Specifications

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SLWS142J − JANUARY 2003 − REVISED AUGUST 2007
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3
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during
storage or handling to prevent electrostatic damage to the MOS gates.
4 ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
(1)
GC5016
Pad ring supply voltage, V
PAD
−0.3 V to 4 V
Core supply voltage, V
CORE
−0.3 V to 2.3 V
Input voltage (undershoot and overshoot), V
IN
−0.5 V to V
PAD
+0.5 V
Storage temperature, T
stg
−65°C to 150°C
Junction temperature, T
J
105°C
Lead soldering temperature (10 seconds) 300°C
Human body model 2 kV
ESD classification
Machine body model 200 V
ESD classification
Charged device model 500 V
Moisture sensitivity Level 3
(1)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
5 RECOMMENDED OPERATING CONDITIONS
MIN MAX UNITS
Pad ring supply voltage, V
PAD
3 3.6 V
Core supply voltage, V
CORE
1.6 2 V
Temperature ambient, no air flow, T
A
(1)
−40 85 _C
Junction temperature, T
J
(2)
105 _C
(1)
Chips specifications in the AC CHARACTERISTICS and DC CHARACTERISTICS tables are production tested at 100_C case temperature. QA
tests are performed at 85°C case temperature.
(2)
Thermal management may be required for full rate operation (see the THERMAL CHARACTERISTICS table). The circuit is designed for junction
temperatures up to 125°C. Sustained operation at elevated temperatures reduces long-term reliability. Lifetime calculations based on maximum
junction temperature of 105°C.
6 DC CHARACTERISTICS
−40°C to 85°C case temperature unless otherwise noted
PARAMETER
V
PAD
= 3 V to 3.6 V
UNIT
PARAMETER
MIN TYP MAX
UNIT
V
IL
Voltage input low
(1)
0.8 V
V
IH
Voltage input high
(1)
2 V
V
OL
Voltage output low (I
OL
= 2 mA)
(1)
0.5 V
V
OH
Voltage output high (I
OH
= −2 mA)
(1)
2.4 V
| I
IN |
Leakage current (V
IN
= 0 V or VPAD), inputs or outputs in high-impedance state condition
(1)
1 µA
| IPU | Pullup current (V
IN
= 0 V) ( TDI, TMS, TCK)
(1)
5 35 µA
I
CCQ
Quiescent supply current, I
CORE
or I
PAD
(V
IN
=0 or V
PAD
, RST = TRST = 0)
(1)
4 mA
C
IN
Data input capacitance (all inputs except CK)
(2)
4 pF
C
CK
Clock input capacitance (CK input)
(2)
13 pF
(1)
Each part is tested with a 100°C case temperature for the given specification.
(2)
Controlled by design and process and not directly tested.
NOTE:
General: Voltages are measured at low speed. Output voltages are measured with the indicated current load.
General: Currents are measured at nominal voltages, high temperature (100_C for production test, 85_C for QA).