Specifications

thermal quenching" phenomenon of near band-gap edge excitons is observed in the temperature
ranging from 30 K to 60 K, which identify two non-radiative processes and one negative thermal
quenching process.
Number of references: 29
Main heading: Substrates
Controlled terms: Alignment - Crystal orientation - Photoluminescence - Zinc -
Zinc oxide
Uncontrolled terms: Alignment growth - Crystallographic orientations - Hydrothermal
conditions - Hydrothermal processing - Nonradiative process - Pre-oxidation process
- Temperature-dependent photoluminescence - Zinc substrates
Classification code: 933.1.1 Crystal Lattice - 804.2 Inorganic Compounds - 801 Chemistry
- 741.1 Light/Optics - 601.1 Mechanical Devices - 546.3 Zinc and Alloys - 461
Bioengineering and Biology
DOI: 10.3724/SP.J.1077.2013.12225
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
7.
Accession number: 20131416174574
Title: Design of RCD active gate control circuit for series connected IGBTs
Authors: Ning, Dalong1 ; Tong, Xiangqian1 ; Li, Xia2 ; Liu, Ning2 ; Feng, Wutong2 ; Li, Yuning2/宁
大龙;同向前;李侠;刘宁;冯武彤;李育宁
Author affiliation: 1 Xi'an University of Technology, Xi'an 710048, China
2 Xi'an XD Power Systems Co., Ltd., Xi'an 710016, China
Corresponding author: Ning, D.
Source title: Diangong Jishu Xuebao/Transactions of China Electrotechnical Society
Abbreviated source title: Diangong Jishu Xuebao
Volume: 28
Issue: 2
Issue date: February 2013
Publication year: 2013
Pages: 192-198
Language: Chinese
ISSN: 10006753
CODEN: DIJXE5
Document type: Journal article (JA)
Publisher: Chinese Machine Press, 1 Nanjie Baiwanzhuang, Beijig, 100037, China
Abstract: The RCD active gate control circuit for series connected IGBTs is researched in order to
balance the IGBT's collector-emitter voltage dynamically. The principle of the RCD active gate
control circuit and parameters selection guide of the circuit elements is introduced. The function
of each element is analyzed with the help of equivalent circuit under different switch states of
IGBT, and the design method of RCD active gate control circuit is proposed to meet the voltage
balancing requirement. The feasibility of the proposed method is verified by an experimental
system, and the results show that voltage balancing is well achieved whether gate signal of IGBTs
in a series stack is synchronous or not.