Specifications

Uncontrolled terms: Degradation rate - HPLC spectrum - Initial concentration - Initial
pH value - Levofloxacin - pH value - Synergetic effect - Ultrasonic power
Classification code: 753.1 Ultrasonic Waves - 801 Chemistry - 801.1 Chemistry, General
- 802.2 Chemical Reactions - 804.2 Inorganic Compounds
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
8.
Accession number: 20132016340694
Title: Characterization of the lattice mismatched In0.68Ga0.32As Material Grown on InP
substrate by MOCVD
Authors: Zhu, Ya-Qi1, 2 ; Chen, Zhi-Ming1 ; Lu, Shu-Long2 ; Ji, Lian2 ; Zhao, Yong-Ming2 ; Tan,
Ming1, 2/朱亚旗;陈治明;陆书龙;季莲;赵勇明;谭明
Author affiliation: 1 Automation and Information Engineering Institute, Xi'an University of
Technology, Xi'an 710054, China
2 Suzhou Institute of Nano-Tech. and Nano-Bionics, Nano Devices FLOTU, Suzhou 215125,
China
Corresponding author: Zhu, Y.-Q. ([e-mail])
Source title: Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves
Abbreviated source title: Hongwai Yu Haomibo Xuebao
Volume: 32
Issue: 2
Issue date: April 2013
Publication year: 2013
Pages: 118-121
Language: Chinese
ISSN: 10019014
CODEN: HHXUEZ
Document type: Journal article (JA)
Publisher: Chinese Optical Society, 420 Zhong Shan Bei Yi Road, Shanghai, 200083, China
Abstract: The lattice mismatched In0.68Ga0.32 As materials were grown on InP substrate by
MOCVD technology. InAsxP1-x metamorphic buffer layer structures with various As compositions
were grown on InP substrates, which forms an alternative tension and strain offset buffer
structure, In this way, we got a strain relaxed InAsxP1-x "virtual" substrate, which is lattice
matched to In0.68Ga0.32As. With an optimized thickness of the buffer layer, the strain was
completely relaxed in the "virtual" substrate. The analysis of AFM, HRXRD, TEM and
photoluminescence(PL) indicated that this method can effectively improve the quality of the
In0.68Ga0.32As material.
Number of references: 13
Main heading: Gallium alloys
Controlled terms: Gallium - Strain relaxation - Substrates
Uncontrolled terms: Buffer structures - HRXRD - InAs - InP substrates -
Lattice-matched - Lattice-mismatched - Metamorphic buffer layer - Strain-relaxed
Classification code: 461 Bioengineering and Biology - 549.3 Nonferrous Metals and Alloys