Specifications

high-strength transparent insulation. The SF fields of the PCSSs are measured and discussed.
According to the experimental results, the high-dielectric-strength coating is efficient in both
reducing the gas desorption from semiconductor and increasing the SF field: a well-designed
PCSS can resist a voltage up to 20 kV under the repetition frequency of 30 Hz. The physical
mechanism of the PCSS SF is analyzed, and the conclusion is made that having a channel
structure, the SF is the breakdown of the contaminated dielectric layer at the
semiconductor-ambient dielectric interface. The non-uniform distribution of the surface field and
the gas desorption due to thermal effects of semiconductor surface currents are key factors
causing the SF field reduction.
Number of references: 27
Main heading: Gallium arsenide
Controlled terms: Coatings - Desorption - Discharge (fluid mechanics) - Electric fields
- Electric power systems - Photoconductive switches
Uncontrolled terms: Dielectric coatings - Liquid encapsulated czochralski - Non-uniform
distribution - Photoconductive semiconductor switches - Power electronic devices -
Semi-insulating gallium arsenide - SI-GaAs - Surface flashover
Classification code: 804 Chemical Products Generally - 802.3 Chemical Operations -
714.2 Semiconductor Devices and Integrated Circuits - 706.1 Electric Power Systems -
701.1 Electricity: Basic Concepts and Phenomena - 539 Metals Corrosion and Protection;
Metal Plating - 407 Maritime and Port Structures; Rivers and Other Waterways
DOI: 10.3969/j.issn.1003-6520.2013.08.016
Database: Compendex
Compilation and indexing terms, © 2013 Elsevier Inc.
3.
Accession number: 20133916786695
Title: Wear behaviors of Cf/Mg composites fabricated by extrusion directly following vacuum
pressure infiltration technique
Authors: Qi, Lehua1, 2 ; Guan, Juntao1 ; Liu, Jian1, 3 ; Zhou, Jiming1, 2 ; Wei, Xinliang1/;;刘健;;;
Author affiliation: 1 School of Mechatronic Engineering, Northwestern Polytechnical
University, Xi'an 710072, China
2 Key Laboratory of Contemporary Design and Integrated Manufacturing Technology, Ministry
of Education, Northwestern Polytechnical University, Xi'an 710072, China
3 Institute of Printing and Packaging Engineering, Xi'an University of Technology, Xi'an 710048,
China
Corresponding author: Qi, L. ([e-mail])
Source title: Wear
Abbreviated source title: Wear
Volume: 307
Issue: 1-2
Issue date: September 30, 2013
Publication year: 2013
Pages: 127-133
Language: English