User Manual

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Features

• Fast Read Access Time – 120 ns

• Fast Byte Write – 200 µs or 1 ms

• Self-timed Byte Write Cycle

– Internal Address and Data Latches

– Internal Control Timer

– Automatic Clear Before Write

• Direct Microprocessor Control

– READY/BUSY

Open Drain Output

– DATA Polling

• Low Power

– 30 mA Active Current

– 100 µA CMOS Standby Current

• High Reliability

– Endurance: 10

or 10

Cycles

– Data Retention: 10 Years

• 5V ± 10% Supply

• CMOS and TTL Compatible Inputs and Outputs

• JEDEC Approved Byte-wide Pinout

• Commercial and Industrial Temperature Ranges

Description

The AT28C64 is a low-power, high-performance 8,192 words by 8-bit nonvolatile elec-

trically erasable and programmable read only memory with popular, easy-to-use fea-

tures. The device is manufactured with Atmel’s reliable nonvolatile technology.

64K (8K x 8)

Parallel

EEPROMs

AT28C64

AT28C64X

Rev. 0001H–12/99

Pin Configurations

Pin Name Function

A0 - A12 Addresses

Chip Enable

Output Enable

WE Write Enable

I/O0 - I/O7 Data Inputs/Outputs

RDY/BUSY

Ready/Busy Output

NC No Connect

DC Don’t Connect

TSOP

Top View

A11

VCC

RDY/BUSY (or NC)

A12

A10

I/O7

I/O6

I/O5

I/O4

I/O3

GND

I/O2

I/O1

I/O0

LCC, PLCC

Top V i e w

Note: PLCC package pins 1 and 17 are

DON’T CONNECT.

I/O0

A11

A10

I/O7

I/O6

I/O1

I/O2

VSS

I/O3

I/O4

I/O5

A12

RDY/BUSY (or NC)

VCC

(continued)

PDIP, SOIC

Top V i e w

RDY/BUSY (or NC)

A12

I/O0

I/O1

I/O2

GND

VCC

A11

A10

I/O7

I/O6

I/O5

I/O4

I/O3

Summary of content (12 pages)

PAGE 1
Features • Fast Read Access Time – 120 ns • Fast Byte Write – 200 µs or 1 ms • Self-timed Byte Write Cycle • • • • • • • – Internal Address and Data Latches – Internal Control Timer – Automatic Clear Before Write Direct Microprocessor Control – READY/BUSY Open Drain Output – DATA Polling Low Power – 30 mA Active Current – 100 µA CMOS Standby Current High Reliability – Endurance: 104 or 105 Cycles – Data Retention: 10 Years 5V ± 10% Supply CMOS and TTL Compatible Inputs and Outputs JEDEC Approved Byte-wide
PAGE 2
The AT28C64 is accessed like a Static RAM for the read or write cycles without the need for external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer.
PAGE 3
AT28C64(X) Device Operation READ: The AT28C64 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28C64 is similar to writing into a Static RAM.
PAGE 4
DC and AC Operating Range AT28C64-12 AT28C64-15 AT28C64-20 AT28C64-25 0°C - 70°C 0°C - 70°C 0°C - 70°C 0°C - 70°C -40°C - 85°C -40°C - 85°C -40°C - 85°C -40°C - 85°C 5V ± 10% 5V ± 10% 5V ± 10% 5V ± 10% Mode CE OE WE I/O Read VIL VIL VIH DOUT VIL VIH VIL DIN VIH (1) X High Z Com. Operating Temperature (Case) Ind.
PAGE 5
AT28C64(X) AC Read Characteristics Symbol Parameter tACC AT28C64-12 AT28C64-15 AT28C64-20 AT28C64-25 Min Min Min Min Max Max Max Max Units Address to Output Delay 120 150 200 250 ns (1) CE to Output Delay 120 150 200 250 ns (2) OE to Output Delay 10 60 10 70 10 80 10 100 ns tDF(3)(4) CE or OE High to Output Float 0 45 0 50 0 55 0 60 ns tOH Output Hold from OE, CE or Address, whichever occurred first 0 tCE tOE 0 0 0 ns AC Read Waveforms(1)(2)(3)(4)
PAGE 6
AC Write Characteristics Symbol Parameter Min tAS, tOES Address, OE Setup Time 10 ns tAH Address Hold Time 50 ns tWP Write Pulse Width (WE or CE) 100 tDS Data Setup Time 50 ns tDH, tOEH Data, OE Hold Time 10 ns tCS, tCH CE to WE and WE to CE Setup and Hold Time 0 ns tDB Time to Device Busy tWC Write Cycle Time (option available) AT28C64 AT28C64E AC Write Waveforms WE Controlled CE Controlled 6 AT28C64(X) Max 1000 Units ns 50 ns 1 ms 200 µs
PAGE 7
AT28C64(X) Data Polling Characteristics(1) Symbol Parameter tDH Data Hold Time tOEH OE Hold Time Min OE to Output Delay tWR Write Recovery Time Notes: Max Units 10 ns 10 ns (2) tOE Typ ns 0 ns 1. These parameters are characterized and not 100% tested. 2. See “AC Read Characteristics”. Data Polling Waveforms Chip Erase Waveforms tS = tH = 1 µsec (min.) tW = 10 msec (min.) VH = 12.0 ± 0.
PAGE 8
AT28C64(X)
PAGE 9
AT28C64(X) AT28C64 Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package 120 30 0.1 AT28C64(E)-12JC AT28C64(E)-12PC AT28C64(E)-12SC AT28C64(E)-12TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.1 AT28C64(E)-12JI AT28C64(E)-12PI AT28C64(E)-12SI AT28C64(E)-12TI 32J 28P6 28S 28T Industrial (-40°C to 85°C) 30 0.1 AT28C64(E)-15JC AT28C64(E)-15PC AT28C64(E)-15SC AT28C64(E)-15TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.
PAGE 10
AT28C64X Ordering Information ICC (mA) tACC (ns) Active Standby Ordering Code Package 150 30 0.1 AT28C64X-15JC AT28C64X-15PC AT28C64X-15SC AT28C64X-15TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.1 AT28C64X-15JI AT28C64X-15PI AT28C64X-15SI AT28C64X-15TI 32J 28P6 28S 28T Industrial (-40°C to 85°C) 30 0.1 AT28C64X-20JC AT28C64X-20PC AT28C64X-20SC AT28C64X-20TC 32J 28P6 28S 28T Commercial (0°C to 70°C) 45 0.
PAGE 11
AT28C64(X) Packaging Information 32J, 32-lead, Plastic J-leaded Chip Carrier (PLCC) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-016 AE 28P6, 28-lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters) JEDEC STANDARD MS-011 AB .045(1.14) X 45˚ PIN NO. 1 IDENTIFY .553(14.0) .547(13.9) .595(15.1) .585(14.9) .032(.813) .026(.660) 1.47(37.3) 1.44(36.6) .025(.635) X 30˚ - 45˚ .012(.305) .008(.203) PIN 1 .530(13.5) .490(12.4) .566(14.4) .530(13.5) .021(.
PAGE 12
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