Specifications

Author affiliation:

1 Department of Electronic Engineering, Xi'An University of Technology, Xi'an, China

2 School of Science, Xi'An Polytechnic University, Xi'an, China

Corresponding author: Chen, Z. (chenzm@xaut.edu.cn)

Source title: Materials Letters

Abbreviated source title: Mater Lett

Volume: 93

Issue date: 2013

Publication year: 2013

Pages: 330-332

Language: English

ISSN: 0167577X

CODEN: MLETDJ

Document type: Journal article (JA)

Publisher: Elsevier, P.O. Box 211, Amsterdam, 1000 AE, Netherlands

Abstract: Si films with ⟨111⟩ preferred orientation have been prepared on 6H-SiC (0001)

C-face by low-pressure chemical vapor deposition. The high-resolution transmission electron

microscopy and the selected area electron diffraction results indicate that the Si film has epitaxial

connection with the 6H-SiC substrate and the parallel-plane relationship of Si/6H-SiC

heterojunction is (111)Si//(0001)6H-SiC. Misfit dislocation array is clearly observed at the

Si/6H-SiC interface, which accommodates the most of lattice mismatch strain and make the

Number of references: 7

Main heading: Silicon carbide

Controlled terms: Chemical vapor deposition - Electron diffraction - Epitaxial

growth - Heterojunctions - Lanthanum compounds - Silicon - Transmission

electron microscopy - Vapors

Uncontrolled terms: Preferred orientations - Selected area electron diffraction -

Si films - SiC substrates - TEM characterization

Classification code: 932.2 Nuclear Physics - 813.1 Coating Techniques - 813 Coatings

and Finishes - 804 Chemical Products Generally - 741.3 Optical Devices and Systems -

714.2 Semiconductor Devices and Integrated Circuits - 712.1.1 Single Element

Semiconducting Materials

DOI: 10.1016/j.matlet.2012.11.093

Database: Compendex

Accession number: 20130215895269

Title: Passivity-based control of double-fed induction generator under unbalanced grid

voltage fault

Authors: Liu, Jun1 ; Jiang, Shuo-Dong1/刘军;蒋说东