DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D252 BGD814 860 MHz, 20 dB gain power doubler amplifier Product specification Supersedes data of 2001 Sep 07 2001 Nov 01
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier FEATURES BGD814 PINNING - SOT115J • Excellent linearity PIN • Extremely low noise DESCRIPTION 1 • Excellent return loss properties input 2, 3 • Silicon nitride passivation common 5 • Rugged construction +VB 7, 8 • Gold metallization ensures excellent reliability. common 9 output APPLICATIONS • CATV systems operating in the 40 to 870 MHz frequency range.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 CHARACTERISTICS Bandwidth 40 to 870 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω. SYMBOL Gp PARAMETER power gain CONDITIONS MIN. TYP. MAX. UNIT f = 45 MHz 19.7 − 20.3 dB f = 870 MHz 20.5 − 21.5 dB dB SL slope straight line f = 45 to 870 MHz; note 1 0.5 − 1.5 FL flatness straight line f = 45 to 100 MHz − − ±0.25 dB f = 100 to 800 MHz − − ±0.5 dB f = 800 to 870 MHz −0.4 − 0.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier SYMBOL CSO PARAMETER composite second order distortion CONDITIONS BGD814 MIN. TYP. MAX. UNIT 79 chs flat; Vo = 44 dBmV; fm = 548.5 MHz − − −68 dB 112 chs flat; Vo = 44 dBmV; fm = 746.5 MHz − − −61 dB 132 chs flat; Vo = 44 dBmV; fm = 860.5 MHz − − −57 dB 112 chs; fm = 210 MHz; Vo = 50.2 dBmV at 745 MHz; note 2 − − −56 dB 79 chs; fm = 210 MHz; Vo = 47.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MLD345 −50 handbook, halfpage (1) CTB (dB) BGD814 MLD346 −40 52 handbook, halfpage (1) Xmod Vo (dBmV) 52 Vo (dBmV) (dB) −60 48 −50 48 −70 44 −60 44 (2) (3) (4) (2) −80 −90 40 −70 36 1000 800 f (MHz) −80 (3) (4) 200 0 400 600 200 0 400 600 40 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz). ZS = ZL = 75 Ω; VB = 24 V; 79 chs; tilt = 7.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier MLD348 −40 handbook, halfpage (1) CTB (dB) MLD349 −40 52 handbook, halfpage Vo (dBmV) (dB) −50 48 52 (1) Xmod Vo (dBmV) −50 BGD814 48 (2) −60 (2) (3) (4) −80 200 0 400 600 44 (4) 40 −70 36 1000 800 f (MHz) −80 −70 (3) −60 44 40 200 0 400 600 36 1000 800 f (MHz) ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz). ZS = ZL = 75 Ω; VB = 24 V; 112 chs; tilt = 10.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 PACKAGE OUTLINE Rectangular single-ended package; aluminium flange; 2 vertical mounting holes; 2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J D E Z p A2 1 2 3 5 7 8 9 A L F S W c e b w M e1 d U2 q2 Q B y M B q1 y M B y M B p U1 q 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A2 A max. max. mm 20.8 9.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier BGD814 DATA SHEET STATUS DATA SHEET STATUS(1) PRODUCT STATUS(2) DEFINITIONS Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Preliminary data Qualification This data sheet contains data from the preliminary specification.
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 9 BGD814
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 10 BGD814
Philips Semiconductors Product specification 860 MHz, 20 dB gain power doubler amplifier NOTES 2001 Nov 01 11 BGD814
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