Manual

1
Features
Fast Read Access Time – 70 ns
5-volt Only Reprogramming
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (128 Bytes/sector)
Internal Address and Data Latches for 128 Bytes
Two 8K Bytes Boot Blocks with Lockout
Internal Program Control and Timer
Hardware and Software Data Protection
Fast Sector Program Cycle Time 10 ms
DATA Polling for End of Program Detection
Low Power Dissipation
50mAActiveCurrent
100 µA CMOS Standby Current
Typical Endurance > 10,000 Cycles
Single 5V ± 10% Supply
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29C010A is a 5-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 1 megabit of memory is organized as 131,072 words by
8 bits. Manufactured with Atmels advanced nonvolatile CMOS technology, the device
offers access times to 70 ns with power dissipation of just 275 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
1-Megabit
(128K x 8)
5-volt Only
Flash Memory
AT29C010A
Rev. 0394D–FLASH–05/02
Pin Configurations
Pin Name Function
A0 - A16 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
NC
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
NC
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3

Summary of content (18 pages)