Owner manual
1
Features
•
Single Supply Voltage, Range 3V to 3.6V
•
3-Volt Only Read and Write Operation
•
Software Protected Programming
•
Low Power Dissipation
– 15 mA Active Current
– 40 µA CMOS Standby Current
•
Fast Read Access Time - 150 ns
•
Sector Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Sectors (64 bytes/sector)
– Internal Address and Data Latches for 64 Bytes
•
Fast Sector Program Cycle Time - 20 ms Max.
•
Internal Program Control and Timer
•
DATA Polling for End of Program Detection
•
Typical Endurance > 10,000 Cycles
•
CMOS and TTL Compatible Inputs and Outputs
•
Commercial and Industrial Temperature Ranges
Description
The AT29LV256 is a 3-volt-only in-system Flash Programmable Erasable Read Only
Memory (PEROM). Its 256K of memory is organized as 32,768 words by 8 bits. Man-
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers
access times to 150 ns with power dissipation of just 54 mW over the commercial tem-
perature range. When the device is deselected, the CMOS standby current is less
than 40 µA. The device endurance is such that any sector can typically be written to in
excess of 10,000 times.
256K (32K x 8)
3-volt Only
Flash Memory
AT29LV256
Rev. 0563B–10/98
Pin Configurations
Pin Name Function
A0 - A14 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I
/
O7 Data Inputs/Outputs
NC No Connect
DC Don’t Connect
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
A8
A9
A11
NC
OE
A10
CE
I/O7
I/O6
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
DC
I/O3
I/O4
I/O5
A7
A12
WE
DC
VCC
A14
A13
(continued)
TSOP Top View
Type 1
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
A14
VCC
WE
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2