EG915U Series Hardware Design LTE Standard Module Series Version: 1.
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LTE Standard Module Series Trademarks Except as otherwise set forth herein, nothing in this document shall be construed as conferring any rights to use any trademark, trade name or name, abbreviation, or counterfeit product thereof owned by Quectel or any third party in advertising, publicity, or other aspects. Third-Party Rights This document may refer to hardware, software and/or documentation owned by one or more third parties (“third-party materials”).
LTE Standard Module Series Safety Information The following safety precautions must be observed during all phases of operation, such as usage, service or repair of any cellular terminal or mobile incorporating the module. Manufacturers of the cellular terminal should notify users and operating personnel of the following safety information by incorporating these guidelines into all manuals of the product. Otherwise, Quectel assumes no liability for customers’ failure to comply with these precautions.
LTE Standard Module Series About the Document Revision History Version Date Author Description - 2021-12-20 Len CHEN/ Manimo YANG/ Ailsa WANG/Yunsheng LI Creation of the document 1.
LTE Standard Module Series Contents Safety Information ....................................................................................................................................... 3 About the Document ................................................................................................................................... 4 Contents .......................................................................................................................................................
LTE Standard Module Series 4.1.3. Receiver Interface Design .............................................................................................. 41 4.2. USB Interface .......................................................................................................................... 42 4.3. USB_BOOT Interface .............................................................................................................. 44 4.4. (U)SIM Interfaces ...............................................
LTE Standard Module Series Table Index Table 1: Special Mark ..................................................................................................................................11 Table 2: Brief Introduction of the Module ................................................................................................... 12 Table 3: Frequency Bands .........................................................................................................................
LTE Standard Module Series Table 42: EG915U-CN Conducted RF Receiving Sensitivity..................................................................... 74 Table 43: EG915U-EU Conducted RF Receiving Sensitivity ..................................................................... 74 Table 44: EG915U-LA Conducted RF Receiving Sensitivity...................................................................... 75 Table 45: Electrostatics Discharge Characteristics (25 °C, 45 % Relative Humidity) ..................
LTE Standard Module Series Figure Index Figure 1: Functional Diagram ..................................................................................................................... 16 Figure 2: Pin Assignment (Top View) ......................................................................................................... 17 Figure 3: Sleep Mode Application via UART ..............................................................................................
LTE Standard Module Series Figure 42: Plastic Reel Dimension Drawing .............................................................................................. 85 Figure 43: Packaging Process ...................................................................................................................
LTE Standard Module Series 1 Introduction This document defines the EG915U series module and describes its air interfaces and hardware interfaces which relate to customers’ applications. It can help customers quickly understand interface specifications, electrical and mechanical details, as well as other related information of the module. Associated with application notes and user guides, customers can use this module to design and to set up mobile applications easily. 1.1.
LTE Standard Module Series 2 Product Overview EG915U series module is an LTE-FDD, LTE-TDD, and GSM wireless communication module, which provides data connectivity on LTE-FDD, LTE-TDD, and GPRS networks. It also provides voice functionality, Bluetooth and Wi-Fi Scan 1 to meet your specific application demands. Related information and details are listed in the table below: Table 2: Brief Introduction of the Module Categories Packaging and Number of Pins LGA; 126-pin Dimensions (23.6 ±0.2) mm × (19.
LTE Standard Module Series Bluetooth and Wi-Fi Scan 1 2.4 GHz 2.4 GHz 2.4 GHz 2.2. Key Features The following table describes the detailed features of EG915U series module.
LTE Standard Module Series ⚫ FTPS/SSL/FILE/MQTT/MMS protocols Supports PAP and CHAP protocols, which are usually used for PPP connection SMS ⚫ ⚫ ⚫ ⚫ Text and PDU modes Point-to-point MO and MT SMS cell broadcast SMS storage: (U)SIM card and ME; ME by default (U)SIM Interfaces ⚫ Supports USIM/SIM card: 1.8/3.0 V ⚫ Compliant with USB 2.
LTE Standard Module Series Temperature Range ⚫ ⚫ ⚫ Operating temperature range: -35 to +75 °C 3 Extended temperature range: -40 to +85 °C 4 Storage temperature range: -40 to +90 °C Firmware Upgrade ⚫ Via USB interface and DFOTA RoHS ⚫ All hardware components are fully compliant with EU RoHS Directive 2.3. Functional Diagram The following figure shows a block diagram of the module and illustrates the major functional parts.
LTE Standard Module Series 2.4. Pin Assignment GND 50 51 RESERVED 52 VBAT_RF 53 VBAT_RF 54 GND 55 GND 56 1 ANT_BT/WIFI_SCAN 57 RESERVED 58 GND GND 59 60 ANT_MAIN GND 61 GND 62 The following figure illustrates the pin assignment of the module.
LTE Standard Module Series evaluate whether the unstable output state on power-up meets your application design requirements based on the specific usage scenario and circuit design. 2.5. Pin Description The following tables show the pin definition of the module.
LTE Standard Module Series 29 PO Provides 1.8 V for external circuit Vnom = 1.8 V IOmax = 50 mA Power supply for external GPIO’s pull-up circuits. Used with a 2.2 μF bypass capacitor. If unused, keep it open. Pin Name Pin No. I/O Description DC Characteristics Comment PWRKEY 15 DI Turns on/off the module VBAT power domain. DI Resets the module VBAT power domain. Active low. If unused, keep it open. I/O Description VDD_EXT Power On/Off VILmax = 0.
LTE Standard Module Series (U)SIM Interface Pin Name Pin No. I/O Description DC Characteristics Comment IOmax = 50 mA USIM1_VDD 43 PO (U)SIM1 card power supply 1.8 V (U)SIM: Vmax = 1.9 V Vmin = 1.7 V 3.0 V (U)SIM: Vmax = 3.05 V Vmin = 2.7 V Either 1.8 V or 3.0 V (U)SIM card is supported and can be identified automatically by the module. 1.8 V (U)SIM: VILmax = 0.6 V VIHmin = 1.26 V VOLmax = 0.45 V VOHmin = 1.35 V USIM1_DATA 45 DIO (U)SIM1 card data 3.0 V (U)SIM: VILmax = 1.0 V VIHmin = 1.
LTE Standard Module Series Iomax = 50 mA USIM2_VDD 87 PO (U)SIM2 card power supply 1.8 V (U)SIM: Vmax = 1.9 V Vmin = 1.7 V 3.0 V (U)SIM: Vmax = 3.05 V Vmin = 2.7 V Either 1.8 V or 3.0 V (U)SIM card is supported and can be identified automatically by the module. 1.8 V (U)SIM: VILmax = 0.6 V VIHmin = 1.26 V VOLmax = 0.45 V VOHmin = 1.35 V USIM2_DATA 86 DIO (U)SIM2 card data 3.0 V (U)SIM: VILmax = 1.0 V VIHmin = 1.95 V VOLmax = 0.45 V VOHmin = 2.55 V 1.8 V (U)SIM: VOLmax = 0.45 V VOHmin = 1.
LTE Standard Module Series MAIN_RTS 37 DI DTE request to send signal to DCE (connect to DTE’s RTS) VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.0 V them open. MAIN_RXD 34 DI Main UART receive VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.0 V MAIN_DCD 38 DO Main UART data carrier detect VOLmax = 0.45 V VOHmin = 1.35 V MAIN_TXD 35 DO Main UART transmit VOLmax = 0.45 V VOHmin = 1.35 V MAIN_RI 39 DO Main UART ring indication VOLmax = 0.45 V VOHmin = 1.
LTE Standard Module Series I2C_SDA resistor is required. 1.8 V power domain only. If unused, keep them open. 41 OD I2C serial data Pin No. I/O Description DC Characteristics PCM data frame sync VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.0 V PCM clock VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.0 V PCM Interface Pin Name PCM_SYNC PCM_CLK 5 4 DI DI PCM_DIN 6 DI PCM data input VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.
LTE Standard Module Series SPI_CS 25 DO SPI chip select VOLmax = 0.45 V VOHmin = 1.35 V If unused, keep them open. SPI_DIN 88 DI SPI master mode input VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.0 V SPI_DOUT 64 DO SPI master mode output VOLmax = 0.45 V VOHmin = 1.35 V Pin Name Pin No. I/O Description DC Characteristics Comment ADC0 24 AI ADC1 2 AI General-purpose ADC interfaces Voltage range: 0.1 V to VBAT If unused, keep them open.
LTE Standard Module Series Pin Name Pin No. I/O Description PSM_IND 1 DO Indicates the module’s power saving mode. 96 DI External interrupt pin. Wakes up the module from PSM. Pin No. I/O Description PSM_EINT DC Characteristics Comment Other Interfaces Pin Name W_DISABLE# AP_READY 18 19 DI DI DC Characteristics Comment Airplane mode control VILmin = -0.3 V VILmax = 0.6 V VIHmin = 1.26 V VIHmax = 2.0 V 1.8 V power domain. Pulled up by default.
LTE Standard Module Series requirements based on the specific usage scenario and circuit design. 2.6. EVB To help customers develop applications with EG915U series module. Quectel provides an evaluation board (UMTS<E EVB), USB to RS-232 converter cable, earphone, antennas and other peripherals to control or test the module. For more details, please refer to document [1].
LTE Standard Module Series 3 Operating Characteristics 3.1. Operating Modes The following table briefly outlines the operating modes referred in the following chapters. Table 7: Overview of Operating Modes Mode Details Idle Software is active. The module remains registered on the network and is ready to send and receive data. Talk/Data Network connection is ongoing. In this mode, the power consumption is decided by network setting and data transfer rate.
LTE Standard Module Series following chapters describe power saving procedures of the module. 3.2.1 UART Application Scenario If the host communicates with module via UART interface, the following preconditions should be met to make the module enter sleep mode. ⚫ ⚫ Execute AT+QSCLK=1 to enable sleep mode. Drive MAIN_DTR to high level. The following figure shows the connection between the module and the host.
LTE Standard Module Series 3.2.2. USB Application Scenario 3.2.2.1. USB Application with USB Remote Wakeup Function If the host supports USB suspend/resume and remote wakeup function, three preconditions must be met to make the module enter the sleep mode: ⚫ ⚫ ⚫ Execute AT+QSCLK=1 command to enable the sleep mode. Ensure the MAIN_DTR is held at a high level or keep it open. Ensure the host’s USB bus, which is connected with the module’s USB interface, enters suspend state.
LTE Standard Module Series In this case, three preconditions can make the module enter the sleep mode. ⚫ ⚫ ⚫ Execute AT+QSCLK=1 to enable sleep mode. Ensure the MAIN_DTR is held at high level or keep it open. Ensure the host’s USB bus, which is connected with the module’s USB interface, enters suspend state. The following figure illustrates the connection between the module and the host.
LTE Standard Module Series Module Host GPIO USB_VBUS Power Switch VDD USB_DP USB_DP USB_DM USB_DM MAIN_RI EINT AP_READY GPIO GND GND Figure 6: Sleep Mode Application without Suspend Function You can wake up the module by turning on the power switch to supply power to USB_VBUS. NOTE 1. 2. Please pay attention to the level match shown in dotted line between the module and the host.
LTE Standard Module Series NOTE When using W_DISABLE# (pin 18), please note that it will have a period of variable level state (not controllable by software) after the module is powered on: first high level (3 V) for 2 s and then low level (0 V) for 1.2 s, before it can be configured as 1.8 V input or output. Please evaluate whether the unstable output state on power-up meets your application design requirements based on the specific usage scenario and circuit design. 3.3.2.
LTE Standard Module Series GND 3, 31, 48, 50, 54, 55, 58–62, 67–74, 79–82, 89–91, 100–102 3.4.2. Reference Design for Power Supply The power design for the module is very important, as the performance of the module largely depends on the power source. The power supply of the module should be able to provide sufficient current of 3.0 A at least. If the voltage drops between input and output is not too high, it is suggested that an LDO should be used to supply power to the module.
LTE Standard Module Series Burst Transmission Burst Transmission VBAT Ripple Drop Figure 8: Power Supply Limits during Burst Transmission To decrease the voltage drop, use bypass capacitors of about 100 µF with low ESR (ESR = 0.7 Ω) and reserve a multi-layer ceramic chip (MLCC) capacitor array due to their ultra-low ESR. It is recommended to use three ceramic capacitors (100 nF, 33 pF, 10 pF) for composing the MLCC array, and place these capacitors close to the VBAT_BB and VBAT_RF pins.
LTE Standard Module Series 3.5. Turn On 3.5.1. Turn On with PWPKEY Table 9: Pin Definition of PWRKEY Pin Name Pin No. I/O Description Comment PWRKEY 15 DI Turns on/off the module VBAT power domain. When the module is in power down mode, you can turn it on to normal mode by driving the PWRKEY pin low for at least 2 s. It is recommended to use an open drain/collector driver to control the PWRKEY. A simple reference circuit is illustrated in the following figure. PWRKEY 2s 4.
LTE Standard Module Series The power-up scenario is illustrated in the following figure. NOTE 1 2s VBAT PWRKEY VIL 0.5 V About 1.15 s VDD_EXT RESET_N 4s UART Inactive Active 2.23 s USB I nactive Active Figure 12: Power-up Timing . NOTE 1. Make sure that the VBAT is stable before pulling down PWRKEY pin. It is recommended that the time difference between powering up VBAT and pulling down PWRKEY pin is no less than 30 ms. 2.
LTE Standard Module Series 3.6.1. Turn Off with PWPKEY Drive the PWRKEY pin low for at least 3 s and then release PWRKEY. After this, the module executes power-down procedure. The power-down scenario is illustrated in the following figure. VBA T 3s 30 s PWRKEY Module Status Running Power-down procedure OFF Figure 13: Timing of Turning off the Module 3.6.2.
LTE Standard Module Series 3.7. Reset The RESET_N pin can be used to reset the module. The module can be reset by driving the RESET_N pin low for at least 100 ms and then releasing it. The RESET_N signal is sensitive to interference, so it is recommended to route the trace as short as possible and surround it with ground. Table 10: Pin Description of RESET_N Pin Name Pin No. I/O Description Comment RESET_N 17 DI Resets the module VBAT power domain. If unused, keep it open.
LTE Standard Module Series The reset scenario is illustrated in the following figure. VBAT 100 ms RESET_N VIL Module Status Running 0.5 V Baseband resetting Baseband restart Figure 16: Timing of Resetting the Module ⚫ NOTE 1. 2. Ensure that there is no large capacitance exceeding 10 nF on PWRKEY and RESET_N pins. It is recommended to use RESET_N only when you fail to turn off the module with the AT+QPOWD or PWRKEY pin.
LTE Standard Module Series 4 Application Interfaces 4.1. Analog Audio Interfaces The module provides one analog audio input channel and one analog audio output channel. The pin definitions are shown in the following table. Table 11: Pin Definition of Analog Audio Interfaces Pin Name Pin No.
LTE Standard Module Series as possible, and the traces should be as short as possible. They should go through the filter capacitors before arriving at other connection points. To reduce radio or other signal interference, RF antennas should be placed away from audio interfaces and audio traces. Power traces should not be parallel with and also should be far away from the audio traces. The differential audio traces must be routed according to the differential signal layout rule. 4.1.2.
LTE Standard Module Series Close to Rec eiv er Differential layout TVS 33 pF 0R 0R SPK_P Module NF SPK_N 0R 10 pF 0R 33 pF TVS 0603 Figure 18: Reference Design for Receiver Interface 4.2. USB Interface The module provides an integrated Universal Serial Bus (USB) interface compliant with the USB 2.0 specification and supporting full-speed (12 Mbps) and high-speed (480 Mbps) modes. The USB interface can only serve as a slave device.
LTE Standard Module Series Table 13: Pin Definition of USB Interface Pin Name Pin No. I/O Description Comment USB_VBUS 8 AI USB connection detect Typ. 5.0 V Min. 3.5 V USB_DP 9 AIO USB differential data (+) USB_DM 10 AIO USB differential data (-) USB 2.0 compliant. Requires differential impedance of 90 Ω. If unused, keep them open. For more details about the USB 2.0 specifications, visit http://www.usb.org/home. Reserve test points for debugging and firmware upgrade in your design.
LTE Standard Module Series ⚫ that layer and ground planes above and below. Pay attention to the selection of the ESD component on the USB data line. Its stray capacitance should not exceed 2 pF and should be placed as close as possible to the USB connector. 4.3. USB_BOOT Interface The module provides a USB_BOOT interface. Pull up USB_BOOT to VDD_EXT before powering on the module, which will enter the download mode when it is turned on.
LTE Standard Module Series 4.4. (U)SIM Interfaces The module provides 2 (U)SIM interfaces that supports Dual SIM Single Standby. The (U)SIM interfaces circuitry meets ETSI requirement and IMT-2000 specification. Either 1.8 V or 3.0 V (U)SIM card is supported. Table 15: Pin Definition of (U)SIM Interfaces Pin Name Pin No. I/O Description Comment Either 1.8 V or 3.0 V (U)SIM card is supported and can be identified automatically by the module.
LTE Standard Module Series VDD_EXT USIM_VDD 51K 15K 100 nF GND (U)SIM Card Connector USIM_VDD Module USIM_CLK USIM1_DET VCC RST 0R USIM_RST 0R CLK GND VPP Switch IO 0R USIM_DATA 33 pF GND 33 pF 33 pF GND GND Figure 21: Reference Circuit of (U)SIM Interface with an 8-pin (U)SIM Card Connector If (U)SIM card detection function is not needed, please keep USIM1_DET unconnected.
LTE Standard Module Series ⚫ ⚫ shield them with surrounded ground. To offer good ESD protection, it is recommended to add a TVS diode array of which the parasitic capacitance should be less than 15 pF. Add 0 Ω resistors in series between the module and the (U)SIM card to facilitate debugging. The 33 pF capacitors are used for filtering interference of GSM900. Additionally, keep the (U)SI M peripheral circuit close to the (U)SIM card connector.
LTE Standard Module Series NM 0R External 26MHz Crystal MICBIAS 0R PCM_CLK INP INN BCLK PCM_SYNC LRCK PCM_DOUT DAC PCM_DIN ADC I2C_SCL SCL I2C_SDA SDA BIAS MCLK CAM_MCLK Module 4.7K 4.7K LOUTP LOUTN Codec 1.8 V Figure 23: Reference Circuit of I2C and PCM Application with Audio Codec NOTE 1. It is recommended to reserve an RC (R = 22 Ω, C = 22 pF) circuit on the PCM traces, especially for PCM_CLK. 2.
LTE Standard Module Series Table 17: Pin Definition of Main UART Interface Pin Name Pin No. I/O Description Comment MAIN_CTS 36 DO DTE clear to send signal to DCE (connect to DTE’s CTS) MAIN_RTS 37 DI DTE request to send signal to DCE (connect to DTE’s RTS) MAIN_RXD 34 DI Main UART receive MAIN_DCD 38 DO Main UART data carrier detect MAIN_TXD 35 DO Main UART transmit MAIN_RI 39 DO Main UART ring indication MAIN_DTR 30 DI Main UART data terminal ready 1.8 V power domain.
LTE Standard Module Series VDD_EXT VCCA 120K VCCB 10K 0.1 μF OE 0.1 μF VDD_MCU GND MAIN_RI A1 B1 RI_MCU MAIN_DCD A2 B2 DCD_MCU MAIN_CTS A3 MAIN_RTS A4 B4 RTS_MCU Connect to the RTS of MCU MAIN_DTR A5 B5 DTR_MCU MAIN_TXD A6 B6 RXD_MCU Connect to the RXD of MCU MAIN_RXD A7 B7 TXD_MCU Connect to the TXD of MCU A8 B8 51K Translator B3 CTS_MCU Connect to the CTS of MCU 51K Figure 24: Reference Circuit with Translator Chip Please visit http://www.ti.
LTE Standard Module Series then low level (0 V) for 1.2 s, before they can be configured as 1.8 V input or output. Please evaluate whether the unstable output state on power-up meets your application design requirements based on the specific usage scenario and circuit design. 4.7. ADC Interfaces The module provides two analog-to-digital converter (ADC) interfaces. You can use AT+QADC=0 and AT+QADC=1 to read the voltage values on ADC0 and ADC1 respectively. See document [2] for more details.
LTE Standard Module Series 4.8. SPI Interface The module provides an SPI interface that only supports master mode. It has a working voltage of 1.8 V and a maximum clock frequency of 25 MHz. Table 22: Pin Definition of SPI Interface Pin Name Pin No. I/O Description SPI_CLK 26 DO SPI clock SPI_CS 25 DO SPI chip select SPI_DIN 88 DI SPI master mode input SPI_DOUT 64 DO SPI master mode output Comment 1.8 V power domain. If unused, keep them open.
LTE Standard Module Series Table 23: Pin Definition of PSM Interface Pin Name Pin No. I/O Description PSM_IND 1 DO Indicates the module’s power saving mode. PSM_EINT 96 DI External interrupt pin. Wakes up the module from PSM. 4.10. Indication Signals Table 24: Pin Definition of Indication Signals Pin Name Pin No.
LTE Standard Module Series Flicker quickly (234 ms high/266 ms low) Registered on network and idle Flicker rapidly (63 ms low /62 ms high) Data transfer is ongoing Always high Voice calling Module VBAT 2.2K 4.7K NET_STATUS 47K Figure 26: Reference Circuit of Network Status Indication 4.10.2. STATUS The STATUS pin is an open drain output for indicating the module’s operation status. It will output high level when module is powered on successfully.
LTE Standard Module Series VBAT Module 2.2K 4.7K STATUS 47K Figure 27: Reference Circuit of STATUS 4.10.3. MAIN_RI You can configure MAIN_RI behaviors with AT+QCFG="risignaltype","physical". No matter on which port a URC is presented, the URC will trigger the behaviors of MAIN_RI. MAIN_RI behavior can be configured flexibly. The default behaviors of the MAIN_RI are shown as below. Table 28: Behaviors of MAIN_RI State Response Idle MAIN_RI keeps at high level.
LTE Standard Module Series 5 Antenna Interfaces The module provides a main antenna interface and a Bluetooth/Wi-Fi Scan antenna interface. The impedance of antenna ports is 50 Ω. 5.1. Main Antenna and Bluetooth/Wi-Fi Scan Antenna Interfaces 5.1.1. Pin Definition Table 29: Pin Definition of RF Antennas Pin Name Pin No. I/O Description Comment ANT_MAIN 60 AIO Main antenna interface 50 Ω impedance.
LTE Standard Module Series LTE-FDD B8 880-915 925-960 LTE-TDD B34 2010-2025 2010-2025 LTE-TDD B38 2570-2620 2570-2620 LTE-TDD B39 1880-1920 1880-1920 LTE-TDD B40 2300-2400 2300-2400 LTE-TDD B41 2535-2675 2535-2675 Table 31: Operating Frequency of EG915U-EU Operating Frequency Transmit (MHz) Receive (MHz) GSM850 824-849 869-894 PCS1900 1850-1910 1930-1990 GSM900 880-915 925-960 DCS1800 1710-1785 1805-1880 LTE-FDD B1 1920-1980 2110-2170 LTE-FDD B3 1710-1785 1805-1880 LT
LTE Standard Module Series GSM900 880-915 925-960 DCS1800 1710-1785 1805-1880 LTE-FDD B2 1850-1910 1930-1990 LTE-FDD B3 1710-1785 1805-1880 LTE-FDD B4 1710-1755 2110-2155 LTE-FDD B5 824-849 869-894 LTE-FDD B7 2500-2570 2620-2690 LTE-FDD B8 880-915 925-960 LTE-FDD B28 703-748 758-803 LTE-FDD B66 1710-1780 2110-2200 NOTE Only EG915U-CN supports LTE-TDD. 5.1.3. Reference Design of Antenna Interfaces A reference design of ANT_MAIN pin and ANT_BT/WIFI_SACN pin are shown as below.
LTE Standard Module Series Main Antenna Module R1 0R ANT_MAIN C1 C2 NM NM R2 ANT_BT/ WIFI_SCAN Bluetooth/ Wi-Fi Scan 0R C3 C4 NM NM Figure 28: Reference Circuit of RF Antennas 5.1.4. RF Routing Guidelines For user’s PCB, the characteristic impedance of all RF traces should be controlled as 50 Ω.
LTE Standard Module Series Figure 30: Coplanar Waveguide Design on a 2-layer PCB Figure 31: Coplanar Waveguide Design on a 4-layer PCB (Layer 3 as Reference Ground) Figure 32: Coplanar Waveguide Design on a 4-layer PCB (Layer 4 as Reference Ground) To ensure RF performance and reliability, follow the principles below in RF layout design: EG915U_Series_Hardware_Design 60 / 90
LTE Standard Module Series ⚫ ⚫ ⚫ ⚫ ⚫ ⚫ Use an impedance simulation tool to accurately control the characteristic impedance of RF traces to 50 Ω. The GND pins adjacent to RF pins should not be designed as thermal relief pads, and should be fully connected to ground. The distance between the RF pins and the RF connector should be as short as possible and all the right-angle traces should be changed to curved ones. The recommended trace angle is 135°.
LTE Standard Module Series Figure 33: Dimensions of U.FL-R-SMT Connector (Unit: mm) U.FL-LP serial connectors listed in the following figure can be used to match the U.FL-R-SMT. Figure 34: Mechanicals of U.FL-LP Connectors The following figure describes the space factor of mated connector.
LTE Standard Module Series Figure 35: Space Factor of Mated Connector (Unit: mm) For more details, please visit http://hirose.com.
LTE Standard Module Series 6 Reliability, Radio, and Electrical Characteristics 6.1. Absolute Maximum Ratings Absolute maximum ratings for power supply and voltage on digital and analog pins of the module are listed in the following table. Table 34: Absolute Maximum Ratings Parameter Min. Max. Unit VBAT_RF/VBAT_BB -0.3 6.0 V USB_VBUS -0.3 5.5 V Peak Current of VBAT_BB - 1.0 A Peak Current of VBAT_RF - 2.5 A Voltage on Digital Pins -0.3 2.
LTE Standard Module Series and maximum values. Voltage drop during transmitting burst Maximum power control level at GSM 900 - - 400 mV IVBAT Peak supply current (during transmission slot) Maximum power control level at GSM 900 - 1.7 2.5 A USB_VBUS USB connection detection - 3.5 5.0 5.25 V 6.3. Power Consumption Table 36: EG915U-CN Current Consumption Description Conditions Typ. Unit OFF state Power down 32 µA AT+CFUN=0 (USB disconnected) 1.0 mA AT+CFUN=0 (USB connected) 2.
LTE Standard Module Series LTE-FDD @ PF = 64 (USB connected) 3.0 mA LTE-FDD @ PF = 128 (USB disconnected) 1.4 mA LTE-FDD @ PF = 256 (USB disconnected) 1.2 mA LTE-TDD @ PF = 32 (USB disconnected) 2.5 mA LTE-TDD @ PF = 64 (USB disconnected) 1.8 mA LTE-TDD @ PF = 64 (USB connected) 3.1 mA LTE-TDD @ PF = 128 (USB disconnected) 1.4 mA LTE-TDD @ PF = 256 (USB disconnected) 1.2 mA GSM 900 @ DRX = 5 (USB disconnected) 12.2 mA GSM 900 @ DRX = 5 (USB connected) 28.
LTE Standard Module Series GSM900 1DL/4UL @ 26.63 dBm 405 mA DCS1800 4DL/1UL @ 30.13 dBm 160 mA DCS1800 3DL/2UL @ 28.12 dBm 221 mA DCS1800 2DL/3UL @ 26.01 dBm 249 mA DCS1800 1DL/4UL @ 23.94 dBm 258 mA GSM900 PCL=5 @ 32.83 dBm 245 mA GSM900 PCL=12 @ 18.94 dBm 90 mA GSM900 PCL=19 @ 6.18 dBm 63 mA DCS1800 PCL=0 @ 30.12 dBm 176 mA DCS1800 PCL=7 @ 15.97 dBm 75 mA DCS1800 PCL=15 @ 0.28 dBm 57 mA GSM900 PCL=5 @ 32.83 dBm 1.77 A GSM900 PCL=12 @ 18.94 dBm 0.
LTE Standard Module Series GS M900 @ DRX = 5 (USB disconnected) 1.55 mA GSM 900 @ DRX = 5 (USB connected) 2.67 mA GSM 900 @ DRX = 9 (USB disconnected) 1.39 mA DCS1800 @ DRX = 2 (USB disconnected) 2.1 mA DCS1800 @ DRX = 5 (USB disconnected) 1.5 mA DCS1800 @ DRX = 5 (USB connected) 2.78 mA DCS1800 @ DRX = 9 (USB disconnected) 1.36 mA LTE-FDD @ PF = 32 (USB disconnected) 3.49 mA LTE-FDD @ PF = 64 (USB disconnected) 2.22 mA LTE-FDD @ PF = 64 (USB connected) 3.
LTE Standard Module Series GSM voice call GSM850 2DL/3UL @ 28.66 dBm 457 mA GSM850 1DL/4UL @ 26.41 dBm 464 mA GSM900 4DL/1UL @ 32.31 dBm 245 mA GSM900 3DL/2UL @ 30.7 dBm 371 mA GSM900 2DL/3UL @ 28.66 dBm 445 mA GSM900 1DL/4UL @ 26.63 dBm 452 mA DCS1800 4DL/1UL @ 29.84 dBm 171 mA DCS1800 3DL/2UL @ 27.89 dBm 242 mA DCS1800 2DL/3UL @ 25.85 dBm 269 mA DCS1800 1DL/4UL @ 23.78 dBm 279 mA PCS1900 4DL/1UL @ 29.68 dBm 171 mA PCS1900 3DL/2UL @ 27.
LTE Standard Module Series GSM voice call (Max. Current) PCS1900 PCL = 15 @ 0.58 dBm 75 mA GSM850 PCL = 5 @ 32.82 dBm 1.88 A GSM850 PCL = 12 @ 19.08 dBm 0.46 A GSM850 PCL = 19 @ 6.12 dBm 0.19 A GSM900 PCL = 5 @ 32.34 dBm 1.72 A GSM900 PCL = 12 @ 19.06 dBm 0.44 A GSM900 PCL = 19 @ 5.39 dBm 0.19 A DCS1800 PCL = 0 @ 29.89 dBm 1.13 A DCS1800 PCL = 7 @ 15.96 dBm 0.30 A DCS1800 PCL = 15 @ 0.95 dBm 0.16 A PCS1900 PCL = 0 @ 29.66 dBm 1.10 A PCS1900 PCL = 7 @ 15.59 dBm 0.
LTE Standard Module Series DCS1800 @ DRX = 5 (USB disconnected) 1.63 mA DCS1800 @ DRX = 5 (USB connected) 3.03 mA DCS1800 @ DRX = 9 (USB disconnected) 1.48 mA LTE-FDD @ PF = 32 (USB disconnected) 3.54 mA LTE-FDD @ PF = 64 (USB disconnected) 2.25 mA LTE-FDD @ PF = 64 (USB connected) 3.74 mA LTE-FDD @ PF = 128 (USB disconnected) 1.61 mA LTE-FDD @ PF = 256 (USB disconnected) 1.32 mA GSM 900 @ DRX = 5 (USB disconnected) 13.06 mA GSM 900 @ DRX = 5 (USB connected) 28.
LTE Standard Module Series GSM900 2DL/3UL @ 28.66 dBm 456 mA GSM900 1DL/4UL @ 26.63 dBm 452 mA DCS1800 4DL/1UL @ 29.84 dBm 174 mA DCS1800 3DL/2UL @ 27.89 dBm 244 mA DCS1800 2DL/3UL @ 25.85 dBm 270 mA DCS1800 1DL/4UL @ 23.78 dBm 280 mA PCS1900 4DL/1UL @ 29.68 dBm 179 mA PCS1900 3DL/2UL @ 27.74 dBm 250 mA PCS1900 2DL/3UL @ 25.66 dBm 289 mA PCS1900 1DL/4UL @ 23.59 dBm 295 mA GSM850 PCL = 5 @ 32.82 dBm 288 mA GSM850 PCL = 12 @ 19.08 dBm 113 mA GSM850 PCL = 19 @ 6.
LTE Standard Module Series 6.4. Tx Power Table 39: EG915U-CN RF Output Power Frequency Bands Max. RF Output Power Min. RF Output Power GSM900 33 dBm ±2 dB 5 dBm ±5 dB DCS1800 30 dBm ±2 dB 0 dBm ±5 dB LTE-FDD B1/B3/B5/B8 23 dBm ±2 dB < -39 dBm LTE-TDD B34/B38/B39/B40/B41 23 dBm ±2 dB < -39 dBm Frequency Bands Max. RF Output Power Min.
LTE Standard Module Series 6.5. Rx Sensitivity Table 42: EG915U-CN Conducted RF Receiving Sensitivity Receiving Sensitivity (Typ.) Frequency Primary 3GPP (SIMO) Primary + Diversity GSM900 -108.0 -102 dBm DCS1800 -107.5 -102 dBm LTE-FDD B1 (10 MHz) -97.3 -96.3 dBm LTE-FDD B3 (10 MHz) -98 -93.3 dBm LTE-FDD B5 (10 MHz) -99 -94.3 dBm LTE-FDD B8 (10 MHz) -99 -93.3 dBm LTE-TDD B34 (10 MHz) -98 -96.3 dBm LTE-TDD B38 (10 MHz) -97.6 -96.3 dBm LTE-TDD B39 (10 MHz) -98.4 -96.
LTE Standard Module Series LTE-FDD B3 (10 MHz) -98.3 -93.3 dBm LTE-FDD B5 (10 MHz) -97.4 -94.3 dBm LTE-FDD B7 (10 MHz) -96.1 -94.3 dBm LTE-FDD B8 (10 MHz) -97 -93.3 dBm LTE-FDD B20 (10 MHz) -98.3 -93.3 dBm LTE-FDD B28 (10 MHz) -98.6 -94.8 dBm Table 44: EG915U-LA Conducted RF Receiving Sensitivity Receiving Sensitivity (Typ.) Frequency Primary 3GPP (SIMO) Primary + Diversity GSM850 -108 -102 dBm GSM900 -106.8 -102 dBm DCS1800 -107.5 -102 dBm PCS1900 -107.
LTE Standard Module Series 6.6. ESD If the static electricity generated by various ways discharges to the module, the module maybe damaged to a certain extent. Thus, please take proper ESD countermeasures and handling methods. For example, wearing anti-static gloves during the development, production, assembly and testing of the module; adding ESD protective component to the ESD sensitive interfaces and points in the product design.
LTE Standard Module Series 7 Mechanical Information This chapter describes the mechanical dimensions of the module. All dimensions are measured in millimeter (mm), and the dimensional tolerances are ±0.2 mm unless otherwise specified. 7.1.
LTE Standard Module Series Figure 37: Module Bottom Dimensions ⚫ NOTE The package warpage level of the module conforms to the JEITA ED-7306 standard.
LTE Standard Module Series 7.2 Recommended Footprint Figure 38: Recommended Footprint (Top View) . NOTE Keep at least 3 mm between the module and other components on the motherboard to improve soldering quality and maintenance convenience.
LTE Standard Module Series 7.3 Top and Bottom Views Figure 39: Top and Bottom Views NOTE Images above are for illustration purpose only and may differ from the actual module. For authentic appearance and label, please refer to the module received from Quectel.
LTE Standard Module Series 8 Storage, Manufacturing, and Packaging 8.1 Storage Conditions Module is provided with vacuum-sealed packaging. MSL of the module is rated as 3. The storage requirements are shown below. 1. Recommended Storage Condition: The temperature should be 23 ±5 °C and the relative humidity should be 35–60 %. 2. The storage life (in vacuum-sealed packaging) is 12 months in Recommended Storage Condition. 3.
LTE Standard Module Series NOTE 1. 2. 3. To avoid blistering, layer separation and other soldering issues, extended exposure of the module to the air is forbidden. Take out the module from the package and put it on high-temperature-resistant fixtures before baking. All modules must be soldered to PCB within 24 hours after the baking, otherwise put them in the drying oven. If shorter baking time is desired, see IPC/JEDEC J-STD-033 for the baking procedure.
LTE Standard Module Series Table 47: Recommended Thermal Profile Parameters Factor Recommendation Soak Zone Max slope 1–3 °C/s Soak time (between A and B: 150 °C and 200 °C) 70–120 s Reflow Zone Max slope 2–3 °C/s Reflow time (D: over 217 °C) 40–70 s Max temperature 235–246 °C Cooling down slope -1.5 to -3 °C/s Reflow Cycle Max reflow cycle 1 NOTE 1. 2. 3. 4. 5.
LTE Standard Module Series 8.3 Packaging Specifications The module adopts carrier tape packaging and details are as follow: 8.1.1. Carrier Tape Dimension details are as follow: Figure 41: Carrier Tape Dimension Drawing Table 48: Carrier Tape Dimension Table (Unit: mm) W P T A0 B0 K0 K1 F E 44 32 0.35 20.2 24 3.15 6.65 20.2 1.
LTE Standard Module Series 8.1.2. Plastic Reel Figure 42: Plastic Reel Dimension Drawing Table 49: Plastic Reel Dimension Table (Unit: mm) øD1 øD2 W 330 100 44.5 8.1.3. Packaging Process Place the module into the carrier tape and use the cover tape to cover them; then wind the heat-sealed carrier tape to the plastic reel and use the protective tape for protection. One plastic reel can load 250 modules.
LTE Standard Module Series Place the vacuum-packed plastic reel into a pizza box. Put 4 pizza boxes into 1 carton and seal it. One carton can pack 1000 modules.
LTE Standard Module Series 9 Appendix References Table 50: Related Documents Document Name [1] Quectel_UMTS<E_EVB_User_Guide [2] Quectel_EC200U&EG915U_Series_AT_Commands_Manual [3] Quectel_RF_Layout_Application_Note [4] Quectel_Module_SMT_User_Guide Table 51: Terms and Abbreviations Abbreviation Description ADC Analog-to-Digital Converter AMR-WB Adaptive Multi-Rate Wideband AP Application Processor bps Bits Per Second CA Carrier Aggregation CHAP Challenge Handshake Authentication Protocol
LTE Standard Module Series DRX Diversity Receive DTE Data Terminal Equipment DTR Data Terminal Ready EFR Enhanced Full Rate ESD Electrostatic Discharge FDD Frequency Division Duplex GNSS Global Navigation Satellite System GPS Global Positioning System GRFC General RF Control HB High Band HR Half Rate I/O Input/Output LB Low Band LGA Land Grid Array LTE Long Term Evolution MB Middle Band MCU Microcontroller Unit MT Mobile Terminated PA Power Amplifier PAP Password Auth
LTE Standard Module Series QPSK Quadrature Phase Shift Keying RI Ring Indicator RF Radio Frequency Rx Receive SIMO Single Input Multiple Output SMS Short Message Service SPI Serial Peripheral Interface TDD Time Division Duplexing Tx Transmit UART Universal Asynchronous Receiver/Transmitter UL Uplink UMTS Universal Mobile Telecommunications System URC Unsolicited Result Code USB Universal Serial Bus (U)SIM Universal Subscriber Identity Module VBAT Voltage at Battery (Pin) Vma
LTE Standard Module Series VOHmax Maximum High-level Output Voltage VOHmin Minimum High-level Output Voltage VOLmax Maximum Low-level Output Voltage VOLmin Minimum Low-level Output Voltage VSWR Voltage Standing Wave Ratio EG915U_Series_Hardware_Design 90 / 90
OEM/Integrators Installation Manual Important Notice to OEM integrators 1. This module is limited to OEM installation ONLY. 2. This module is limited to installation in mobile or fixed applications, according to Part 2.1091(b). 3. The separate approval is required for all other operating configurations, including portable configurations with respect to Part 2.1093 and different antenna configurations 4. For FCC Part 15.
Antenna (1) The antenna must be installed such that 20 cm is maintained between the antenna and users, (2) The transmitter module may not be co-located with any other transmitter or antenna. In the event that these conditions cannot be met (for example certain laptop configurations or co-location with another transmitter), then the FCC authorization is no longer considered valid and the FCC ID cannot be used on the final product.
Federal Communication Commission Interference Statement This device complies with Part 15 of the FCC Rules. Operation is subject to the following two conditions: (1) This device may not cause harmful interference, and (2) this device must accept any interference received, including interference that may cause undesired operation. This equipment has been tested and found to comply with the limits for a Class B digital device, pursuant to Part 15 of the FCC Rules.
This device is intended only for OEM integrators under the following conditions: (For module device use) 1) The antenna must be installed such that 20 cm is maintained between the antenna and users, and 2) The transmitter module may not be co-located with any other transmitter or antenna. As long as 2 conditions above are met, further transmitter test will not be required.