Product Info

LTE Module Series
AG35-Quecopen
Hardware Design
AG35-QuecOpen_Hardware_Design 25 / 137
V
IL
max=0.5V diode drop in the
Qualcomm chipset.
RESET_N 1 DI Reset the module
V
IH
max=2.1V
V
IH
min=1.3V
V
IL
max=0.5V
Internally pulled up to
1.8V. Active low.
SHDN_N 176 DI
Emergency
shutdown for the
module
V
IH
max=2.1V
V
IH
min=1.3V
V
IL
max=0.5V
(U)SIM Interface
Pin Name Pin No. I/O Description DC Characteristics Comment
USIM_GND 24
Specified ground for
(U)SIM card
Connect to ground of
(U)SIM card
connector.
USIM_
PRESENCE
25 DI
(U)SIM card
insertion detection
V
IL
min=-0.3V
V
IL
max=0.6V
V
IH
min=1.2V
V
IH
max=2.0V
1.8V power domain.
If unused, keep it
open.
USIM_VDD 26 PO
Power supply for
(U)SIM card
For 1.8V (U)SIM:
Vmax=1.9V
Vmin=1.7V
For 3.0V (U)SIM:
Vmax=3.05V
Vmin=2.7V
I
O
max=50mA
Either 1.8V or 3.0V is
supported by the
module automatically.
USIM_CLK 27 DO
Clock signal of
(U)SIM card
For 1.8V (U)SIM:
V
OL
max=0.45V
V
OH
min=1.35V
For 3.0V (U)SIM:
V
OL
max=0.45V
V
OH
min=2.55V
USIM_RST 28 DO
Reset signal of
(U)SIM card
For 1.8V (U)SIM:
V
OL
max=0.45V
V
OH
min=1.35V
For 3.0V (U)SIM:
V
OL
max=0.45V
V
OH
min=2.55V
USIM_DATA 29 IO
Data signal of
(U)SIM card
For 1.8V (U)SIM:
V
IL
max=0.6V
V
IH
min=1.2V