User Manual

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LCC

Top View

A12

A13

A11

A10

I/O0

I/O1

I/O2

VSS

I/O3

I/O4

I/O5

I/O6

I/O7

A15

A16

A18

VCC

A17

A14

Features

•

Read Access Time - 200 ns

•

Automatic Page Write Operation

– Internal Address and Data Latches for 256 Bytes

– Internal Control Timer

•

Fast Write Cycle Time

– Page Write Cycle Time - 10 ms Maximum

– 1 to 256 Byte Page Write Operation

•

Low Power Dissipation

– 80 mA Active Current

•

Hardware and Software Data Protection

•

DA T A Polling for End of Write Detection

•

High Reliability CMOS Technology

– Enduran ce: 10,000 Cyc le s

– Data Retention: 10 Years

•

Single 5V

10% Supply

•

CMOS and TTL Compatible Inputs and Outputs

•

JEDEC Approved Byte-Wide Pinout

Description

The AT28C040 is a hi gh-performance e lectrically erasable a nd programmab le read

only memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 200 ns with power dissipation of just 440 mW.

Rev. 0542B–10/98

Pin Configurations

Pin Name Function

A0 - A18 Addresses

Chip Enable

OE Output Enable

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

SIDE BRAZE,

FLATPACK

To p V i ew

A18

A16

A15

A12

I/O0

I/O1

I/O2

GND

VCC

A17

A14

A13

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

(continued)

4-Megabit

(512K x 8)

Paged Parallel

EEPROMs

AT28C 040

Summary of content (12 pages)

PAGE 1
Features • Read Access Time - 200 ns • Automatic Page Write Operation • • • • • • • • – Internal Address and Data Latches for 256 Bytes – Internal Control Timer Fast Write Cycle Time – Page Write Cycle Time - 10 ms Maximum – 1 to 256 Byte Page Write Operation Low Power Dissipation – 80 mA Active Current Hardware and Software Data Protection DATA Polling for End of Write Detection High Reliability CMOS Technology – Endurance: 10,000 Cycles – Data Retention: 10 Years Single 5V ± 10% Supply CMOS and TTL Compa
PAGE 2
The AT28C040 is accessed like a static RAM for the read or write cycle without the need for external components. The device contains a 256-byte page register to allow writing of up to 256 bytes simultaneously. During a write cycle, the address and 1 to 256 bytes of data are internally latched, freeing the address and data bus for other operations. Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer.
PAGE 3
AT28C040 Device Operation READ: The AT28C040 is accessed like a static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either CE or OE is high. This dualline control gives designers flexibility in preventing bus contention in their systems. BYTE WRITE: A low pulse on the WE or CE input with CE or WE low (respectively) and OE high initiates a write cycle.
PAGE 4
DC and AC Operating Range AT28C040-20 AT28C040-25 Operation Operation Read Program Read Program 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C Industrial -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C Extended -55°C - 125°C -40°C - 85°C -55°C - 125°C -40°C - 85°C 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN High Z Commercial Operating Temperature (Case) VCC Power Supply Operating Modes Write (2) Standby/Write Inhib
PAGE 5
AT28C040 AC Read Characteristics Symbol Parameter tACC AT28C040-20 AT28C040-25 Min Min Max Max Units Address to Output Delay 200 250 ns (1) CE to Output Delay 200 250 ns (2) OE to Output Delay 0 55 0 55 ns tDF(3)(4) CE or OE to Output Float 0 55 0 55 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE tOE 0 ns AC Read Waveforms(1)(2)(3)(4) Note: 1. CE May be delayed up to tACC - tCE after the address transition wihtout impact on tACC. 2.
PAGE 6
AC Write Characteristics Symbol Parameter Min tAS, tOES Address, OE Set-up Time 0 ns tAH Address Hold Time 50 ns tCS Chip Select Set-up Time 0 ns tCH Chip Select Hold Time 0 ns tWP Write Pulse Width (WE or CE) 100 ns tDS Data Set-up Time 50 ns tDH, tOEH Data, OE Hold Time 0 ns AC Write Waveforms WE Controlled CE Controlled 6 AT28C040 Max Units
PAGE 7
AT28C040 Page Mode Characteristics Symbol Parameter Min Max Units tWC Write Cycle Time 10 ms tAS Address Set-up Time 0 ns tAH Address Hold Time 50 ns tDS Data Set-up Time 50 ns tDH Data Hold Time 0 ns tWP Write Pulse Width 100 ns tBLC Byte Load Cycle Time tWPH Write Pulse Width High 150 50 µs ns Page Mode Write Waveforms(1)(2) Notes: 1. A8 through A18 must specify the page address during each high to low transition of WE (or CE). 2.
PAGE 8
Software Data Protection Enable Algorithm(1) Notes: Software Data Protection Disable Algorithm(1) LOAD DATA AA TO ADDRESS 5555 LOAD DATA AA TO ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 LOAD DATA 80 TO ADDRESS 5555 WRITES ENABLED(2) LOAD DATA XX TO ANY ADDRESS(4) LOAD DATA AA TO ADDRESS 5555 LOAD LAST BYTE TO LAST ADDRESS LOAD DATA 55 TO ADDRESS 2AAA ENTER DATA PROTECT STATE 1.
PAGE 9
AT28C040 Data Polling Characteristics(1) Symbol Parameter Min tDH Data Hold Time 10 ns tOEH OE Hold Time 10 ns Max (2) tOE OE to Output Delay tWR Write Recovery Time Notes: Typ Units ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See AC Read Characteristics.
PAGE 10
Ordering Information(1) ICC (mA) tACC (ns) Active Standby Ordering Code Package 200 80 3 AT28C040-20BC AT28C040-20FC AT28C040-20LC 32B 32F 44L Commercial (0° to 70°C) 80 3 AT28C040-20BI AT28C040-20FI AT28C040-20LI 32B 32F 44L Industrial (-40° to 85°C) 80 3 AT28C040-20BI SL703 AT28C040-20FI SL703 AT28C040-20LI SL703 32B 32F 44L Extended (See DC and AC Operating Range Table) 80 3 AT28C040-25BC AT28C040-25FC AT28C040-25LC 32B 32F 44L Commercial (0° to 70°C) 80 3 AT28C040-25BI AT28C
PAGE 11
AT28C040 Packaging Information 32B, 32-Lead, 0.600" Wide, Ceramic Side Braze Dual Inline (Side Braze) Dimensions in Inches and (Millimeters) 32F, 32-Lead, Non-Windowed, Ceramic BottomBrazed Flat Package (Flatpack) Dimension in Inches and (Millimeters) JEDEC OUTLINE MO-115 PIN #1 ID .370(9.40) .270(6.86) .019(.482) .015(.381) .829(21.1) .811(20.6) .050(1.27) BSC .045(1.14) MAX .488(12.4) .472(12.0) .120(3.05) .098(2.49) .006(.152) .004(.101) .408(10.4) .355(9.02) .045(1.14) .026(.660) .072(1.82) .
PAGE 12
Atmel Headquarters Atmel Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600 Europe 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL (719) 576-3300 FAX (719) 540-1759 Atmel Rousset Atmel U.K., Ltd.