User Manual

1
4-megabit
(512K x 8)
Single 2.7-volt
Battery-Voltage
Flash Memory
AT49BV040
AT49LV040
Features
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)
Fast Read Access Time 70 ns
Internal Program Control and Timer
16K Bytes Boot Block with Lockout
Fast Chip Erase Cycle Time 10 seconds
Byte-by-byte Programming 30 µs/Byte Typical
Hardware Data Protection
Data Polling for End of Program Detection
Low Power Dissipation
25 mA Active Current
50 µA CMOS Standby Current
Typical 10,000 Write Cycles
Small Packaging
8 x 14 mm VSOP/TSOP
Description
The AT49BV/LV040 are 3-volt only, 4-megabit Flash memories organized as 524,288
words of 8-bits each. Manufactured with Atmels advanced nonvolatile CMOS technol-
ogy, the devices offer access times to 70 ns with power dissipation of just 90 mW over
the commercial temperature range. When the device is deselected, the CMOS
standby current is less than 50 µA.
The device contains a user-enabled boot block protection feature. The
AT49BV/LV040 locates the boot block at lowest order addresses (bottom boot).
Rev. 0679D03/01
Pin Configurations
Pin Name Function
A0 - A18 Addresses
CE
Chip Enable
OE
Output Enable
WE
Write Enable
I/O0 - I/O7 Data Inputs/Outputs
PLCC Top View
5
6
7
8
9
10
11
12
13
29
28
27
26
25
24
23
22
21
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
4
3
2
1
32
31
30
14
15
16
17
18
19
20
I/O1
I/O2
GND
I/O3
I/O4
I/O5
I/O6
A12
A15
A16
A18
VCC
WE
A17
VSOP Top View (8 x 14 mm) or
TSOP Top View (8 x 20 mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
21
20
19
18
17
A11
A9
A8
A13
A14
A17
WE
VCC
A18
A16
A15
A12
A7
A6
A5
A4
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
A3
(continued)

Summary of content (13 pages)