Specifications

bandwidths in all frequency numbers also demonstrate changes. According to the results
processed from SEM, Sb 3+ into the Bi4Ti3O12 (BIT) matrix had the effect of increasing the
material grain size. Εr, Εm, Pr, d33 and Tc of Bi 3.90Sb0.10Ti3O12 ceramics are found to be 307,
3492, 8.09 μC cm-2, 18 pC/N and 660 C, respectively. And Bi4-xSbxTi3O12 ceramics have good
temperature stability, which is very suitable for the practical high-temperature applications. ©
2013 Elsevier B.V. All rights reserved.
Number of references: 13
Main heading: Electric properties
Controlled terms: Ceramic materials - Raman spectroscopy
Uncontrolled terms: Electrical response - Grain
size - High-T - Lead-Free - Phase development - Pyrochlores - Temperature
stability - X ray methods
Classification code: 701.1 Electricity: Basic Concepts and Phenomena - 741.1
Light/Optics - 812.1 Ceramics
DOI: 10.1016/j.cap.2013.06.029
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
3.
Accession number: 20133216581253
Title: Structural and photoelectrical characteristics of Si/6H-SiC heterojunctions
prepared by hot-wall chemical vapor deposition
Authors: Yang, Chen1, 2 ; Chen, Zhiming3 ; Liu, Weiguo1 ; Zeng, Xierong2/杨陈;陈治明;刘
卫国;;
Author affiliation:
1 Shaanxi Province Thin Film Technology and Optical Test Open Key Laboratory, Xi'An
Technological University, Xi'an 710048, China
2 Shenzhen Key Laboratory of Special Functional Materials, Shenzhen University, Shenzhen
518060, China
3 Department of Electronic Engineering, Xi'An University of Technology, Xi'an 710048, China
Corresponding author: Yang, C. ([e-mail])
Source title: Materials Science in Semiconductor Processing
Abbreviated source title: Mater Sci Semicond Process
Volume: 16
Issue: 6
Issue date: 2013
Publication year: 2013
Pages: 1765-1768
Language: English
ISSN: 13698001
Document type: Journal article (JA)
Publisher: Elsevier Ltd, Langford Lane, Kidlington, Oxford, OX5 1GB, United Kingdom
Abstract: Based on a potential application for the Si/SiC heterojunction to realize light
control of SiC devices, structures and electrical properties of boron-doped silicon layer deposited
on the n-type 6H-SiC substrate by hot-wall chemical vapor deposition were investigated in this