Specifications

Issue date: January 14, 2013

Publication year: 2012

Pages: 23-27

Language: English

ISSN: 08842914

E-ISSN: 20445326

CODEN: JMREEE

Document type: Journal article (JA)

Publisher: Cambridge University Press, 40 West 20th Street, New York, NY 10011-4211,

United States

Abstract: A technique of controlling growth gas flow rate for adjusting crystal resistivity is

presented in this paper. The experimental results showed that high growth gas flow rate could

affect SiC crystal resistivity remarkably. The SiC crystal resistivity would get higher and higher with

increasing growth gas flow rate. The purifying effect of gas flow rate was contributing to

resistivity increase at a relatively low flow rate range. As for the high gas flow rate, increase of

resistivity might be explained by the well-known site competition effect. Then, one explanation

for reducing nitrogen content in the crystal via increasing gas flow rate was put forward. Namely,

the Si component in the gas species may more easily go through the graphite crucible at the

initial stage to make the growth ambient C-rich when the gas flow rate is ∼800 sccm or more and

hence suppress nitrogen incorporation into carbon site to increase crystal resistivity. This result is

Number of references: 17

Main heading: Flow rate

Controlled terms: Electric conductivity - Flow of gases - Metal castings -

Nitrogen - Silicon carbide

Uncontrolled terms: Competition effects - Gas species - Graphite crucibles -

Growth ambient - High growth - High purity - High-resistivity SiC - Initial stages -

Nitrogen content - Nitrogen incorporation - Physical vapor transport - Purifying

effect - SiC

Classification code: 534.2 Foundry Practice - 631 Fluid Flow - 631.1.2 Gas Dynamics

- 701.1 Electricity: Basic Concepts and Phenomena - 804 Chemical Products Generally -

804.2 Inorganic Compounds

DOI: 10.1557/jmr.2012.203

Database: Compendex

Accession number: 20130415919816

Title: Blind detection of image splicing based on run length matrix combined properties

Authors: Liu, Han1 ; Yang, Yun1 ; Shang, Minqing1/刘涵;杨云;

Author affiliation:

1 School of Automation and Information Engineering, Xi'An University of Technology, Xi'an,