Product Info

M
In order to
m
the module
,
be as short
In order to
e
with the foll
o
 It is im
p
of US
B
 Do not
import
a
and lo
w
 Pay at
t
the ca
p
 Keep t
h
EC25 mod
u
NOTE
E
USB_DP
USB_DM
GND
M
odule
USB_VBUS
m
eet USB
d
,
and then t
h
as possible
e
nsure the
U
o
wing princi
p
ortant to ro
B
differential
route sign
a
a
nt to route
w
er laye
r
s b
u
t
ention to th
e
p
acitance v
a
h
e ESD co
m
u
le can only
E
C25-A_U
s
Minimize
VDD
Figure
1
d
ata line sig
h
ese resist
o
.
U
SB interfa
c
ples.
ute the US
B
trace is 90
o
a
l traces un
the USB di
u
t also right
e
influence
o
a
lue should
b
m
ponents a
s
be used as
s
e
r
_Manual
C
R1
R2
Close to
M
R3
R4
this stub
1
9: Refere
n
nal integrit
y
o
rs should b
e
c
e design c
o
B
signal trac
e
o
hm.
der crystal
s
fferential tr
a
and left sid
e
o
f junction c
b
e less tha
n
s
close as p
o
a slave de
v
C
onfidenti
a
M
odule
NM_0R
NM_0R
0R
0R
n
ce Circuit
o
y
, compone
n
e
placed cl
o
o
rrespondin
g
e
s as differ
e
s
, oscillator
s
a
ces in inn
e
e
s.
apacitance
o
n
2pF.
o
ssible to th
e
v
ice.
a
l / Release
Test Poi
n
ESD Arra
y
o
f USB Ap
p
n
ts R1, R2,
R
o
se to each
o
g
with the U
S
e
ntial pairs
w
s
, magnetic
er
-layer with
o
f ESD co
m
e
USB con
n
d 35 /
6
n
ts
y
p
lication
R
3 and R4
m
o
ther. The
e
S
B 2.0 spe
c
w
ith total gr
o
devices an
d
ground shi
e
m
ponent on
U
n
ector.
L
EC25-AU
6
9
USB_DP
USB_DM
GND
MCU
m
ust be pl
a
e
xtra stubs
o
c
ification, pl
e
o
unding. Th
e
d
RF signal
e
lding onn
o
U
SB data li
n
L
TE Modul
e
ser Manu
a
ced close t
o
o
f trace mu
s
e
ase compl
y
e
impedanc
e
traces. It i
s
o
t only uppe
n
es. Typicall
y
e
a
l
o
s
t
y
e
s
r
y
,