Datasheet ADS1015
Table Of Contents
- 1 Features
- 2 Applications
- 3 Description
- Table of Contents
- 4 Revision History
- 5 Device Comparison Table
- 6 Pin Configuration and Functions
- 7 Specifications
- 8 Detailed Description
- 9 Application and Implementation
- 9.1 Application Information
- 9.2 Typical Application
- 9.2.1 Design Requirements
- 9.2.2 Detailed Design Procedure
- 9.2.2.1 Shunt Resistor Considerations
- 9.2.2.2 Operational Amplifier Considerations
- 9.2.2.3 ADC Input Common-Mode Considerations
- 9.2.2.4 Resistor (R1, R2, R3, R4) Considerations
- 9.2.2.5 Noise and Input Impedance Considerations
- 9.2.2.6 First-order RC Filter Considerations
- 9.2.2.7 Circuit Implementation
- 9.2.2.8 Results Summary
- 9.2.3 Application Curves
- 10 Power Supply Recommendations
- 11 Layout
- 12 Device and Documentation Support
- 13 Mechanical, Packaging, and Orderable Information
6
ADS1013
,
ADS1014
,
ADS1015
SBAS473E –MAY 2009–REVISED JANUARY 2018
www.ti.com
Product Folder Links: ADS1013 ADS1014 ADS1015
Submit Documentation Feedback Copyright © 2009–2018, Texas Instruments Incorporated
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended
Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
7 Specifications
7.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)
(1)
MIN MAX UNIT
Power-supply voltage VDD to GND –0.3 7 V
Analog input voltage AIN0, AIN1, AIN2, AIN3 GND – 0.3 VDD + 0.3 V
Digital input voltage SDA, SCL, ADDR, ALERT/RDY GND – 0.3 5.5 V
Input current, continuous Any pin except power supply pins –10 10 mA
Temperature
Operating ambient, T
A
–40 125
°CJunction, T
J
–40 150
Storage, T
stg
–60 150
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
7.2 ESD Ratings
VALUE UNIT
V
(ESD)
Electrostatic discharge
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001
(1)
±2000
V
Charged-device model (CDM), per JEDEC specification JESD22-C101
(2)
±500
(1) AINP and AINN denote the selected positive and negative inputs. AINx denotes one of the four available analog inputs.
(2) This parameter expresses the full-scale range of the ADC scaling. No more than VDD + 0.3 V must be applied to the analog inputs of
the device. See Table 1 more information.
7.3 Recommended Operating Conditions
MIN NOM MAX UNIT
POWER SUPPLY
Power supply (VDD to GND) 2 5.5 V
ANALOG INPUTS
(1)
FSR Full-scale input voltage range
(2)
(V
IN
= V
(AINP)
– V
(AINN)
) ±0.256 ±6.144 V
V
(AINx)
Absolute input voltage GND VDD V
DIGITAL INPUTS
V
DIG
Digital input voltage GND 5.5 V
TEMPERATURE
T
A
Operating ambient temperature –40 125 °C
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application
report.
7.4 Thermal Information
THERMAL METRIC
(1)
ADS101x
UNITDGS (VSSOP) RUG (X2QFN)
10 PINS 10 PINS
R
θJA
Junction-to-ambient thermal resistance 182.7 245.2 °C/W
R
θJC(top)
Junction-to-case (top) thermal resistance 67.2 69.3 °C/W
R
θJB
Junction-to-board thermal resistance 103.8 172.0 °C/W
ψ
JT
Junction-to-top characterization parameter 10.2 8.2 °C/W
ψ
JB
Junction-to-board characterization parameter 102.1 170.8 °C/W
R
θJC(bot)
Junction-to-case (bottom) thermal resistance N/A N/A °C/W