Manual

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Features

•

Fast Read Access Time - 120 ns

•

Automatic Page Write Operation

Internal Address and Data Latches for 128-Bytes

Internal Control Timer

•

Fast Write Cycle Time

Page Write Cycle Time - 10 ms Maximum

1 to 128-Byte Page Write Operation

•

Low Power Dissipation

80 mA Active Current

300

µA CMOS Standby Current

•

Hardware and Software Data Protection

•

DATA Polling for End of Write Detection

•

High Reliability CMOS Technology

Endurance: 10

or 10

Cycles

Data Retention: 10 Years

•

Single 5V

10% Supply

•

CMOS and TTL Compatible Inputs and Outputs

•

JEDEC Approved Byte-Wide Pinout

Description

The AT28C010 is a high-performance Electrically Erasable and Programmable Read

Only Memory. Its one megabit of memory is organized as 131,072 words by 8 bits.

Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 120 ns with power dissipation of just 440 mW. When the device is

deselected, the CMOS standby current is less than 300

Rev. 0010C–10/98

Pin Configuration

Pin Name Function

A0 - A16 Addresses

CE Chip Enable

OE Output Enable

WE Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

AT28C010 Mil

1-Megabit

(128K x 8)

Paged Parallel

EEPROMs

AT28C010

Military

CERDIP, FLATPACK

Top View

A16

A15

A12

I/O0

I/O1

I/O2

GND

VCC

A14

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

PGA

Top Vi ew

44 LCC

Top Vi ew

A12

A13

A11

A10

I/O0

I/O1

I/O2

VSS

I/O3

I/O4

I/O5

I/O6

I/O7

A15

A16

VCC

A14

32 LCC

Top Vi ew

I/O0

A14

A13

A11

A10

I/O7

I/O1

I/O2

GND

I/O3

I/O4

I/O5

I/O6

A12

A15

A16

VCC

(continued)

Summary of content (16 pages)

PAGE 1
Features • Fast Read Access Time - 120 ns • Automatic Page Write Operation • • • • • • • • Internal Address and Data Latches for 128-Bytes Internal Control Timer Fast Write Cycle Time Page Write Cycle Time - 10 ms Maximum 1 to 128-Byte Page Write Operation Low Power Dissipation 80 mA Active Current 300 µA CMOS Standby Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology Endurance: 104 or 105 Cycles Data Retention: 10 Years Single 5V ± 10% Su
PAGE 2
The AT28C010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing of up to 128-bytes simultaneously. During a write cycle, the address and 1 to 128-bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer.
PAGE 3
AT28C010 Mil Device Operation READ: The AT28C010 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either CE or OE is high. This dualline control gives designers flexibility in preventing bus contention in their system. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle.
PAGE 4
DC and AC Operating Range AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 -55°C - 125°C -55°C - 125°C -55°C - 125°C -55°C - 125°C 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% Mode CE OE WE I/O Read VIL VIL VIH DOUT Write (2) VIL VIH VIL DIN Standby/Write Inhibit VIH X (1) X High Z Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X Operating Temperature (Case) Mil. VCC Power Supply Operating Modes Notes: High Z 1. X can be VIL or VIH. 2.
PAGE 5
AT28C010 Mil AC Read Characteristics Symbol Parameter tACC AT28C010-12 AT28C010-15 AT28C010-20 AT28C010-25 Min Min Min Min Max Max Max Max Units Address to Output Delay 120 150 200 250 ns tCE (1) CE to Output Delay 120 150 200 250 ns tOE (2) OE to Output Delay 0 50 0 55 0 55 0 55 ns tDF (3, 4) CE or OE to Output Float 0 50 0 55 0 55 0 55 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 0 0 0 ns AC Read Waveforms(1)(2)(3)(4) No
PAGE 6
AC Write Characteristics Symbol Parameter tWC Write Cycle Time tAS Address Set-up Time 0 ns tAH Address Hold Time 50 ns tDS Data Set-up Time 50 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 100 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High AC Write Waveforms WE Controlled CE Controlled 6 AT28C010 Mil Min Max Units 10 ms 150 50 µs ns
PAGE 7
AT28C010 Mil Page Mode Characteristics Symbol Parameter Min Max Units tAS, tOES Address, OE Set-up Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 100 ns tDS Data Set-up Time 50 ns tDH, tOEH Data, OE Hold Time 0 ns Page Mode Write Waveforms (1)(2) Notes: 1. A7 through A16 must specify the page address during each high to low transition of WE (or CE). 2.
PAGE 8
Software Data Protection Enable Algorithm(1) Software Data Protection Disable Algorithm(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 LOAD DATA 80 TO ADDRESS 5555 WRITES ENABLED(2) LOAD DATA AA TO ADDRESS 5555 LOAD DATA XX TO ANY ADDRESS(4) LOAD LAST BYTE TO LAST ADDRESS Notes: LOAD DATA 55 TO ADDRESS 2AAA ENTER DATA PROTECT STATE 1.
PAGE 9
AT28C010 Mil Data Polling Characterstics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min Max OE to Output Delay tWR Write Recovery Time Units 10 ns 10 ns (2) tOE Notes: Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics.
PAGE 10
AT28C010 Ordering Information(1) ICC (mA) tACC (ns) Active Standby Ordering Code Package 120 80 0.3 AT28C010(E)-12DM/883 AT28C010(E)-12EM/883 AT28C010-12FM/883 AT28C010(E)-12LM/883 AT28C010(E)-12UM/883 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 150 80 0.3 AT28C010(E)-15DM/883 AT28C010(E)-15EM/883 AT28C010-15FM/883 AT28C010(E)-15LM/883 AT28C010(E)-15UM/883 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 200 80 0.
PAGE 11
AT28C010 Mil 5962-38267 Ordering Information(1) ICC (mA) tACC (ns) Active Standby Ordering Code Package 120 80 0.3 5962-38267 07 MXX 5962-38267 07 MZX 5962-38267 07 MYX 5962-38267 07 MTX 32D6 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 150 80 0.3 5962-38267 05 MXX 5962-38267 05 MUX 5962-38267 05 MZX 5962-38267 05 MYX 5962-38267 05 MTX 32D6 32L 32F 44L 30U Military/883C Class B, Fully Compliant (-55°C to 125°C) 200 80 0.
PAGE 12
Valid Part Numbers The following table lists standard Atmel products that can be ordered.
PAGE 13
AT28C010 Mil Packaging Information 32D6, 32-Lead, 0.600" Wide, Non-Windowed, Ceramic Dual inline Package (Cerdip) Dimensions in Inches and (Millimeters) 32F, 32-Lead, Non-Windowed, Ceramic Bottom Brazed Flat Package (Flatpack) Dimensions in Inches and (Millimeters) MIL-STD-1835 D-16 CONFIG A MIL-STD-1835 F-18 CONFIG B JEDEC OUTLINE MO-115 1.68(42.7) 1.64(41.7) PIN #1 ID PIN 1 .370(9.40) .270(6.86) .019(.482) .015(.381) .610(15.5) .570(14.5) .098(2.49) MAX 1.500(38.10) REF SEATING PLANE .200(5.
PAGE 14
Packaging Information 30U, 30-Pin, Ceramic Pin Grid Array (PGA) Dimensions in Inches and (Millimeters) 14 AT28C010 Mil
PAGE 15
AT28C010 Mil 15
PAGE 16
Atmel Headquarters Atmel Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600 Europe 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL (719) 576-3300 FAX (719) 540-1759 Atmel Rousset Atmel U.K., Ltd.