Instruction Manual

1
Features
Single Voltage, Range 3V to 3.6V Supply
3-volt Only Read and Write Operation
Software Protected Programming
Fast Read Access Time - 100 ns
Low Power Dissipation
15mAActiveCurrent
40 µA CMOS Standby Current
Sector Program Operation
Single Cycle Reprogram (Erase and Program)
1024 Sectors (256 Bytes/Sector)
Internal Address and Data Latches for 256 Bytes
Two 8K Bytes Boot Blocks with Lockout
Fast Sector Program Cycle Time - 20 ms
Internal Program Control and Timer
DATA Polling for End of Program Detection
Typical Endurance > 10,000 Cycles
CMOS and TTL Compatible Inputs and Outputs
Commercial and Industrial Temperature Ranges
Description
The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read
only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 100 ns with power dissipation of just 54 mW over the commer-
cial temperature range. When the device is deselected, the CMOS standby current is
less than 40 µA. The device endurance is such that any sector can typically be written
to in excess of 10,000 times.
2-megabit
(256K x 8)
3-volt Only
Flash Memory
AT29LV020
Rev. 0565C–FLASH–05/02
PLCC Top View
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
NC No Connect
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
NC
VCC
WE
A17
TSOP Top View
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
NC
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3

Summary of content (15 pages)