Specifications

- Distributed problems - Distribution problem - Distribution strategies - Optimal
compressibility configuration - Optimal distributions - Slepian-Wolf coding
Classification code: 723 Computer Software, Data Handling and Applications - 732 Control
Devices - 921 Mathematics - 921.5 Optimization Techniques - 951 Materials Science
DOI: 10.4304/jnw.8.9.2078-2084
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
4.
Accession number: 20133716741528
Title: High power laser diode with non-absorbing windows fabricated by quantum well
intermixing
Authors: Lin, T.1 ; Zhang, H.Q.1 ; Li, C.1 ; Ma, X.J.1 ; Lin, N.2 ; Zheng, K.2 ; Ma, X.Y.2/林涛;;;;;;;
Author affiliation: 1 School of Automation and Information Engineering, Xi'an University of
Technology, P.O. Box 710048, Xi'an, China
2 Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 100083, Beijing, China
Corresponding author: Lin, T. ([e-mail])
Source title: International Journal of Nanomanufacturing
Abbreviated source title: Int. J. Nanomanufacturing
Volume: 9
Issue: 3-4
Monograph title: Special Issue on New Energy Materials and Nanotechnology - Part I
Issue date: 2013
Publication year: 2013
Pages: 368-374
Language: English
ISSN: 17469392
E-ISSN: 17469406
Document type: Conference article (CA)
Publisher: Inderscience Enterprises Ltd., Editorial Office, P O Box 735, Olney, Bucks., MK46 5WB,
MK46 5WB, United Kingdom
Abstract: Characterisation techniques based on quantum well intermixing have recently
emerged as novel and exploratory methods for developing high power laser diodes. In this paper,
we demonstrate the application of Zn impurities induced quantum well intermixing techniques to
the non-absorbing windows fabrication for the AlGaInP/GaInP active region red-light laser diodes.
The experimental results demonstrate that the photoluminescence characterisation had a blue
shift of 23 nm for the diffusion parameters of 540°C and 20 minutes, and the maximum output
power from the light-current tests of the thereafter fabricated non-absorbing windows laser
diodes were improved by 47% than the conventional LDs. Copyright © 2013 Inderscience
Enterprises Ltd.
Number of references: 7
Main heading: Semiconductor quantum wells
Controlled terms: Fabrication - High power lasers - Metallorganic chemical vapor
deposition - Mixing - Organic chemicals - Semiconductor lasers