EG915N Series Hardware Design LTE Standard Module Series Version: 1.1.
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LTE Standard Module Series This document may refer to hardware, software and/or documentation owned by one or more third parties (“third-party materials”). Use of such third-party materials shall be governed by all restrictions and obligations applicable thereto.
LTE Standard Module Series Safety Information The following safety precautions must be observed during all phases of operation, such as usage, service or repair of any cellular terminal or mobile incorporating the module. Manufacturers of the cellular terminal should notify users and operating personnel of the following safety information by incorporating these guidelines into all manuals of the product. Otherwise, Quectel assumes no liability for customers’ failure to comply with these precautions.
LTE Standard Module Series About the Document Revision History Version Date Author Description - 2021-11-19 Shihao HUANG/ Jeff SHEN Creation of the document 1.0 2022-02-25 Shihao HUANG/ Jeff SHEN First official release Shihao HUANG/ Evan ZOU Preliminary: 1. Add information about EG915N-LA module. 2. Updated USB serial drivers from Linux 2.6–5.15 to Linux 2.6–5.18. (Table 4) 3. Updated weight from 3.2 g to 2.46 g. (Table 4) 4. Updated frequency range of GNSS from 1559–1606 to 1559–1609.
LTE Standard Module Series Contents Safety Information .................................................................................................................................... 3 About the Document ................................................................................................................................ 4 Contents ....................................................................................................................................................
LTE Standard Module Series 3.12.2. Microphone Interface Design ....................................................................................... 46 3.12.3. Earpiece and Loudspeaker Interface Design ............................................................... 46 3.13. PCM and I2C Interfaces ........................................................................................................ 47 3.14. Network Status Indication........................................................................
LTE Standard Module Series 8.3.1. 8.3.2. 8.3.3. 9 Carrier Tape ................................................................................................................. 84 Plastic Reel .................................................................................................................. 85 Packaging Process ...................................................................................................... 86 Appendix References ......................................................
LTE Standard Module Series Table Index Table 1: Special Mark .............................................................................................................................. 14 Table 2: Frequency Bands of EG915N-EU .............................................................................................. 15 Table 3: Frequency Bands of EG915N-LA .............................................................................................. 15 Table 4: Key Features ..........................
LTE Standard Module Series Table 42: Electrostatics Discharge Characteristics (25 ºC, 45 % Relative Humidity) ............................... 75 Table 43: EG915N-EU RF Output Power ................................................................................................ 79 Table 44: EG915N-LA RF Output Power ................................................................................................. 79 Table 45: Recommended Thermal Profile Parameters ............................................
LTE Standard Module Series Figure Index Figure 2: Pin Assignment (Top View) ....................................................................................................... 20 Figure 3: Sleep Mode Application via UART............................................................................................ 27 Figure 4: Sleep Mode Application with USB Remote Wakeup................................................................. 28 Figure 5: Sleep Mode Application with MAIN_RI .....................
LTE Standard Module Series Figure 43: Bottom Dimensions (Bottom View) ......................................................................................... 77 Figure 44: Recommended Footprint (Top View) ...................................................................................... 78 Figure 45: Top View and Bottom View of the Module .............................................................................. 80 Figure 46: Recommended Reflow Soldering Thermal Profile ..........................
LTE Standard Module Series 1 Introduction This document defines the EG915N series module and describes its air interface and hardware interfaces which are connected with your applications. This document can help you quickly understand module interface specifications, electrical and mechanical details, as well as other related information of the module. Associated with application notes and user guides, you can use the module to design and set up wireless applications easily. 1.
LTE Standard Module Series Federal Communication Commission Interference Statement This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules.
LTE Standard Module Series 1.1. Special Mark Table 1: Special Mark Mark Definition * Unless otherwise specified, when an asterisk (*) is used after a function, feature, interface, pin name, AT command, or argument, it indicates that the function, feature, interface, pin, AT command, or argument is under development and currently not supported; and the asterisk (*) after a model indicates that the sample of the model is currently unavailable.
LTE Standard Module Series 2 Product Overview 2.1. Frequency Bands and Functions EG915N series module is an LTE-FDD and GSM wireless communication module, which provides data connectivity on LTE-FDD, EDGE and GPRS networks. It also provides voice functionality for your specific applications. The module also provides a type of model with built-in GNSS function. You can choose a dedicated type based on the region or operator. The following table shows the frequency bands of the module.
LTE Standard Module Series 2.2. Key Features The following table describes the detailed features of the module. Table 4: Key Features Features Details Power Supply Supply voltage: 3.4–4.5 V Typical supply voltage: 3.
LTE Standard Module Series PCM Interface Supports one analog audio input and one analog audio output GSM: HR/FR/EFR/AMR/AMR-WB Supports echo cancellation and noise suppression Used for audio function with an external codec Short frame mode: module can be used as the slave device* and master device Long frame mode*: module can only be used as the master device USB Interface UART Interfaces Compliant with USB 2.
LTE Standard Module Series RoHS All hardware components are fully compliant with EU RoHS directive 2.3. EVB Kit To help you develop applications with the module, Quectel provides an evaluation board (UMTS & LTE EVB), USB to RS-232 converter cable, earphone, antenna and other peripherals to control or test the module. For more details, see document [1].
LTE Standard Module Series 3 Application Interfaces 3.1. General Description The module is equipped with 126 LGA pins that can be connected to cellular application platform. The subsequent chapters will provide detailed descriptions of the following interfaces.
LTE Standard Module Series 3.2. Pin Assignment GND 51 52 53 50 PPS_GNSS VBAT_RF VBAT_RF 54 GND 55 GND 56 RESERVED 57 RESERVED 58 GND 59 GND ANT_MAIN GND 60 61 GND 62 The following figure shows the pin assignment of the module.
LTE Standard Module Series 3.3. Pin Description The following tables show the pin definition and description of the module. Table 5: I/O Parameters Definition Type Description AI Analog Input AIO Analog Input/Output AO Analog Output DI Digital Input DO Digital Input/Output DIO Digital Output OD Open Drain PI Power Input PO Power Output Table 6: Pin Description Power Supply Input Pin Name VBAT_BB Pin No.
LTE Standard Module Series 29 PO Provide 1.8 V for external circuit Vnom = 1.8 V IOmax = 50 mA Power supply for external GPIO’s pull-up circuits. If unused, keep it open. Pin Name Pin No. I/O Description DC Characteristics Comment PWRKEY 15 DI Turn on/off the module VDD_EXT Turn On/Off VBAT power domain. VILmax = 0.5 V RESET_N 17 DI Reset the module Active low. 1.8 V power domain. If unused, keep it open. Status Indication Pin Name Pin No.
LTE Standard Module Series supply USIM1_RST 44 DO (U)SIM1 card reset USIM1_DATA 45 DIO (U)SIM1 card data USIM1_CLK 46 DO (U)SIM1 card clock USIM1_GND 47 USIM2_DET 83 DI (U)SIM2 card hot-plug detect USIM2_CLK 84 DO (U)SIM2 card clock USIM2_RST 85 DO (U)SIM2 card reset USIM2_DATA 86 DIO (U)SIM2 card data USIM2_VDD 87 1.8/3.0 V (U)SIM card is supported and can be identified automatically by the module. USIM1_VDD 1.8/3.
LTE Standard Module Series MAIN_DCD 38 DO Main UART data carrier detect MAIN_RI 39 DO Main UART ring indication If unused, keep them open. Auxiliary UART Interface* Pin Name AUX_RTS Pin No. 25 I/O DI Description DC Characteristics Comment DTE request to send signal to DCE Connect to DTE’s RTS. If unused, keep it open. Connect to DTE’s CTS. If unused, keep it open.
LTE Standard Module Series PCM_DIN 6 DI PCM data input PCM_DOUT 7 DO PCM data output I2C_SCL 40 OD I2C serial clock I2C_SDA 41 OD I2C serial data An external 1.8 V pull-up resistor is required. If unused, keep them open. Analog Audio Interfaces Pin Name Pin No.
LTE Standard Module Series AP_READY W_DISABLE# USB_BOOT PPS_GNSS 19 18 75 51 DI Application processor ready open. DI Airplane mode control Pull-up by default. In low voltage level, module can enter airplane mode. If unused, keep it open. DI Force the module into emergency download mode Active high. It is recommended to reserve test points. PPS output Cannot pull it down when GNSS function is active. DO RESERVED Pins Pin Name Pin No.
LTE Standard Module Series Airplane Mode AT+CFUN=4 or W_DISABLE# pin can set the module to airplane mode. In this case, RF function will be invalid. Sleep Mode In this mode, the current consumption of the module is reduced to the minimal level. During this mode, the module can still receive paging message, SMS, voice call and TCP/UDP data from the network normally. Power Down Mode In this mode, the module’s power supply is cut off by its power management IC.
LTE Standard Module Series Drive MAIN_DTR low by host will wake up the module. When the module have a URC to report, the URC will trigger the behavior of MAIN_RI pin. See Chapter 3.18 for details about MAIN_RI behaviors. 3.5.1.2. USB Application with USB Remote Wakeup Function If the host supports USB suspend/resume and remote wakeup functions, the following three preconditions must be met at the same time to let the module enter sleep mode. Execute AT+QSCLK=1 to enable the sleep mode.
LTE Standard Module Series Module Host VDD USB_VBUS USB_DP USB_DP USB_DM USB_DM AP_READY GPIO MAIN_RI EINT GND GND Figure 4: Sleep Mode Application with MAIN_RI Sending data to the module through USB will wake up the module. When the module has a URC to report, the URC will trigger the behavior of MAIN_RI pin. See Chapter 3.18 for details about MAIN_RI behavior. 3.5.1.4.
LTE Standard Module Series You can wake up the module by turning on the power switch to supply power to USB_VBUS. NOTE 1. Pay attention to the level match shown in dotted line between the module and the host in the circuit diagrams of Chapter 3.5.1. 2. For more information about the AT command, see document [2] for details. 3.5.2. Airplane Mode When the module enters airplane mode, the RF function does not work and all AT commands related to the RF function are inaccessible.
LTE Standard Module Series 3.6. Power Supply 3.6.1. Power Supply Pins The module provides four VBAT pins dedicated to connecting with the external power supply. There are two separate voltage domains for VBAT. Two VBAT_RF pins for module’s RF part Two VBAT_BB pins for module’s baseband part Table 8: Power Supply and GND Pins Pin Name Pin No. Description Min. Typ. Max. Unit VBAT_RF 52, 53 Power supply for the module’s RF part 3.4 3.8 4.
LTE Standard Module Series expanded to two sub paths with star configuration. The width of VBAT_BB trace should be no less than 1 mm; and the width of VBAT_RF trace should be no less than 2 mm. In principle, the longer the VBAT trace is, the wider it will be. In addition, in order to ensure the stability of power source, it is suggested that a WS4.5D3HV TVS diode of which reverse stand-off voltage is 4.7 V and peak pulse power is up to 2550 W should be used.
LTE Standard Module Series MIC29302WU DC_IN VBAT 470 µF 5 3 1 51K 4 ADJ OUT GND IN EN 2 100K 1% 330 Ω 4.7K 100 nF VBAT_EN 470 µF 100 nF 47K 1% 47K Figure 8: Reference Circuit of Power Supply 3.7. Turn On and Turn Off 3.7.1. Turn On with PWRKEY Table 9: Pin Description of PWRKEY Pin Name Pin No. I/O Description Comment PWRKEY 15 DI Turn on/off the module VBAT power domain.
LTE Standard Module Series Another way to control the PWRKEY is using a button directly. a TVS component is indispensable to be placed nearby the button for ESD protection. A reference circuit is shown in the following figure. S1 PWRKEY ESD Close to S1 Figure 10: Reference Circuit of Turning on the Module with a Button The timing of turning on the module is illustrated in the following figure. NOTE 1 VBAT PWRKEY 500 ms VIL 0.
LTE Standard Module Series NOTE 1. 2. Make sure that VBAT is stable before pulling down PWRKEY pin. It is recommended that the time difference between powering up VBAT and pulling down PWRKEY pin is no less than 30 ms. PWRKEY can be pulled down directly to GND with a recommended 4.7 kΩ resistor if the module needs to be turned on automatically and shutdown is not needed. 3.7.2. Turn Off The following procedures can be used to turn off the module normally: Use the PWRKEY pin. Execute AT+QPOWD. 3.
LTE Standard Module Series NOTE 1. 2. To avoid corrupting the data in the internal flash, do not switch off the power supply when the module works normally. Only after the module is shut down with PWRKEY or AT command, the power supply can be cut off. When turning off module with the AT command, keep PWRKEY at high level after the execution of the command. Otherwise, the module will turn on again after successful turn-off. 3.8. Reset The RESET_N pin can be used to reset the module.
LTE Standard Module Series S2 RESET_N ESD Close to S2 Figure 14: Reference Circuit of RESET_N with a Button The reset scenario is illustrated in the following figure. VBAT ≥ 300 ms VIH ≥ 1.3 V RESET_N VIL ≤ 0.5 V Module Status Running Baseband resetting Baseband restart Figure 15: Reset Timing NOTE 1. 2. Ensure that the load capacitance does not exceed 10 nF on PWRKEY and RESET_N pins. RESET_N only resets the internal baseband chip of the module and does not reset the power management chip.
LTE Standard Module Series 3.9. (U)SIM Interfaces The module provides two (U)SIM interfaces, which meet ETSI and IMT-2000 requirements. Either 1.8 V or 3.0 V (U)SIM card is supported. The module supports Dual SIM Single Standby. Table 11: Pin Definition of (U)SIM Interfaces Pin Name Pin No. I/O Description Comment USIM1_DET 42 DI (U)SIM1 card hot-plug detect 1.8 V power domain. If unused, keep it open. Either 1.8 V or 3.
LTE Standard Module Series VDD_EXT USIM_VDD MAIN GND 51K Connect to main GND of PCB 15K 100 nF USIM_GND USIM_VDD USIM_RST Module VCC RST 0R USIM_CLK USIM_DET (U)SIM Card Connector 0R CLK GND VPP Switch IO 0R USIM_DATA GND 33 pF 33 pF 33 pF TVS array GND GND Figure 16: Reference Circuit of (U)SIM Interface with an 8-pin (U)SIM Card Connector If the function of (U)SIM card hot-plug is not needed, please keep USIM_DET disconnected.
LTE Standard Module Series Keep (U)SIM card signals away from RF and VBAT traces. Make sure the ground between the module and the (U)SIM card connector is short and wide. Keep the trace width of ground and USIM_VDD not less than 0.5 mm to maintain the same electric potential. If the ground is complete on your PCB, USIM_GND can be connected to PCB ground directly. To avoid cross-talk between USIM_DATA and USIM_CLK, keep them away from each other and shield them with surrounded ground.
LTE Standard Module Series Test Points Minimize these stubs Module VDD R1 NM_0R R2 NM_0R MCU ESD Array USB_VBUS L1 USB_DM USB_DM USB_DP USB_DP Close to Module GND GND Figure 18: Reference Circuit of USB Application A common mode choke L1 is recommended to be added in series between the module and MCU to suppress EMI spurious transmission.
LTE Standard Module Series RTS and CTS hardware flow control. Auxiliary UART* interface supports RTS and CTS hardware flow control. Debug UART interface supports 115200 bps baud rate. It is used for partial log output. Table 13: Pin Definition of Main UART Interface Pin Name Pin No. I/O Description MAIN_DTR 30 DI Main UART data terminal ready MAIN_RXD 34 DI Main UART receive MAIN_TXD 35 DO Main UART transmit DO DTE clear to send signal from DCE Connect to DTE’s CTS. 1.
LTE Standard Module Series Table 15: Pin Definition of Debug UART Interface Pin Name Pin No. I/O Description Comment DBG_RXD 22 DI Debug UART receive DBG_TXD 23 DO Debug UART transmit 1.8 V power domain. If unused, keep them open. The module provides a 1.8 V UART interface. Use a voltage-level translator if the application is equipped with a 3.3 V UART interface. A voltage-level translator TXS0108EPWR provided by Texas Instruments is recommended. The following figure shows a reference design.
LTE Standard Module Series 4.7K VDD_EXT VDD_EXT 1 nF MCU/ARM Module 10K TXD MAIN_RXD RXD MAIN_TXD 1 nF 10K VDD_MCU 4.7K VDD_EXT RTS CTS GPIO MAIN_RTS MAIN_CTS MAIN_DTR EINT GPIO GND MAIN_RI MAIN_DCD GND Figure 20: Reference Circuit with Transistor Circuit NOTE 1. 2. Transistor circuit solution is not suitable for applications with baud rates exceeding 460 kbps. Note that the module CTS is connected to the host CTS, and the module RTS is connected to the host RTS. 3.12.
LTE Standard Module Series drive external power amplifier devices if the output power rate cannot meet the demand. If unused, keep them open. AI channels are differential input channels, which can be applied for input of microphone (usually an electret microphone is used). AO channels are differential output channels, which can be applied for output of earpiece. You can use the AT+QMIC to adjust the input gain of the microphone, or AT+CLVL to adjust the volume gain output to the handset.
LTE Standard Module Series 3.12.2. Microphone Interface Design The microphone channel reference circuit is shown in the following figure. Close to Microphone Close to Module MICBIAS GND 510R Module 100 nF 1.5K 2.2 µF Differential layout GND GND E SD P rotecti on Component 10 pF 33 pF 10 pF 33 pF MIC_P MIC_N 100 nF Electret Microphone 1.
LTE Standard Module Series Close to Loudspeaker GND Differential layout 33 pF ESD Protection Component Amplifier circuit SPK_P Module 10 pF 10 pF 33 pF 10 pF 33 pF SPK_N ESD Protection Component GND Figure 23: Reference Circuit of External Audio Amplifier Output For differential input and output audio power amplifiers, please visit http://www.ti.com to obtain the required devices. There are also many audio power amplifiers with the same performance to choose from on the market. 3.13.
LTE Standard Module Series Long frame mode*: Module can only be used as the master device The module supports 16-bit linear encoding format. The following two figures are the short frame mode timing diagram (PCM_SYNC = 8 kHz, PCM_CLK = 2048 kHz) and the long frame mode timing diagram (PCM_SYNC = 8 kHz, PCM_CLK = 256 kHz).
LTE Standard Module Series In long frame mode, data is sampled on the falling edge of PCM_CLK,and sent on the rising edge. The rising edge of PCM_SYNC represents the high effective bit. In this mode, the PCM interface supports 256 kHz, 512 kHz, 1024 kHz and 2048 kHz PCM_CLK at 8 kHz, 50% duty cycle PCM_SYNC. The clock and mode can be configured through AT commands, and the default configuration is short frame mode, PCM_CLK = 2048 kHz, PCM_SYNC =8 kHz.
LTE Standard Module Series Table 18: Pin Definition of Network Connection Status/Activity Indication Pin Name NET_STATUS Pin No. 21 I/O Description Comment DO Indicate the module’s network activity status 1.8 V power domain. If unused, keep it open.
LTE Standard Module Series Table 20: Pin Definition of USB_BOOT Interface Pin Name USB_BOOT Pin No. I/O 75 DI Description Comment Force the module into emergency download mode 1.8 V power domain. Active high. It is recommended to reserve test points. The following figure shows a reference circuit and timing sequence for entering emergency download mode of USB_BOOT interface. Module VDD_EXT 4.
LTE Standard Module Series NOTE 1. 2. Make sure that VBAT is stable before pulling down PWRKEY pin. It is recommended that the time between powering up VBAT and pulling down PWRKEY pin is no less than 30 ms. When using MCU to control module to enter the emergency download mode, please follow the above timing sequence. It is not recommended to pull up USB_BOOT to 1.8 V before powering up VBAT. Directly connect the test points as shown in Figure 28 can manually force the module to enter download mode. 3.
LTE Standard Module Series 3.17. ADC Interfaces EG915N-EU provides two Analog-to-digital conversion interfaces. AT+QADC=0 can be used to read the voltage value on ADC0. AT+QADC=1 can be used to read the voltage value on ADC1. For more details about these AT commands, see document [2]. EG915N-LA does not support ADC function. To improve the accuracy of ADC, surround the trace of ADC with ground. Table 22: Pin Definition of ADC Interfaces Pin Name Pin No.
LTE Standard Module Series 3.18. MAIN_RI Send AT+QCFG="risignaltype","physical" so that no matter on which port a URC is presented, the URC will trigger the behaviors of MAIN_RI pin. NOTE AT+QURCCFG allows you to set the main UART, USB AT port or USB modem port as the URC output port. The USB AT port is the URC output port by default. You can configure RI behaviors flexibly. The default behavior of the MAIN_RI is shown as below.
LTE Standard Module Series 4 GNSS 4.1. General Description GNSS function is optional for the module. Only the module with built-in GNSS function integrates a multi-constellation GNSS receiver and supports GPS, GLONASS, Galileo, BDS, QZSS and SBAS positioning system. It also supports standard NMEA 0183 protocol and outputs NMEA sentences at 1 Hz data update rate via USB interface by default. The GNSS engine is turned off by default and can be turned on through AT commands.
LTE Standard Module Series 2. 3. Reacquisition sensitivity: the minimum GNSS signal power required for the module to maintain lock within 3 minutes after loss of lock. Acquisition sensitivity: the minimum GNSS signal power at which the module can fix position successfully within 3 minutes after executing cold start command. 4.3.
LTE Standard Module Series 5 Antenna Interfaces The module includes one main antenna interface. The module with built-in GNSS function also has one GNSS antenna interface. The impedance of antenna port is 50 Ω. 5.1. Main Antenna Interface & Frequency Bands 5.1.1. Pin Definition Table 26: Pin Definition of Main Antenna Pin Name Pin No. I/O Description Comment ANT_MAIN 60 AIO Main antenna interface 50 Ω impedance. 5.1.2.
LTE Standard Module Series Table 28: EG915N-LA Operating Frequency 3GPP Band Transmit Receive Unit GSM850 824-849 869-894 MHz EGSM900 880–915 925–960 MHz DCS1800 1710–1785 1805–1880 MHz PCS1900 1850-1910 1930-1990 MHz LTE-FDD B2 1850-1910 1930-1990 MHz LTE-FDD B3 1710–1785 1805–1880 MHz LTE-FDD B4 1710-1755 2110-2155 MHz LTE-FDD B5 824–849 869–894 MHz LTE-FDD B7 2500–2570 2620–2690 MHz LTE-FDD B8 880–915 925–960 MHz LTE-FDD B28 703–748 758–803 MHz LTE-FDD B66
LTE Standard Module Series NOTE Place the π-type matching components (R1, C1 and C2) as close to the antenna as possible. 5.1.4. RF Routing Guidelines For user’s PCB, the characteristic impedance of all RF traces should be controlled to 50 Ω. The impedance of the RF traces is usually determined by the trace width (W), the materials’ dielectric constant, the height from the reference ground to the signal layer (H), and the spacing between RF traces and grounds (S).
LTE Standard Module Series Figure 34: Coplanar Waveguide Design on a 4-layer PCB (Layer 3 as Reference Ground) Figure 35: Coplanar Waveguide Design on a 4-layer PCB (Layer 4 as Reference Ground) To ensure RF performance and reliability, follow the principles below in RF layout design: Use an impedance simulation tool to accurately control the characteristic impedance of RF traces to 50 Ω.
LTE Standard Module Series For more details about RF layout, see document [4]. 5.2. GNSS Antenna Interface & Frequency Bands The following tables list the pin definition and frequency characteristics of the GNSS antenna interface. Table 29: GNSS Antenna Pin Definition Pin Name Pin No. I/O Description Comment ANT_GNSS 49 AI GNSS antenna interface 50 Ω impedance. If unused, keep it open. Table 30: GNSS Frequency Type Frequency Unit GPS 1575.42 ±1.023 MHz GLONASS 1597.5–1605.
LTE Standard Module Series 5.2.1. GNSS Antenna Reference Design 5.2.1.1. Reference Circuit Design for GNSS Active Antenna GNSS active antenna connection reference circuit is shown in the figure below. VDD 0.1 µF 10 Ω GNSS Antenna Module 47 nH 0Ω 100 pF ANT_GNSS NM NM ESD Protection Component Figure 36: GNSS Active Antenna Reference Circuit The power supply voltage range of the external active antenna is 2.8–4.3 V, and the typical value is 3.3 V. NOTE 1.
LTE Standard Module Series 5.2.1.2. Reference Circuit Design for GNSS Passive Antenna GNSS passive antenna connection reference circuit is shown in the figure below. GNSS Antenna Module R1 0Ω ANT_GNSS C1 C2 NM NM ESD Protection Component Figure 37: GNSS Passive Antenna Reference Circuit C1, R1 and C2 form the matching circuit, which is recommended to be reserved for adjusting the antenna impedance. Among them, C1 and C2 are not mounted by default, and R1 is only mounted with 0 Ω resistor.
LTE Standard Module Series Cable insertion loss: < 1 dB: LB (< 1 GHz) < 1.5 dB: MB (1–2.3 GHz) < 2 dB: HB (> 2.3 GHz) GNSS Frequency range: L1:1559–1609 MHz Polarization: RHCP or linear VSWR: < 2 Passive antenna gain: > 0 dBi Active antenna noise factor: < 1.5 dB Active antenna gain: > -2 dBi Active antenna internal LNA gain: < 17 dB Active antenna total gain: < 17 dBi 5.3.2. RF Connector Recommendation If RF connector is used for antenna connection, it is recommended to use U.
LTE Standard Module Series U.FL-LP series connectors listed in the following figure can be used to match the U.FL-R-SMT. Figure 39: Specifications of Mated Plugs The following figure describes the space factor of mated connector. Figure 40: Space Factor of Mated Connectors (Unit: mm) For more details, please visit http://hirose.com.
LTE Standard Module Series 6 Reliability, Radio and Electrical Characteristics 6.1. Absolute Maximum Ratings Absolute maximum ratings for power supply and voltage on digital and analog pins of the module are listed in the following table. Table 32: Absolute Maximum Ratings Parameter Min. Max. Unit VBAT_BB -0.3 6.0 V VBAT_RF -0.3 6.0 V USB_VBUS -0.3 5.5 V Peak Current of VBAT_BB - 0.8 A Peak Current of VBAT_RF - 2.2 A Voltage at Digital Pins -0.3 2.3 V 6.2.
LTE Standard Module Series values. Voltage drop during burst transmission Maximum power control level on EGSM900. - - 400 mV IVBAT Peak supply current (during transmission slot) Maximum power control level on EGSM900. - 2.0 2.5 A USB_VBUS USB connection detect 3.0 5.0 5.25 V 6.3. Digital I/O Characteristics Table 34: 1.8 V Digital I/O Requirements Parameter Description Min. Max. Unit VIH Input high voltage 1.2 2.0 V VIL Input low voltage -0.3 0.
LTE Standard Module Series Table 36: (U)SIM 3.0 V I/O Requirements Parameter Description Min. Max. Unit USIM_VDD Power supply 2.7 3.05 V VIH Input high voltage 1.95 - V VIL Input low voltage - 1 V VOH Output high voltage 2.55 - V VOL Output low voltage - 0.45 V 6.4. Operating and Storage Temperatures Table 37: Operating and Storage Temperatures Parameter Operating Temperature Range Extended Operation Range 4 5 Storage Temperature Range Min. Typ. Max.
LTE Standard Module Series AT+CFUN=0 (USB disconnected) 1.33 mA EGSM900 @ DRX = 2 (USB disconnected) 2.35 mA EGSM900 @ DRX = 5 (USB disconnected) 1.53 mA EGSM900 @ DRX = 5 (USB suspend) 2.00 mA EGSM900 @ DRX = 9 (USB disconnected) 1.71 mA DCS1800 @ DRX = 2 (USB disconnected) 2.38 mA DCS1800 @ DRX = 5 (USB disconnected) 1.88 mA DCS1800 @ DRX = 5 (USB suspend) 2.00 mA DCS1800 @ DRX = 9 (USB disconnected) 1.70 mA LTE-FDD @ PF = 32 (USB disconnected) 1.
LTE Standard Module Series EDGE data transmission LTE data transmission DCS1800 1DL/4UL @ 25.76 dBm 330 mA EGSM900 4DL/1UL @ 26.83 dBm 145 mA EGSM900 3DL/2UL @ 26.00 dBm 233 mA EGSM900 2DL/3UL @ 24.96 dBm 284 mA EGSM900 1DL/4UL @ 23.26 dBm 320 mA DCS1800 4DL/1UL @ 24.65 dBm 124 mA DCS1800 3DL/2UL @ 24.52 dBm 193 mA DCS1800 2DL/3UL @ 23.26 dBm 247 mA DCS1800 1DL/4UL @ 20.
LTE Standard Module Series EGSM900 @ DRX = 2 (USB disconnected) 1.80 mA EGSM900 @ DRX = 5 (USB disconnected) 1.38 mA EGSM900 @ DRX = 5 (USB suspend) 1.46 mA EGSM900 @ DRX = 9 (USB disconnected) 1.17 mA DCS1800 @ DRX = 2 (USB disconnected) 1.82 mA DCS1800 @ DRX = 5 (USB disconnected) 1.33 mA DCS1800 @ DRX = 5 (USB suspend) 1.48 mA DCS1800 @ DRX = 9 (USB disconnected) 1.18 mA LTE-FDD @ PF = 32 (USB disconnected) 1.71 mA LTE-FDD @ PF = 64 (USB disconnected) 1.
LTE Standard Module Series EDGE data transmission LTE data DCS1800 4DL/1UL @ 29.94 dBm 167 mA DCS1800 3DL/2UL @ 29.83 dBm 296 mA DCS1800 2DL/3UL @ 28.35 dBm 355 mA DCS1800 1DL/4UL @ 26.37 dBm 382 mA PCS1900 4DL/1UL @ 29.89 dBm 153 mA PCS1900 3DL/2UL @ 29.78 dBm 278 mA PCS1900 2DL/3UL @ 28.44 dBm 338 mA PCS1900 1DL/4UL @ 26.45 dBm 364 mA GSM850 4DL/1UL @ 26.50 dBm 135 mA GSM850 3DL/2UL @ 26.33 dBm 236 mA GSM850 2DL/3UL @ 25.04 dBm 293 mA GSM850 1DL/4UL @ 23.
LTE Standard Module Series transmission LTE-FDD B3 617 mA LTE-FDD B4 500 mA LTE-FDD B5 490 mA LTE-FDD B7 543 mA LTE-FDD B8 486 mA LTE-FDD B28 485 mA LTE-FDD B66 497 mA GSM850 PCL = 5 @ 32.48 dBm 235 mA GSM850 PCL = 12 @ 19.36 dBm 96 mA GSM850 PCL = 19 @ 5.06 dBm 63 Ma EGSM900 PCL = 5 @ 32.03 dBm 227 mA EGSM900 PCL = 12 @ 19.34 dBm 93 mA EGSM900 PCL = 19 @ 4.33 dBm 60 mA DCS1800 PCL = 0 @ 29.91 dBm 171 mA DCS1800 PCL = 7 @ 17.27 dBm 81 mA DCS1800 PCL = 15 @ 1.
LTE Standard Module Series 6.6. Rx Sensitivity The following tables show conducted RF receiving sensitivity of the module. Table 40: EG915N-EU Conducted RF Receiving Sensitivity Receiving Sensitivity (Typ.) Frequency Bands 3GPP (SIMO) Primary Diversity SIMO EGSM900 -109 dBm - - -102 dBm DCS1800 -104 dBm - - -102 dBm LTE-FDD B1 (10 MHz) -98 dBm - - -96.3 dBm LTE-FDD B3 (10 MHz) -98 dBm - - -93.3 dBm LTE-FDD B7 (10 MHz) -97 dBm - - -94.
LTE Standard Module Series LTE-FDD B7 (10 MHz) -97 dBm - - -94.3 dBm LTE-FDD B8 (10 MHz) -99 dBm - - -93.3 dBm LTE-FDD B28 (10 MHz) -99 dBm - - -94.8 dBm LTE-FDD B66 (10 MHz) -99 dBm - - -96.5 dBm 6.7. ESD Protection Static electricity occurs naturally and it may damage the module. Therefore, applying proper ESD countermeasures and handling methods is imperative.
LTE Standard Module Series 7 Mechanical Information This chapter describes the mechanical dimensions of the module. All dimensions are measured in millimeter (mm), and the dimensional tolerances are ±0.2 mm unless otherwise specified. 7.1.
LTE Standard Module Series Figure 42: Bottom Dimensions (Bottom View) NOTE The package warpage level of the module conforms to JEITA ED-7306 standard.
LTE Standard Module Series 7.2. Recommended Footprint Figure 43: Recommended Footprint (Top View) NOTE Keep at least 3 mm between the module and other components on the motherboard to improve soldering quality and maintenance convenience.
LTE Standard Module Series 7.3. Tx Power The following tables show the RF output power of the module. Table 43: EG915N-EU RF Output Power Frequency Bands Max. RF Output Power Min. RF Output Power EGSM900 33 dBm ±2 dB 5 dBm ±5 dB DCS1800 30 dBm ±2 dB 0 dBm ±5 dB EGSM900 (8-PSK) 27 dBm ±3 dB 5 dBm ±5 dB DCS1800 (8-PSK) 26 dBm ±3 dB 0 dBm ±5 dB LTE-FDD B1/B3/B7/B8/B20 23 dBm ±2 dB < -39 dBm Frequency Bands Max. RF Output Power Min.
LTE Standard Module Series GSM specification as described in Chapter 13.16 of 3GPP TS 51.010-1. 7.4. Top and Bottom Views Figure 44: Top View and Bottom View of the Module NOTE Images above are for illustration purpose only and may differ from the actual module. For authentic appearance and label, please refer to the module received from Quectel.
LTE Standard Module Series 8 Storage, Manufacturing and Packaging 8.1. Storage Conditions The module is provided with vacuum-sealed packaging. MSL of the module is rated as 3. The storage requirements are shown below. 1. Recommended Storage Condition: The temperature should be 23 ±5 °C and the relative humidity should be 35–60 %. 2. The storage life (in vacuum-sealed packaging): 12 months in Recommended Storage Condition. 3.
LTE Standard Module Series NOTE 1. To avoid blistering, layer separation and other soldering issues, extended exposure of the module to the air is forbidden. 2. Take out the module from the package and put it on high-temperature-resistant fixtures before baking. If shorter baking time is desired, see IPC/JEDEC J-STD-033 for the baking procedure. 3. Pay attention to ESD protection, such as wearing anti-static gloves, when touching the modules. 8.2.
LTE Standard Module Series Table 45: Recommended Thermal Profile Parameters Factor Recommendation Soak Zone Max slope 1–3 °C/s Soak time (between A and B: 150 °C and 200 °C) 70–120 s Reflow Zone Max slope 1–3 °C/s Reflow time (D: over 217 °C) 40–70 s Max temperature 235 °C to 246 °C Cooling down slope -1.5 to -3 °C/s Reflow Cycle Max reflow cycle 1 NOTE 1.
LTE Standard Module Series 8.3. Packaging Specifications This chapter describes only the key parameters and process of packaging. All figures below are for reference only. The appearance and structure of the packaging materials are subject to the actual delivery. The module adopts carrier tape packaging and details are as follow: 8.3.1.
LTE Standard Module Series 8.3.2. Plastic Reel Figure 47: Plastic Reel Dimension Drawing Table 47: Plastic Reel Dimension Table (Unit: mm) øD1 øD2 W 330 100 44.
LTE Standard Module Series 8.3.3. Packaging Process Place the module into the carrier tape and use the cover tape to cover them; then wind the heat-sealed carrier tape to the plastic reel and use the protective tape for protection. One plastic reel can load 250 modules. Place the packaged plastic reel, humidity indicator card and desiccant bag into a vacuum bag, then vacuumize it. Place the vacuum-packed plastic reel into a pizza box. Put 4 pizza boxes into 1 carton and seal it.
LTE Standard Module Series 9 Appendix References Table 48: Related Documents Document Name [1] Quectel_UMTS<E_EVB_User_Guide [2] Quectel_EC200x&EG912Y&EG915N_Series_AT_Commands_Manual [3] Quectel_EC200x&EG912Y&EG915N_Series_Audio_Application_Note [4] Quectel_RF_Layout_Application_Note [5] Quectel_Module_Secondary_SMT_Application_Note Table 49: Terms and Abbreviations Abbreviation Description 3GPP 3rd Generation Partnership Project ADC Analog-to-Digital Converter AMR Adaptive Multi-rate EG915N
LTE Standard Module Series BB Baseband BDS BeiDou Navigation Satellite System bps Bits Per Second CEP Circular Error Probable CHAP Challenge Handshake Authentication Protocol CMUX Connection MUX CS Coding Scheme CTS Clear To Send DCE Data Communications Equipment DCS Data Coding Scheme DFOTA Delta Firmware Upgrade Over-The-Air DL Downlink DTE Data Terminal Equipment DTR Data Terminal Ready EDGE Enhanced Data Rates for GSM Evolution EFR Enhanced Full Rate EGSM Enhanced GSM
LTE Standard Module Series FTP File Transfer Protocol FTPS FTP over SSL Galileo Galileo Satellite Navigation System (EU) GLONASS Global Navigation Satellite System (Russia) GMSK Gaussian Minimum Shift Keying GNSS Global Navigation Satellite System GPIO General-Purpose Input/Output GPRS General Packet Radio Service GPS Global Positioning System GSM Global System for Mobile Communications HR Half Rate HTTP Hyper Text Transfer Protocol HTTPS Hyper Text Transfer Protocol over Secure So
LTE Standard Module Series MIC Microphone MLCC Multi-layer Ceramic Capacitor MMS Multimedia Messaging Service MO Mobile Origination MQTT Message Queuing Telemetry Transport MSL Moisture Sensitivity Level MT Mobile Terminating NITZ Network Identity and Time Zone NMEA (National Marine Electronics Association)0183 Interface Standard NTP Network Time Protocol PA Power Amplifier PAM Power Amplifier Module PAP Password Authentication Protocol PC Personal Computer PCB Printed Circuit
LTE Standard Module Series QZSS Quasi-Zenith Satellite System RAM Random Access Memory RHCP Right Hand Circular Polarization RF Radio Frequency RoHS Restriction of Hazardous Substances RTS Request to Send SAW Surface Acoustic Wave SBAS Satellite-Based Augmentation System SIM Subscriber Identity Module SIMO Single Input Multiple Output SMD Surface Mount Device SMS Short Message Service SMT Surface Mount Technology SMTP Simple Mail Transfer Protocol SMTPS Simple Mail Transfer Pro
LTE Standard Module Series USB Universal Serial Bus (U)SIM (Universal) Subscriber Identity Module VBAT Voltage at Battery (Pin) VIH High-level Input Voltage VIL Low-level Input Voltage Vmax Maximum Voltage Vmin Minimum Voltage Vnom Nominal Voltage VOH High-level Output Voltage VOL Low-level Output Voltage VSWR Voltage Standing Wave Ratio EG915N_Series_Hardware_Design 92 / 92