Specifications

Publisher: IEEE Computer Society, 2001 L Street N.W., Suite 700, Washington, DC
20036-4928, United States
Abstract: The electromagnetic noise generated by terahertz photoconductive emitters was
investigated, and the intensity of noise spectrum was analysed by statistical method. The
relationship between the noise of the emitter and the resistivity as well as carrier lifetime of the
antenna material was obtained. And the effect of carrier lifetime and mobility of antennas on the
THz generation efficiency was investigated. © 2012 IEEE.
Number of references: 8
Main heading: Antennas
Controlled terms: Electrooptical effects - Terahertz waves
Uncontrolled terms: Electromagnetic noise - Noise investigation - Noise spectra
- Photoconductive emitters - Tera Hertz - THz generation
Classification code: 711 Electromagnetic Waves - 716 Telecommunication; Radar, Radio
and Television - 741.1 Light/Optics
DOI: 10.1109/IRMMW-THz.2012.6380254
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
4.
Accession number: 20130716012031
Title: Noise analysis and optimization of terahertz photoconductive emitters
Authors: Hou, Lei1 ; Shi, Wei1 ; Chen, Suguo1/侯磊;施卫;陈素果
Author affiliation:
1 Department of Applied Physics, Xian University of Technology, Xian 710048, China
Corresponding author: Hou, L. ([e-mail])
Source title: IEEE Journal on Selected Topics in Quantum Electronics
Abbreviated source title: IEEE J Sel Top Quantum Electron
Volume: 19
Issue: 1
Issue date: 2013
Publication year: 2013
Article number: 6156513
Language: English
ISSN: 1077260X
CODEN: IJSQEN
Document type: Journal article (JA)
Publisher: Institute of Electrical and Electronics Engineers Inc., 445 Hoes Lane / P.O. Box
1331, Piscataway, NJ 08855-1331, United States
Abstract: The electromagnetic noise generated by terahertz photoconductive emitters was
investigated, and the intensity of noise spectrum was analyzed by statistical method. The
relationship between the noise of the emitter and the resistivity as well as carrier lifetime of the
antenna material was obtained. And the effect of carrier lifetime and mobility of antennas on the
THz generation efficiency was investigated. Based on those results, GaAs:O material was
fabricated by an ion implantation technique to obtain the required performance. The
signal-to-noise ratio of the GaAs:O emitter was remarkably improved compared with a SI-GaAs