User Manual

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1

Features

•

Fast Read Access Time - 150 ns

•

Fast Byte Write - 200

µs or 1 ms

•

Self-Timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

•

Direct Microprocessor Control

–DATA POLLING

•

Low Power

– 30 mA Active Current

–100

µA CMOS Standby Current

•

High Reliability

– Endurance: 10

4

or 10

5

Cycles

– Data Retention: 10 Years

•

5V

±

10% Supply

•

CMOS & TTL Compatible Inputs and Outputs

•

JEDEC Approved Byte Wide Pinout

•

Commercial and Industrial Temperature Ranges

Description

The AT28C16 is a low-power, high-performance Electrically Erasable and Program-

mable Read Only Memory with easy to use features. The AT28C16 is a 16K memory

organized as 2,048 words by 8 bits. The device is manufactured with Atmel’s reliable

nonvolatile CMOS technology.

16K (2K x 8)

Parallel

EEPROMs

AT28C16

Rev. 0540B–10/98

Pin Configurations

Pin Name Function

A0 - A10 Addresses

CE

Chip Enable

OE Output Enable

WE

Write Enable

I/O0 - I/O7 Data Inputs/Outputs

NC No Connect

DC Don’t Connect

PDIP, SOIC

Top View

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2

3

4

5

6

7

8

9

10

11

12

24

23

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20

19

18

17

16

15

14

13

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

GND

VCC

A8

A9

WE

OE

A10

CE

I/O7

I/O6

I/O5

I/O4

I/O3

PLCC

Top View

Note: PLCC package pins 1 and 17

are DON’T CONNECT.

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6

7

8

9

10

11

12

13

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28

27

26

25

24

23

22

21

A6

A5

A4

A3

A2

A1

A0

NC

I/O0

A8

A9

NC

NC

OE

A10

CE

I/O7

I/O6

4

3

2

1

32

31

30

14

15

16

17

18

19

20

I/O1

I/O2

GND

DC

I/O3

I/O4

I/O5

A7

NC

NC

DC

VCC

WE

NC

(continued)

Summary of content (12 pages)

PAGE 1
Features • Fast Read Access Time - 150 ns • Fast Byte Write - 200 µs or 1 ms • Self-Timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – DATA POLLING Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS & TTL Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial
PAGE 2
The AT28C16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA POLLING of I/O7.
PAGE 3
AT28C16 Device Operation READ: The AT28C16 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28C16 is similar to writing into a Static RAM.
PAGE 4
DC and AC Operating Range AT28C16-15 Operating Temperature (Case) Com. 0°C - 70°C Ind. -40°C - 85°C 5V ± 10% VCC Power Supply Operating Modes Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN High Z Write (2) Standby/Write Inhibit (1) VIH X X Write Inhibit X X VIH Write Inhibit X VIL X Output Disable X VIH X High Z VIL High Z Chip Erase Notes: VIL VH (3) 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 3. VH = 12.0V ± 0.
PAGE 5
AT28C16 AC Read Characteristics AT28C16-15 Symbol Parameter tACC Min Max Units Address to Output Delay 150 ns (1) CE to Output Delay 150 ns (2) OE to Output Delay 10 70 ns tDF(3)(4) CE or OE High to Output Float 0 50 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE tOE ns AC Read Waveforms(1)(2)(3)(4) Notes: 1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2.
PAGE 6
AC Write Characteristics Symbol Parameter Min tAS, tOES Address, OE Set-up Time 10 ns tAH Address Hold Time 50 ns tWP Write Pulse Width (WE or CE) 100 tDS Data Set-up Time 50 ns tDH, tOEH Data, OE Hold Time 10 ns tCS, tCH CE to WE and WE to CE Set-up and Hold Time 0 ns tWC Write Cycle Time AC Write Waveforms WE Controlled CE Controlled 6 AT28C16 Typ Max 1000 Units ns AT28C16 0.5 1.
PAGE 7
AT28C16 Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min OE to Output Delay tWR Write Recovery Time Notes: Max Units 10 ns 10 ns (2) tOE Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See AC Characteristics. Data Polling Waveforms Chip Erase Waveforms tS = tH = 1 µsec (min.) tW = 10 msec (min.) VH = 12.0V ± 0.
PAGE 8
AT28C16
PAGE 9
AT28C16 Ordering Information(1) ICC (mA) tACC (ns) Active Standby Ordering Code Package 150 30 0.1 AT28C16(E)-15JC AT28C16(E)-15PC AT28C16(E)-15SC 32J 24P6 24S Commercial (0°C to 70°C) 45 0.1 AT28C16(E)-15JI AT28C16(E)-15PI AT28C16(E)-15SI 32J 24P6 24S Industrial (-40°C to 85°C) Notes: Operation Range 1. See Valid Part Numbers table below. 2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the faster 150 ns TAA offering. 3.
PAGE 10
Packaging Information 32J, 32-Lead, Plastic J-Leaded Chip Carrier (PLCC) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-018 AA 24P6, 24-Lead, 0.600” Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-011 AA .045(1.14) X 45° PIN NO. 1 IDENTIFY .025(.635) X 30° - 45° .012(.305) .008(.203) .050(1.27) TYP .030(.762) .015(3.81) .095(2.41) .060(1.52) .140(3.56) .120(3.05) .022(.559) X 45° MAX (3X) .453(11.5) .447(11.4) .495(12.6) .485(12.3) .020(.
PAGE 11
AT28C16 11
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Atmel Headquarters Atmel Operations Corporate Headquarters Atmel Colorado Springs 2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600 Europe 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL (719) 576-3300 FAX (719) 540-1759 Atmel Rousset Atmel U.K., Ltd.