Specifications

Volume: 31
Issue: 1
Issue date: January 2013
Publication year: 2013
Pages: 60-64
Language: English
ISSN: 10020721
CODEN: JREAE6
Document type: Journal article (JA)
Publisher: Chinese Rare Earth Society, 2 Xinjiekouwai Dajie, Beijing, 100088, China
Abstract: Bi0.85La0.15FeO3 thin film was prepared on ATO glass substrates by sol-gel
technique. The effect of La doping on phase structure, film surface quality, ion valence, and
ferroelectric/magnetic properties of Bi0.85La0.15FeO3 film were investigated. La doping
suppressed the formation of impurity phases and the transition of Fe3+ to Fe2+ ions at room
temperature. Compared with the un-doped BiFeO3, La-doping also increased the average grain
size and the film density, which resulted in the decrease of film leakage current density. The
remanent polarization and saturation magnetization were enhanced significantly by La doping.
The remanent polarization of Bi 0.85La0.15FeO3 films gradually decreased while saturation
magnetization increased with the decrease of measuring temperature within a range from 50 to
300 K. © 2013 The Chinese Society of Rare Earths.
Number of references: 26
Main heading: Film preparation
Controlled terms: Iron oxides - Rare earths - Remanence - Saturation
magnetization - Semiconductor doping - Sol-gel process - Sol-gels - Substrates -
Thin films
Uncontrolled terms: Average grain size - Bismuth ferrites - Ferroelectric property
- Film density - Glass substrates - Impurity phasis - La doping - Low temperatures
- Measuring temperature - Multiferroic materials - Room temperature - Sol gel
preparations - Sol-gel technique
Classification code: 708.4 Magnetic Materials - 712.1 Semiconducting Materials -
714.2 Semiconductor Devices and Integrated Circuits - 804 Chemical Products Generally -
804.2 Inorganic Compounds - 813.1 Coating Techniques
DOI: 10.1016/S1002-0721(12)60235-X
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
8.
Accession number: 20130816046139
Title: Safety program for campus network application system
Authors: Yang, Peng1 ; Wei, Wei2 ; Shen, Peiyi3 ; Fan, Li4 ; Wang, Wei2 ; Wang, Feng2 ; Song,
Xin2 ; Wang, Zhixiao2 ; Wang, Yongchao2 ; Geng, Jiachen2/杨鹏;魏嵬;沈沛意;范黎;王伟;宋昕;王
志晓;王勇超;耿嘉晨
Author affiliation:
1 Department of Information Engineering, Shaanxi Polytechnic Institute, Shaanxi, Xian'yang,
712000, China