Specifications

heterojunctions
Authors: Pu, Hong-Bin1 ; He, Xin1 ; Quan, Ru-Dai1 ; Cao, Lin1 ; Chen, Zhi-Ming1/蒲红斌;何欣;;
曹琳;陈治明
Author affiliation: 1 Department of Electronic Engineering, Xi'An University of Technology,
Xi'an 710048, China
Corresponding author: Pu, H.-B. (puhongbin@xaut.edu.cn)
Source title: Chinese Physics B
Abbreviated source title: Chin. Phys.
Volume: 22
Issue: 3
Issue date: March 2013
Publication year: 2013
Article number: 037301
Language: English
ISSN: 16741056
Document type: Journal article (JA)
Publisher: Institute of Physics Publishing, Temple Circus, Temple Way, Bristol, BS1 6BE, United
Kingdom
Abstract: In this paper, we propose a near-infrared p-type β-FeSi 2/n-type 4H-SiC
heterojunction photodetector with semiconducting silicide (β-FeSi2) as the active region for the
first time. The optoelectronic characteristics of the photodetector are simulated using a
commercial simulator at room temperature. The results show that the photodetector has a good
rectifying character and a good response to near-infrared light. Interface states should be
minimized to obtain a lower reverse leakage current. The response spectrum of the β-FeSi
2/4H-SiC detector, which consists of a p-type β-FeSi2 absorption layer with a doping
concentration of 1 × 1015 cm-3 and a thickness of 2.5 μm, has a peak of 755 mA/W at 1.42 μm.
The illumination of the SiC side obtains a higher responsivity than that of the β-FeSi2 side. The
results illustrate that the β-FeSi2/4H-SiC heterojunction can be used as a near-infrared
photodetector compatible with near-infrared optically-activated SiC-based power switching
devices. © 2013 Chinese Physical Society and IOP Publishing Ltd.
Number of references: 23
Main heading: Heterojunctions
Controlled terms: Infrared detectors - Photons - Silicides - Silicon carbide
Uncontrolled terms: Commercial simulators - Heterojunction photodetectors - Near
Infrared - Near-infrared photodiodes - Optoelectronic characteristics - Power
switching devices - Reverse leakage current - Spectral response
Classification code: 714.2 Semiconductor Devices and Integrated Circuits - 741.1
Light/Optics - 741.3 Optical Devices and Systems - 804 Chemical Products Generally -
804.2 Inorganic Compounds
DOI: 10.1088/1674-1056/22/3/037301
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
4.
Accession number: 20131316144069