Specifications

power aggregation operators are developed, and their properties are investigated. An accuracy
function and a set of comparison rules are established for ranking hesitant fuzzy sets. Moreover,
an approach to multiple-attribute decision-making with hesitant information is developed on the
basis of the power aggregation operators and comparison rules. Finally, an application of them to
multiple-attribute decision-making is given by an illustrative example. © 2013 IEEE.
Number of references: 14
Main heading: Decision making
Controlled terms: Fuzzy sets - Management science - Mathematical operators
Uncontrolled terms: Accuracy functions - Aggregation operator - Comparison rules -
Fuzzy information - Fuzzy power - Hesitant fuzzy sets - Multiple attribute decision
making - Power average operators
Classification code: 912.2 Management - 921 Mathematics
DOI: 10.1109/ICMSE.2013.6586303
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
2.
Accession number: 20133916789772
Title: Experimental study of surface flashover field of SI-GaAs photoconductive semiconductor
switch
Authors: Ji, Weili1 ; Shi, Wei1, 2/纪卫莉;李守义
Author affiliation: 1 Applied Physics Department, Xi'an University of Technology, Xi'an 710048,
China
2 State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University,
Xi'an 710049, China
Corresponding author: Ji, W. ([e-mail])
Source title: Gaodianya Jishu/High Voltage Engineering
Abbreviated source title: Gaodianya Jishu
Volume: 39
Issue: 8
Issue date: August 2013
Publication year: 2013
Pages: 1919-1924
Language: English
ISSN: 10036520
CODEN: GAJIE5
Document type: Journal article (JA)
Publisher: Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China
Abstract: With its unique features, photoconductive semiconductor switch (PCSS) is generally
recognized today as a promising power electronic device. However, a major limitation of PCSS is
its surprisingly low voltage threshold of surface flashover (SF). In this paper, an experimental
study of surface flashover of a back-triggered PCSS is presented. The PCSSs with electrode gap of
18 mm are fabricated from liquid encapsulated czochralski (LEC) semi-insulating gallium arsenide
(SI-GaAs), and they are either un-coated, or partly coated, or entirely coated PCSSs with