 PACKAGE OUTLINE SOT559A Leadless surface mounted package; plastic cap; 16 terminations e1 L1 (4×) L (12×) e1 b (12×) 1 2 Z6 (12×) L3 (4×) Z4 (12×) Z (2×) 3 Z5 (4×) 4 L2 16 b4 (4×) (4×) 15 5 e2 e b2 (2×) SOT559A Z1 (2×) Z3 (2×) 6 14 Z7 (6×) e b7 (4×) e2 7 13 b8 (4×) Z8 (6×) 8 12 11 10 b3 (4×) 9 b6 (4×) b5 (4×) b1 (2×) Z2 (2×) D Dimensions solderresist D1 A c E1 E pin 1 index 0 5 10 mm
Philips Semiconductors Preliminary specification UHF amplifier module BGY280 DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
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