Specifications
Corresponding author: Cai, H. (caihui35806505@163.com)
Source title: Materials Letters
Abbreviated source title: Mater Lett
Volume: 93
Issue date: 2013
Publication year: 2013
Pages: 263-265
Language: English
ISSN: 0167577X
CODEN: MLETDJ
Document type: Journal article (JA)
Publisher: Elsevier, P.O. Box 211, Amsterdam, 1000 AE, Netherlands
Abstract: We prepared various porous structures on magnesium substrates by microarc
oxidation (MAO) pretreatment in different solutions, and then controllably deposited electroless
nickel (EN) layers on them under identical plating conditions. The results indicate that the
microstructures, electrical and electrochemical properties of EN layers are highly dependent on
the porous surface. Thin layer including tiny nickel granule is deposited on
NaF-solution-pretreated substrates, but thick layer, consisting of typical nickel nodule, is formed
on substrates oxidized in Na2SiO3 solution, while excellent electrical conductivity and corrosion
resistance are obtained. Whereas, the reticular-structured layers with wormlike nickel as well as
high thickness and resistivity are area-selectively deposited on the substrate pretreated in
Na3PO4 solution. © 2012 Elsevier B.V.
Number of references: 11
Main heading: Substrates
Controlled terms: Corrosion resistance - Deposits - Electric conductivity -
Electric properties - Electrochemical properties - Magnesium - Microstructure -
Nickel - Sodium
Uncontrolled terms: Controlled deposition - Electrical conductivity - Electroless
nickel - Electroless nickel layer - Magnesium substrates - Microarc - Microarc
oxidation - Plating conditions - Porous structures - Porous surface -
Pre-Treatment - Thick layers - Thin layers
Classification code: 951 Materials Science - 933 Solid State Physics - 801.4.1
Electrochemistry - 801 Chemistry - 701.1 Electricity: Basic Concepts and Phenomena -
617 Turbines and Steam Turbines - 612 Engines - 549.2 Alkaline Earth Metals - 549.1
Alkali Metals - 548.1 Nickel - 539.1 Metals Corrosion - 532 Metallurgical Furnaces -
461 Bioengineering and Biology
DOI: 10.1016/j.matlet.2012.11.112
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
3.
Accession number: 20130215877088
Title: TEM characterization of Si films grown on 6H-SiC (0001) C-face
Authors: Li, Lianbi1, 2 ; Chen, Zhiming1 ; Xie, Longfei1 ; Yang, Chen1/李连碧;陈治明;谢龙
飞;杨陈










