Datasheet
PSBS 162
POWERSEM GmbH, Walpersdorfer Str. 53 2009 POWERSEM reserves the right to change limits, test conditions and dimensions
91126 D- Schwabach
Phone: 09122 - 9764-0 Email: info@powersem.de Fax.: 09122 - 9764-20
T = 150°C
vj
T = 25°C
vj
2
0.5 1.5
1
V [V]
F
0
I
F
50
100
200
150
[A]
0.4
0.6
0.8
1
1.2
1.4
1.6
10
0
10
1
10
2
10
3
t[ms]
I (A)
FSM
TVJ=45°C TVJ=150°C
1800 1600
I
------
I
FSM
F(OV)
0 V
RRM
1/2 V
RRM
1 V
RRM
2 4 6 10
TVJ=45°C
TVJ=150°C
t [ms]
1
10
10
10
3
4
5
As
2
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current
per diode I
FSM
: Crest value.
t: duration
Fig. 3 ∫i
2
dt versus time
(1-10ms) per diode (or thyristor)
1257525
0
50
100
150
200
250
300
350
400
70
75
80
85
90
95
100
105
110
115
120
125
130
135
140
145
150
TC
°C
DC
sin.180°
rec.120°
rec.60°
rec.30°
1.3
0.56
0.31
0.18
0.12 0.05 = RTHCA [K/W]
IFAVM [A] Tamb [K]
0 50 100 150
[W]
PVTOT
PSB 162
Fig. 4 Power dissipation versus direct output current and ambient
temperature
50
1
0
0
1
5
0
2
0
0
0
50
100
1
5
0
D
C
s
i
n
.
1
8
0
°
r
e
c
.
1
2
0
°
r
e
c
.
6
0
°
r
e
c
.
3
0
°
T
(
°
C
)
C
I
dAV
[A]
Fig.5 Maximum forward current
at case temperature
0.01 0.1
1
1
0
0.2
0.4
0.6
0.8
1
K/W
Z
th
t
[
s
]
Z
t
h
J
K
Z
t
h
J
C
Fig. 6 Transient thermal impedance per diode (or thyristor),
calculated
PSBS 162