Manual

1
Features
Single-voltage Operation
–5V Read
5V Reprogramming
Fast Read Access Time - 55 ns
Internal Program Control and Timer
Sector Architecture
One 16K Byte Boot Block with Programming Lockout
Two 8K Byte Parameter Blocks
Two Main Memory Blocks (96K, 128K Bytes)
Fast Erase Cycle Time - 10 seconds
Byte-by-byte Programming - 10 µs/Byte Typical
Hardware Data Protection
DATA Polling for End of Program Detection
Low Power Dissipation
50 mA Active Current
100 µA CMOS Standby Current
Typical 10,000 Write Cycles
Description
The AT49F002(N)(T) is a 5-volt only in-system reprogrammable Flash memory. Its 2
megabits of memory is organized as 262,144 words by 8 bits. Manufactured with
Atmels advanced nonvolatile CMOS technology, the device offers access times to 55
ns with power dissipation of just 275 mW over the commercial temperature range.
Rev. 1017D10/99
2-megabit
(256K x 8)
5-volt Only
Flash Memory
AT49F002
AT49F002N
AT49F002T
AT49F002NT
Pin Configurations
Pin Name Function
A0 - A17 Addresses
CE
Chip Enable
OE
Output Enable
WE Write Enable
RESET
RESET
I/O0 - I/O7 Data Inputs/Outputs
DC Dont Connect
DIP Top View
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
* RESET
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A17
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
RESET *
VCC
WE
A17
(continued)
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
Type 1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
* RESET
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
*Note: This pin is a DC on the AT49F002(N)(T).

Summary of content (17 pages)