Specifications

Publication year: 2013
Pages: 190-193
Language: Chinese
ISSN: 1002185X
CODEN: XJCGEA
Document type: Journal article (JA)
Publisher: Rare Metals Materials and Engineering Press, P.O. Box 51, Xi'an, 721014, China
Abstract: The growth process of tantalum capacitor oxide film for 0603 size was investigated.
The main process parameters of dielectric film Ta2O5 quality including formation fluid type,
formation liquid concentration, current density and constant voltage time were employed to
carry out experiments. At last DC leakage current of wet measure was collected, and through
comparative experiments the best process parameters of the oxidation film growth were
obtained. In conclusion, the best process parameters are 0.2% (volume ratio) nitric acid solution,
40 mA/g current density and 5 h constant voltage time. Through the best process parameters, the
oxidation film quality can be improved greatly. Finally, leakage current is very small and comes to
0.036 μA. Copyright © 2013, Northwest Institute for Nonferrous Metal Research. Published by
Elsevier BV. All rights reserved.
Number of references: 15
Main heading: Tantalum
Controlled terms: Capacitors - Current density - Dielectric films - Experiments -
Film growth - Nitric acid - Oxide films - Tantalum oxides
Uncontrolled terms: Comparative experiments - Constant voltage - DC leakage current
- Formation fluids - Growth process - Liquid concentration - Main process - Nitric
acid solutions - Oxidation film - Process parameters - Tantalum capacitors -
Volume ratio
Classification code: 901.3 Engineering Research - 804.2 Inorganic Compounds - 804
Chemical Products Generally - 712.1.2 Compound Semiconducting Materials - 712.1
Semiconducting Materials - 708.1 Dielectric Materials - 704.1 Electric Components -
701.1 Electricity: Basic Concepts and Phenomena - 543.4 Tantalum and Alloys
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
19.
Accession number: 20131016076110
Title: A study on measuring urbanization process drag from urban-rural digital divide in China
Authors: Xue, Wei-Xian1 ; Liu, Jun1/薛伟贤;刘军
Author affiliation: 1 School of Economics and Management, Xi'an University of Technology,
710054, China
Corresponding author: Xue, W.-X.
Source title: International Conference on Management Science and Engineering - Annual
Conference Proceedings
Abbreviated source title: Int. Conf. Manage. Sci. Eng. - Annu. Conf. Proc.
Monograph title: 2012 International Conference on Management Science and Engineering,
ICMSE 2012 - 19th Annual Conference Proceedings
Issue date: 2012