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Probability Theory
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
© 2013 Elsevier Inc. All rights reserved.
20130629 新增 9 条
1.
Accession number: 20132516433097
Title: Effect of Na2SiO3 concentration on energy consumption during arcing process of
micro-arc oxidation on aluminum alloys
Authors: Ge, Yan-Feng1 ; Jiang, Bai-Ling1 ; Shi, Hui-Ying1/葛延峰;蒋百灵;时惠英
Author affiliation: 1 School of Materials Science and Engineering, Xi'an University of
Technology, Xi'an 710048, China
Corresponding author: Jiang, B.-L. ([e-mail])
Source title: Zhongguo Youse Jinshu Xuebao/Chinese Journal of Nonferrous Metals
Abbreviated source title: Zhongguo Youse Jinshu Xuebao
Volume: 23
Issue: 4
Issue date: April 2013
Publication year: 2013
Pages: 950-956
Language: Chinese
ISSN: 10040609
CODEN: ZYJXFK
Document type: Journal article (JA)
Publisher: Central South University of Technology, Hunan, Changsha, 410083, China
Abstract: The arcing process of micro-arc oxidation (MAO) on 1015 alloys aluminum (Al) using
pulse power source in aqueous solutions with different Na2SiO3 concentrations was studied. The
morphologies and surface resistance of initial films at arcing moment were analyzed and
observed using scanning electron microscope (SEM) and electrochemical test, respectively. The
effect of Na2SiO3 concentration on energy consumption of arcing process during MAO was
calculated based on change curve of voltage. The results indicate that there is no arcing
phenomenon but electrolytic etching on Al samples when the Na2SiO3 concentration is 0 and
voltage is 1500 V. With Na2SiO3 solution concentration increasing from 0.25 g/L to 10 g/L, arcing
voltage dropping from 1217 V to 351 V, arcing time reducing from 270 s to 40 s, the quantity of
microspores on surface of initial films increases during arcing process of MAO. The high
resistance film with resistance up to 105 order of magnitude formed on the surface of Al samples
is the premise of arcing phenomenon emerging in MAO process, and higher Na2SiO3 solution
concentration is beneficial to forming high resistance film. The energy consumption of arcing
process is diminished with Na2SiO3 solution concentration increasing, and minimum value is 16
kJ/dm2 when Na2SiO3 concentration is 10 g/L.
Number of references: 17